IRHG593110 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB); 抗辐射功率MOSFET直通孔（ MO- 036AB ）
| 型号： | IRHG593110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94431
IRHG597110
100V, Quad P-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
TECHNOLOGY
THRU-HOLE (MO-036AB)
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHG597110 100K Rads (Si)
IRHG593110 300K Rads (Si)
0.96Ω -0.96A
0.98Ω -0.96A
MO-036AB
Features:
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
n
Single Event Effect (SEE) Hardened
n
n
n
n
n
n
n
n
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings ( Per Die)
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-0.96
D
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-0.6
-3.84
1.4
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
0.011
±20
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
200
mJ
A
AS
I
-0.96
0.14
AR
E
AR
dv/dt
Repetitive Avalanche Energy ➀
mJ
V/ns
Peak Diode Recovery dv/dt
Operating Junction
➀
7.1
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.63 in./1.6mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/15/02
IRHG597110
Pre-Irradiation
Electrical Characteristics For Each P-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.14
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.96
V = -12V, I = -0.6A
GS D
DS(on)
➀
Ω
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
1.1
—
—
—
—
—
-4.0
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> -15V, I
= -0.6A ➀
DS
I
-10
-25
V
= -80V, V = 0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
13.4
3.7
3.0
21
V
V
= - 20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -0.96A,
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= -50V
DS
t
t
t
t
V
DD
V
= -50V, I = -0.96A,
D
17
40
= -12V, R = 7.5Ω
GS G
ns
d(off)
f
90
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
Input Capacitance
—
—
—
390
100
7.0
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-0.96
-3.84
-5.0
86
S
A
SM
V
t
V
nS
nC
T = 25°C, I = -0.96A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = -0.96A, di/dt ≤ -100A/µs
j
F
Q
Reverse Recovery Charge
240
V
≤ -25V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
90
Typical socket mount
thJA
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHG597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀➀(Per Die)
Parameter
100K Rads(Si)1 300K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
- 2.0
—
—
-4.0
-100
100
-100
- 2.0
—
—
-4.0
-100
100
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
V
= V , I = -1.0mA
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
V
= -20V
= 20 V
GSS
GS
nA
I
—
—
GSS
GS
I
—
-10
—
-10
µA
V
= -80V, V
DS
=0V
GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
➀
—
0.916
—
0.936
Ω
V
= -12V, I = -0.6A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.96
-3.5
—
—
0.98
-3.5
Ω
V
V
= -12V, I = -0.6A
D
GS
GS
V
SD
➀
V
= 0V, I = -0.96A
S
1. Part number IRHG597110
2. Part number IRHG593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
Energy Range
MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
@VGS=20V
-100
Br
I
Au
37.3
59.9
82.3
285
344
351
36.8
32.7
28.5
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-75
—
-25
—
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHG597110
Pre-Irradiation
10
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
1
1
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
-0.96A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
20µs PULSE WIDTH
DS
V
= -12V
GS
1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5.2
5.4
5.6 5.8
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHG597110
600
500
400
300
200
100
20
16
12
8
V
= 0V,
f = 1MHz
C
I
D
= -0.96A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
0
2
4
6
8
10
12
10
100
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
1ms
1
1
°
T = 25 C
J
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
1.0
1
10
100
1000
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHG597110
Pre-Irradiation
RD
1.0
0.8
0.6
0.4
0.2
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x
Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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Pre-Irradiation
IRHG597110
500
400
300
200
100
0
L
V
I
DS
D
TOP
-0.4A
-0.6A
BOTTOM-0.96A
D.U.T
R
.
G
V
DD
A
I
AS
DRIVER
VGV
-20
S
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
I
Starting T , Junction Temperature ( C)
AS
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHG597110
Footnotes:
Pre-Irradiation
➀➀ Repetitive Rating; Pulse width limited by
➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀Total Dose Irradiation with V Bias.
maximum junction temperature.
GS
applied and V = 0 during
DS
➀➀➀V
= - 25V, starting T = 25°C, L= 430mH,
J
DD
Peak I = - 0.96A, V
-12 volt V
GS
irradiation per MIL-STD-750, method 1019, condition A
=-12V
L
GS
➀➀ I
SD
≤ - 0.96A, di/dt ≤ - 290A/µs,
≤ -100V, T ≤ 150°C
J
➀➀Total Dose Irradiation with V
Bias.
DS
applied and V = 0 during
GS
V
DD
-80 volt V
DS
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — MO-036AB
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/02
8
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