IRHLNJ77034SCV [INFINEON]
Rad hard, 60V, 22A, single, N-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL;
| 型号： | IRHLNJ77034SCV |
| 厂家： | 
Infineon |
| 描述： | Rad hard, 60V, 22A, single, N-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL |
| 文件： | 总9页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97301C
2N7606U3
IRHLNJ77034
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHLNJ77034
IRHLNJ73034
Radiation Level RDS(on)
ID
22A*
22A*
100K Rads (Si)
300K Rads (Si)
0.035Ω
0.035Ω
SMD-0.5
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
n
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@V
@V
= 4.5V,T = 25°C
Continuous Drain Current
22*
D
D
GS
GS
C
A
I
= 4.5V,T = 100°C Continuous Drain Current
20
88
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
DM
@ T = 25°C
P
57
W
W/°C
V
D
C
0.45
±10
63
V
GS
E
AS
mJ
A
I
22
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
5.7
mJ
V/ns
AR
dv/dt
8.8
T
-55 to 150
J
°C
g
T
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
STG
300 (for 5s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
02/09/15
IRHLNJ77034, 2N7606U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 250µA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.068
—
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
Ã
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.035
Ω
V
= 4.5V, I = 20A
DS(on)
GS D
1.0
—
15
—
—
-4.9
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= 10V, I
= 20A Ã
DS
DS
I
V
= 48V ,V =0V
DSS
DS GS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
34
8.0
16
26
110
54
V
= 10V
= -10V
GSS
GSS
GS
nA
V
GS
Q
Q
Q
V
= 4.5V, I = 22A
g
gs
gd
d(on)
r
GS D
nC
V
= 30V
DS
t
t
t
t
V
= 30V, I = 22A,
DD D
V = 5.0V, R = 7.5Ω
GS
G
ns
d(off)
30
—
f
L
+ L
Measured from the center of
S
D
nH
drain pad to center of source pad
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2015
488
4.5
—
—
—
V
GS
= 0V, V
= 25V
f = 1.0MHz
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
Ω
R
Gate Resistance
1.45
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
160
704
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 22A, V
= 0V Ã
j
S
GS
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
2.2
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLNJ77034, 2N7606U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Upto 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
1.0
—
—
—
—
2.0
100
-100
1.0
V
= 0V, I = 250µA
DSS
GS D
V
V
V
= V , I = 250µA
GS(th)
GS
DS
D
I
I
I
V
GS
= 10V
GSS
GSS
DSS
nA
µA
V
GS
= -10V
V
= 48V, V =0V
GS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.045
Ω
V
GS
= 4.5V, I = 20A
D
R
DS(on)
Static Drain-to-Source On-state
Resistance (SMD-0.5)
—
—
0.035
1.2
Ω
V
V
= 4.5V, I = 20A
D
GS
V
Diode Forward Voltage
V
= 0V, I = 22A
D
GS
SD
1. Part numbers IRHLNJ77034, IRHLNJ73034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-2V
@VGS=
-4V
@VGS=
-5V
@VGS=
-6V
@VGS=
-7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
60
60
60
60
60
60
60
60
60
60
60
-
60
-
-
-
-
-
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
-4
-5
-6
-7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLNJ77034, 2N7606U3
Pre-Irradiation
100
100
10
1
VGS
10V
VGS
TOP
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.30V
BOTTOM 2.30V
10
2.3V
µ
2.30V
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH, Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 22A
D
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
V
= 4.5V
GS
60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
4
4.5
5
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLNJ77034, 2N7606U3
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
I
= 22A
D
T
= 150°C
J
T = 150°C
J
T
= 25°C
J
T
= 25°C
8
J
Vgs = 4.5V
2
4
6
10
12
0
10 20 30 40 50 60 70 80
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
90
80
70
60
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHLNJ77034, 2N7606U3
Pre-Irradiation
4000
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 48V
I
= 22A
DS
DS
DS
C
C
C
+ C , C
SHORTED
D
3600
3200
2800
2400
2000
1600
1200
800
iss
gs
gd
ds
= 30V
= 12V
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
C
400
rss
0
0
1
10
100
0
5
10 15 20 25 30 35 40 45 50 55 60
Total Gate Charge (nC)
Q
V
, Drain-to-Source Voltage (V)
DS
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
35
30
25
20
15
10
5
LIMITED BY PACKAGE
T
= 150°C
J
= 25°C
T
J
1
0.1
0.01
V
GS
= 0V
1.4
0
0.2
0.4
V
0.6
0.8
1
1.2
1.6
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-to-Drain Diode
CaseTemperature
ForwardVoltage
6
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Pre-Irradiation
IRHLNJ77034, 2N7606U3
120
100
80
60
40
20
0
1000
OPERATION IN THIS AREA LIMITED
BY R (on)
I
D
DS
TOP
9.8A
13.9A
22A
100
10
1
BOTTOM
100 s
µ
1ms
10ms
Tc = 25°C
Tj = 150°C
DC
Single Pulse
0.1
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
V
DS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
10
D = 0.50
1
P
DM
0.20
0.10
t
1
t
0.05
0.02
2
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHLNJ77034, 2N7606U3
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
4.5V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLNJ77034, 2N7606U3
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ä
GS
= 0 during
10 volt V
applied and V
Á
V
= 25V, starting T = 25°C, L= 0.26mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 22A, V
J
= 10V
GS
L
Å Total Dose Irradiation with V
Bias.
Â
I
V
≤ 22A, di/dt ≤ 328A/µs,
DS
= 0 during
SD
DD
48 volt V
applied and V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2015
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9
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