IRHLG7670Z4 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB); 抗辐射的逻辑电平功率MOSFET直通孔（ MO- 036AB ）
| 型号： | IRHLG7670Z4 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) |
| 文件： | 总16页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97191B
2N7635M1
IRHLG7670Z4
60V, Combination 2N-2P-CHANNEL
TECHNOLOGY
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
Radiation Level
CHANNEL
R
I
D
DS(on)
1.07A
-0.71A
1.07A
-0.71A
0.6Ω
1.25Ω
0.6Ω
N
P
N
P
IRHLG7670Z4
100K Rads (Si)
IRHLG7630Z4
300K Rads (Si)
1.25Ω
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
Features:
n
5V CMOS and TTL Compatible
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
1.07
P-Channel
-0.71
-0.45
-2.84
1.0
Units
I @ V
= ±4.5V, T = 25°C Continuous Drain Current
D
GS
GS
C
A
I @ V
D
= ±4.5V, T =100°C Continuous Drain Current
0.67
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
4.28
DM
@ T = 25°C
P
D
1.0
W
W/°C
V
C
0.01
0.01
V
±10
±10
GS
E
Single Pulse Avalanche Energy
Avalanche Current À
13 Á
1.07
21 ²
-0.71
0.1
mJ
A
AS
I
AR
E
AR
dv/dt
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
Operating Junction
0.1
mJ
V/ns
7.0 Â
-14 ³
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/01/08
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.08
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
—
—
0.6
Ω
V
= 4.5V, I = 0.67A
DS(on)
GS D
Ã
1.0
—
0.9
—
—
-4.04
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
V
= V , I = 250µA
GS(th)
DS
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
= 10V, I
= 0.67A Ã
DS
I
Zero Gate Voltage Drain Current
V
= 48V ,V = 0V
DSS
DS
GS
—
V
= 48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
2.5
0.5
1.6
6.0
2.4
34
V
= 10V
= -10V
GSS
GSS
GS
nA
nC
V
GS
V
= 4.5V, I = 1.07A
g
gs
gd
d(on)
r
GS D
V
= 30V
DS
t
t
t
t
V
DD
V
= 30V, I = 1.07A,
= 5.0V, R = 24Ω
D
ns
GS
G
d(off)
11
—
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
162
39
2.1
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
g
—
13.8
—
Ω
f = 1.0MHz, open drain
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
1.07
4.28
1.2
51
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 1.07A, V
= 0V Ã
j
S
GS
T = 25°C, I = 1.07A, di/dt ≤ 100A/µs
j
F
V
Q
70
≤ 25V Ã
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
125 °C/W
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.08
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
—
—
1.25
Ω
V
= -4.5V, I = -0.45A
DS(on)
GS D
Ã
-1.0
—
0.9
—
—
3.07
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
V
= V , I = -250µA
GS(th)
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
= -10V, I
= -0.45A Ã
DS
V
DS
I
Zero Gate Voltage Drain Current
= -48V ,V = 0V
DSS
DS GS
—
V
= -48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
t
t
t
t
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
2.8
1.7
0.8
17
20
27
23
—
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
nC
V
= -4.5V, I = -0.71A
GS D
g
gs
gd
d(on)
r
V
= -30V
DS
V
DD
= -30V, I = -0.71A,
D
ns
V
= -5.0V, R = 24Ω
GS G
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
138
39
6.7
—
—
—
V
GS
= 0V, V
= -25V
iss
oss
rss
DS
f = 1.0MHz
pF
R
g
—
52.4
—
Ω
f = 1.0MHz, open drain
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-0.71
-2.84
-5.0
30
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -0.71A, V
= 0V Ã
j
S
GS
T = 25°C, I = -0.71A, di/dt ≤ -100A/µs
j
F
Q
11
V
≤ -25V Ã
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
125
Typical socket mount
°C/W
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
Radiation Characteristics
