IRHM7C50SEU [INFINEON]

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型号：	IRHM7C50SEU
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Provisional Data Sheet No. PD-9.1252B

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM2C50SE

IRHM7C50SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

600Volt, 0.60Ω, (SEE) RAD HARD HEXFET

Product Summary

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and

reliability in the industry.

Part Number

IRHM2C50SE

IRHM7C50SE

BVDSS

RDS(on)

600V

0.60Ω

10.4A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Ceramic Eyelets

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHM2C50SE, IRHM7C50SE Units

@ V

= 12V, T = 25°C Continuous Drain Current

10.4

@ V

= 12V, T = 100°C Continuous Drain Current

6.5

41.6

150

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

1.2

±20

Single Pulse Avalanche Energy

Avalanche Current

500

10.4

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

3.0

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

^oC

STG

300 (0.063 in (1.6 mm) from case for 10 sec)

9.3 (typical)

Weight

To Order

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Pre-Radiation

IRHM2C50SE, IRHM7C50SE Devices

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

600

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.45

V/°C

DSS

Static Drain-to-Source

—

0.60

0.65

4.5

—

= 12V, I =6.5A

DS(on)

V = 12V, I = 10.4A

Ω

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

2.5

3.0

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 6.5A

= 0.8 x Max Rating,V =0V

DSS

DS GS

µA

—

250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

100

-100

150

= 20V

GSS

= -20V

GSS

=12V, I = 10.4A

V = Max Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

= 300V, I = 10.4A,

DD D

d(on)

Rise Time

190

210

130

—

= 2.35Ω

Turn-Off Delay Time

d(off)

Fall Time

symbol show-

Measured from drain lead,

6mm (0.25 in) from package

to center of die.

Modified MOSFET

ing the internal inductances.

Internal Drain Inductance

Measured from source lead,

Internal Source Inductance

—

8.7

—

6mm (0.25 in) from package

to source bonding pad.

Input Capacitance

—

2700

300

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

oss

rss

ReverseTransfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

10.4

41.6

Modified MOSFET symbol showing the integral

reverse p-n junction rectifier.

Pulse Source Current (Body Diode)

Diode ForwardVoltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.62

T = 25°C, I = 10.4A,V

= 0V

1200 ns

16 µC

T = 25°C, I = 10.4A, di/dt ≤ 100A/µs

≤ 30V

ForwardTurn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

—

0.83

thJC

thJA

thCS

K/W ꢀ

0.21

—

Typical socket mount

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IRHM2C50SE, IRHM7C50SE Devices

Radiation Characteristics

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEXFETs of the two low dose rate test circuits that are used.

are tested to verify their hardness capability.The hard- Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 10⁵

Rads (Si) no changes in limits are specified in DC

parameters.

ness assurance program at International Rectifier uses

two radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device rated

voltage per note 7. Pre- and post-radiation limits of

the devices irradiated to 0.5 X 10⁵Rads(Si) and 1 x

10⁵Rads (Si) are identical and are presented in Table

1, column 1, IRHM2C50SE and IRHM7C50SE, re-

spectively. The values in Table 1 will be met for either

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments.Single Event

Effects characterization is shown in Table 3.

Table 1. Low Dose Rate

IRHM2C50SE 50K Rads (Si)

IRHM7C50SE 100K Rads (Si) Units

Parameter

Test Conditions

= 0V, I = 1.0mA

Min

Max

Drain-to-Source Breakdown Voltage

Gate ThresholdVoltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

600

2.5

—

4.5

DSS

GS(th)

= V , I = 1.0mA

100

-100

= 20V

GSS

—

= -20V

GSS

—

µA

=0.8 x Max Rating, V =0V

DSS

DS GS

—

0.60

Ω

V = 12V, I =6.5A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

1.62

= 25°C, I = 10.4A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Min Typ Max Min Typ Max Units

Test Conditions

Drain-to-Source Voltage

—

480

—

480

Applied drain-to-source voltage during

gamma-dot

DSS

—

6.4

—

137

6.4

—

Peak radiation induced photo-current

di/dt

2.3 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence Range

Bias

(V)

Bias

(V)

Parameter Typical

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

600

1 x 10⁵

~35

480

-5

DSS

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IRHM2C50SE, IRHM7C50SE Devices

Radiation Characteristics

Total Dose Irradiation with V

Bias.

Repetitive Rating; Pulse width limited by maximum

junction temperature. Refer to current HEXFET

reliability report.

= 0 during irradiation per

12 volt V

applied and V

MIL-STD-750, method 1019.

Total Dose Irradiation withV

Bias.

@ V

= 50V, Starting T = 25°C,

(pre-radiation) applied and

= 0.8 rated BV

DSS

= 0 during irradiation per MlL-STD-750, method 1019.

= [0.5

(

)

[BV

* DSS

/(BV

-V )]

DSS DD

Peak I = 10.4A, V

= 12V, 25 ≤ R ≤ 200Ω

This test is performed using a flash x-ray source operated

in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse.

Process characterized by independent laboratory.

All Pre-Radiation and Post-Radiation test conditions are

identical to facilitate direct comparison for circuit applications.

≤ 10.4A, di/dt ≤ 130A/µs,

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

ꢀK/W = °C/W

W/K = W/°C

Case Outline and Dimensions —TO-254AA

Conforms to JEDEC OutlineTO-254AA

Legend: 1 Drain

2 Source

3 Gate

Notes: 1. Dimensioning and tolerancing

per ANSIY14.5M-1982

2. All dimensions are shown in millimeters

(inches).

3. Optional leadforms available in either

orientation

Optional Leadforms for OutlineTO-254AA

CAUTION

BERYLLIAWARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which will

produce beryllia or beryllium dust. Furthermore, beryllium oxides

packages shall not be placed in acids that will produce fumes

containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/96

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IRHM7C50SEU [INFINEON]

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