IRHM8360UPBF [INFINEON]

Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;


型号：	IRHM8360UPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 局域网开关脉冲晶体管
文件：	总12页 (文件大小：324K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 90823A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM7360

IRHM8360

N CHANNEL

MEGA RAD HARD

Product Summary

400Volt, 0.22Ω, MEGA RAD HARD HEXFET

Part Number

IRHM7360

IRHM8360

BVDSS

400V

RDS(on)

0.22Ω

International Rectifier’s RAD HARD technology

HEXFETs demonstrate excellent threshold voltage

stability and breakdown voltage stability at total

radiaition doses as high as 1x10⁶Rads(Si). Under

identical pre- and post-irradiation test conditions, In-

ternational Rectifier’s RAD HARD HEXFETs retain

identical electrical specifications up to 1 x 10⁵Rads

(Si) total dose. No compensation in gate drive circuitry

is required. These devices are also capable of surviv-

ing transient ionization pulses as high as 1 x 10¹²Rads

(Si)/Sec, and return to normal operation within a few

microseconds. Since the RAD HARD process utilizes

International Rectifier’s patented HEXFET technology,

the user can expect the highest quality and reliability

in the industry.

22A

Features:

Radiation Hardened up to 1 x 10⁶Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy

pulse circuits in space and weapons environments.

Electrically Isolated

Ceramic Eyelets

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHM7230, IRHM8230

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

250

2.0

W/°C

±20

500

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

4.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (typical)

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10/28/98

Pre-Irradiation

IRHM7360, IRHM8360 Devices

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

400

—

= 0V, I = 1.0mA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.45

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

6.0

—

0.22

0.25

4.0

—

= 12V, I = 14A

ꢀ

DS(on)

Ω

= 12V, I = 22A

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 14A ꢀ

250

= 0.8 x Max Rating,V =0V

DSS

DS GS

µA

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

100

-100

210

120

= 20V

GSS

= -20V

= 12V, I =22A

GS D

= Max Rating x 0.5

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

= 200V, I = 22A,

DD D

Rise Time

Turn-Off Delay Time

140

= 2.35Ω

d(off)

FallTime

Measured from drain

lead, 6mm (0.25 in)

from package to center

of die.

sym-

Modified MOSFET

bol showing the internal

inductances.

Internal Drain Inductance

—

Internal Source Inductance

—

8.7

—

Measured from source

lead, 6mm (0.25 in)

from package to

source bonding pad.

Input Capacitance

—

5600

990

380

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.8

1000 ns

11 µC

T = 25°C, I = 22A, V

= 0V ꢀ

T = 25°C, I =22A, di/dt ≤ 100A/µs

≤ 50V ꢀ

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

—

0.21

—

0.5

—

thJC

thCS

thJA

°C/W

Typical socket mount

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Radiation Characteristics

IRHM7360, IRHM8360 Devices

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier

comprises three radiation environments.

Table 1, column 2, IRHM8360. The values in Table 1

will be met for either of the two low dose rate test

circuits that are used. Both pre- and post-irradiation

performance are tested and specified using the same

drive circuitry and test conditions in order to provide a

direct comparison.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MIL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of 12 volts per

note 6 and a V_DSbias condition equal to 80% of the

device rated voltage per note 7. Pre- and post- irra-

diation limits of the devices irradiated to 1 x 10⁵Rads

(Si) are identical and are presented in Table 1, col-

umn 1, IRHM7360. Post-irradiation limits of the de-

vices irradiated to 1 x 10⁶Rads (Si) are presented in

High dose rate testing may be done on a special re-

quest basis using a dose rate up to 1 x 10¹²Rads (Si)/

Sec (See Table 2).

International Rectifier radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments. Single Event Effects char-

acterization is shown in Table 3.

Table 1. Low Dose Rate

IRHM7360 IRHM8360

Parameter

100K Rads (Si) 1000K Rads (Si) Units

Test Conditions

Min Max Min

Max

Drain-to-Source Breakdown Voltage 400

—

4.0

400

1.25

—

4.5

= 0V, I = 1.0mA

GS D

DSS

Gate Threshold Voltage ꢀ

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source ꢀ

2.0

—

= V , I = 1.0mA

GS(th)

100

-100

100

-100

100

0.31

= 20V

GSS

—

= -20 V

GSS

µA

=0.8 x Max Rating, V =0V

DSS

0.22

—

= 12V, I = 14A

DS(on)1

Ω

On-State Resistance One

Diode Forward Voltage ꢀ

—

1.8

—

1.8

= 25°C, I = 22A, V = 0V

S GS

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min Typ Max Min Typ Max Units

Parameter

Test Conditions

Drain-to-Source Voltage

—

320

—

320

Applied drain-to-source voltage during

gamma-dot

DSS

—

6.4

—

137

6.4

—

Peak radiation induced photo-current

di/dt

2.3 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence

Range

(µm)

Bias

(V)

Bias

(V)

Ion

(MeV/mg/cm²)

(ions/cm²)

1x 10⁵

~41

275

-5

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Post-Irradiation

IRHM7360, IRHM8360 Devices

Fig 1. Typical Response of Gate Threshold

Fig 2. Typical Response of On-State Resistance

Voltage Vs. Total Dose Exposure

Vs. Total Dose Exposure

Fig 4. Typical Response of Drain to Source

Fig 3. Typical Response of Transconductance

Breakdown Vs. Total Dose Exposure

Vs. Total Dose Exposure

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Post-Irradiation

IRHM7360, IRHM8360 Devices

Fig 6. Typical On-State Resistance Vs.