IRHLG7670Z4, 2N7635M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
1.0
—
—
—
—
2.0
100
-100
1.0
V
= 0V, I = 250µA
DSS
GS D
V
V
V
GS
= V , I = 250µA
GS(th)
DS
D
I
V
= 10V
GSS
GS
nA
µA
I
V
GS
= -10V
GSS
I
V
= 48V, V = 0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036)
—
0.5
Ω
V
= 4.5V, I = 0.67A
D
GS
R
DS(on)
—
—
0.6
1.2
Ω
V
GS
= 4.5V, I = 0.67A
D
V
Diode Forward Voltage
V
V = 0V, I = 1.07A
GS
D
SD
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
60
-6V
60
60
-
-7V
35
20
-
-8V
30
15
-
-10V
Br
I
37
60
84
305
370
390
39
34
30
20
-
Au
-
70
60
50
40
30
20
10
0
Br
I
Au
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
www.irf.com
Radiation Characteristics
IRHLG7670Z4, 2N7635M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-60
-1.0
—
—
—
—
V
= 0V, I = -250µA
DSS
GS D
V
V
-2.0
-100
100
-1.0
V
GS
= V , I = -250µA
GS(th)
DS
GS
D
I
V
= -10V
GSS
nA
µA
I
V
GS
= 10V
GSS
I
V
= -48V, V = 0V
GS
DSS
DS
GS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036)
—
1.20
Ω
V
= -4.5V, I = -0.45A
D
R
DS(on)
—
—
1.25
-5.0
Ω
V
= -4.5V, I = -0.45A
D
V
SD
Diode Forward Voltage
V
V
= 0V, I = -0.71A
GS
D
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
6V
-60
-60
-
7V
-50
-20
-
8V
-35
-
10V
Br
I
37
60
84
305
370
390
39
34
30
-25
-
-
Au
-
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
1
2
3
4
5
6
7
8
9 10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
N-Channel
Q1,Q3
10
10
VGS
10V
VGS
TOP
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
1
1
2.5V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= 1.07A
D
T
= 150°C
J
1
T
= 25°C
J
V
= 25V
DS
0µ
2
s PULSE WIDTH
V
= 4.5V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
4
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
6
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
N-Channel
Q1,Q3
2.5
2.0
1.5
1.0
0.5
0
0.8
0.75
0.7
I
= 1.07A
D
T
= 150°C
J
0.65
0.6
0.55
0.5
T
= 25°C
T
= 150°C
= 25°C
J
J
0.45
0.4
Vgs = 4.5V
0.35
0.3
T
J
2
3
4
5
6
7
8
9
10 11 12
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
80
70
60
50
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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7
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
N-Channel
Q1,Q3
280
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
I
= 1.07A
C
C
C
+ C , C
SHORTED
V
V
V
= 48V
D
iss
gs
gd
ds
DS
DS
DS
240
200
160
120
80
= C
= 30V
= 12V
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
6
4
2
40
C
FOR TEST CIRCUIT
SEE FIGURE 17
rss
0
0
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1.2
1.0
0.8
0.6
0.4
0.2
0
10
1
T
= 150°C
J
5°C
= 2
T
J
0.1
0.01
V
= 0V
GS
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
25
50
T
75
100
125
150
V
, Case Temperature (°C)
SD
C
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-to-Drain Diode
CaseTemperature
ForwardVoltage
8
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
N-Channel
Q1,Q3
32
28
24
20
16
12
8
10
OPERATION IN THIS AREA
I
D
LIMITED BY R (on)
DS
TOP
0.48A
0.68A
1.07A
BOTTOM
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
4
10ms
0
25
50
75
100
125
150
1
10
100
Starting T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
P
SINGLE PULSE
( THERMAL RESPONSE )
DM
0.02
t
0.01
1
1
t
2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig15. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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9
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
N-Channel
Q1,Q3
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
.