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

NeutronFluenceLevel

Fig 8a. Gate Stress of V_GSS

Equals 12 Volts During

Radiation

Fig 7. Typical Transient Response

of Rad Hard HEXFET During

1x10¹²Rad (Si)/Sec Exposure

Fig 8b. V_DSSStress Equals

80% of B_VDSSDuring Radiation

Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

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Radiation Characterstics

IRHM7360, IRHM8360 Devices

Note: Bias Conditions during radiation:V = 12 Vdc, V = 0 Vdc

Fig 10. Typical Output Characteristics

Fig 11. Typical Output Characteristics

Pre-Irradiation

Post-Irradiation100KRads(Si)

Fig 12. Typical Output Characteristics

Fig 13. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

Post-Irradiation 1 Mega Rads(Si)

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Radiation Characterstics

IRHM7360, IRHM8360 Devices

Note: Bias Conditions during radiation:V = 0 Vdc, V = 320 Vdc

Fig 14. Typical Output Characteristics

Fig 15. Typical Output Characteristics

Pre-Irradiation

Post-Irradiation 100K Rads (Si)

Fig 16. Typical Output Characteristics

Fig 17. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

Post-Irradiation 1 Mega Rads (Si)

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Pre-Irradiation

IRHM7360, IRHM8360 Devices

Fig 18. Typical Output Characteristics

Fig 19. Typical Output Characteristics

Fig 20. Typical Transfer Characteristics

Fig 21. Normalized On-Resistance

Vs.Temperature

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Pre-Irradiation

IRHM7360, IRHM8360 Devices

Fig 23. Typical Gate Charge Vs.

Fig 22. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 25. Maximum Safe Operating

Fig 24. Typical Source-Drain Diode

Area

ForwardVoltage

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Pre-Irradiation

IRHM7360, IRHM8360 Devices

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

12V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 27a. Switching Time Test Circuit

90%

10%

Fig 26. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 27b. Switching Time Waveforms

Fig28. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

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Pre-Irradiation

IRHM7360, IRHM8360 Devices

15V

DRIVER

D S

D.U.T

D D

12V

20V

0.01

Ω

Fig 29a. Unclamped Inductive Test Circuit

(BR )D SS

Fig 29c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Same Type as D.U.T.

Fig29b. UnclampedInductiveWaveforms

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 30b. Gate Charge Test Circuit

Fig30a. Basic Gate Charge Waveform

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Pre-Irradiation

IRHM7360, IRHM8360 Devices

Total Dose Irradiation with V

Bias.

See Figures 18 through 30 for pre-radiation

12 volt V

applied and V = 0 during

curves

irradiation per MIL-STD-750, method 1019, codition A.

Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

(pre-irradiation)

= 0.8 rated BV

applied and V

DSS

= 0 during irradiation per

Refer to current HEXFET reliability report.

Starting T = 25°C,

DD = 25V,

Peak I = 22A,

MlL-STD-750, method 1019, condition A.

=2.35Ω

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ 22A, di/dt ≤ 120A/µs,

≤ BV , T ≤ 150°C

DSS J

Suggested RG = 2.35Ω

All Pre-Irradiation and Post-Irradiation test

ꢀPulse width ≤ 300 µs; Duty Cycle ≤ 2%

conditions are identical to facilitate direct

comparison for circuit applications.

Case Outline and Dimensions —TO-254AA

.12

( .005 )

13.84

13.59

(

.545

.535

)

-B-

6.60

6.32

(

.260

.249

)

3.78

3.53

(

.149

.139

)

1.27

1.02

(

.050

.040

)

-A-

20.32

20.07

(

.800

.790

)

17.40

16.89

(

.685

.665

)

13.84

13.59

(

.545

.535

)

LEG END

C OLLEC TOR

EM ITTER

G ATE

31.40

30.39

(

1.235

1.199

)

2 3

-C-

1.14

0.89

(

.045

.035

)

3.81

(

.150

)

3.81

( .150 )

.50

.25

(

.020

.010

)

NOTE S:

LEGEND

1- DRAIN

LEGEND

1- DRAIN

1. DIM ENS ION IN G

TOLER ANC IN G PER ANSI Y14.5M , 1982.

IN M ILLIM ETERS IN CH ES ).

2. ALL DIM ENSIO NS AR E SHO W

(

2- SOURCE

3- GATE

2- SOURCE

3- GATE

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and ( Inches )

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

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http://www.irf.com/

Data and specifications subject to change without notice.

10/98

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IRHM8360UPBF [INFINEON]

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