D.U.T
R
G
+
-
V
DD
I
A
AS
V
2
GS
0.01
Ω
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
4.5V
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
VDS
VGS
V
DS
90%
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
10
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
10
10
VGS
VGS
-10V
TOP
-10V
TOP
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
BOTTOM -2..0V
BOTTOM -2..0V
1
1
-2.0V
-2.0V
µ
20 s PULSE WIDTH
Tj = 25°C
µ
20 s PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
2.0
1.5
1.0
0.5
10
I
= -0.71A
D
T
= 25°C
T
J
= 150°C
J
1
V
= -25V
DS
0µ
V
= -4.5V
2
s PULSE WIDTH
GS
0.1
2
2.5
3
3.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 22. Normalized On-Resistance
Fig 21. Typical Transfer Characteristics
Vs.Temperature
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11
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
P-Channel
Q2,Q4
4.0
3.5
3.0
2.5
2.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= -0.71A
D
T
= 150°C
J
T
= 150°C
= 25°C
J
1.5
1.0
0.5
0
T
= 25°C
J
T
J
Vgs = -4.5V
2.5
2
3
4
5
6
7
8
9
10 11 12
0
0.5
1.0
1.5
2.0
3.0
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 23. Typical On-Resistance Vs
Fig 24. Typical On-Resistance Vs
GateVoltage
DrainCurrent
3.0
2.5
2.0
1.5
1.0
0.5
0.0
75
70
65
60
55
I
= -1.0mA
D
I
I
I
I
= -50µA
D
D
D
D
= -250µA
= -1.0mA
= -150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
T
, Temperature ( °C )
J
Fig 25. Typical Drain-to-Source
Fig 26. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
12
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
240
12
10
8
V
C
= 0V,
= C
f = 1 MHz
GS
V
V
V
= -48V
= -30V
= -12V
I
= -0.71A
+ C , C
SHORTED
DS
DS
DS
D
iss
gs
gd
ds
C
C
= C
200
160
120
80
rss
gd
= C + C
oss
ds
gd
C
iss
6
C
oss
4
40
2
FOR TEST CIRCUIT
SEE FIGURE 35
C
rss
0
0
1
10
100
0
1
2
3
4
5
6
-V , Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 27. Typical Capacitance
Fig 28. Typical Gate Charge Vs.
Vs.Drain-to-SourceVoltage
Gate-to-SourceVoltage
10
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T
= 150°C
J
5°C
T
=
2
J
0.1
0.01
V
GS
= 0V
3.5
0
0.5
-V
1
1.5
2
2.5
3
4
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 29. Typical Source-Drain Diode
Fig 30. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
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13
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
P-Channel
Q2,Q4
50
40
30
20
10
0
10
OPERATION IN THIS AREA
LIMITED BY R (on)
I
D
DS
TOP
BOTTOM
-0.32A
-0.45A
-0.71A
1
0.1
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
25
50
75
100
125
150
1
10
, Drain-to-Source Voltage (V)
100
Starting T , Junction Temperature (°C)
-V
J
DS
Fig 31. Maximum Safe Operating Area
Fig 32. Maximum Avalanche Energy
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
P
SINGLE PULSE
( THERMAL RESPONSE )
DM
0.02
t
0.01
1
1
t
2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig33. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
14
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
L
V
I
DS
AS
D.U.T
R
.
G
V
DD
I
A
AS
DRIVER
-20V
VGS
0.01
t
Ω
p
t
p
15V
V
(BR)DSS
Fig 34a. Unclamped Inductive Test Circuit
Fig34b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
-4.5V
.2µF
12V
.3µF
-
Q
Q
GD
GS
V
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 35b. Gate Charge Test Circuit
Fig 35a. Basic Gate Charge Waveform
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
10%
VDD
D.U.T.
RG
-
+
VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 36b. Switching Time Waveforms
Fig 36a. Switching Time Test Circuit
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15
IRHLG7670Z4, 2N7635M1
Footnotes:
Pre-Irradiation
Ä Total Dose Irradiation with V
Bias.
= 0 during
GS
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
±
10 volt V
applied and V
DS
GS
irradiation per MIL-STD-750, method 1019, condition A
Á V
= 25V, starting T = 25°C, L= 22.5mH,
J
DD
Peak I = 1.07A, V
Å Total Dose Irradiation with V
Bias.
= 10V
DS
= 0 during
L
GS
±
48 volt V
applied and V
DS
irradiation per MlL-STD-750, method 1019, condition A
² V = -25V, starting T = 25°C, L= 85mH,
GS
Â
I
SD
≤ 1.07A, di/dt ≤ 214A/µs,
≤ 60V, T ≤ 150°C
J
V
DD
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
DD
Peak I = -0.71A, V
J
GS
= -10V
L
³ I
≤ -0.71A, di/dt ≤ -164A/µs,
SD
V
≤ -60V, T ≤ 150°C
DD
J
Case Outline and Dimensions — MO-036AB
Q3
Q2
Q4
Q1
Q4
Q1
Q3
Q2
CHANNELS
N Ch.- Q1, Q3
P Ch.- Q2, Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2008
16
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