IRHM8Z60PBF [INFINEON]
Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN;
| 型号： | IRHM8Z60PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91701B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7Z60
30V, N-CHANNEL
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
IRHM7Z60
IRHM3Z60
IRHM4Z60
IRHM8Z60
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
0.014Ω 35*A
0.014Ω 35*A
0.014Ω 35*A
1000K Rads (Si) 0.014Ω 35*A
TO-254AA
Features:
International Rectifier’s RAD-Hard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
35*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
35*
140
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
25
mJ
V/ns
AR
dv/dt
0.35
-55 to 150
T
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (Typical )
For footnotes refer to the last page
*Current is limited by internal wire diameter
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1
12/20/01
IRHM7Z60
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
30
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.02
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.014
V
= 12V, I = 35A
GS D
Ω
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
21
—
—
—
—
—
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 35A ➀
DS
DS
I
25
250
V
= 24V ,V =0V
DSS
DS GS
µA
—
V
= 24V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
421
104
115
32
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 35A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 15V
DS
t
t
t
t
V
=15V, I = 35A
DD D
V =12V, R = 2.35Ω
GS
370
177
280
—
G
ns
d(off)
f
L
+ L
Total Inductance
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
7000
4800
1800
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
35*
140
1.5
220
930
S
SM
A
V
t
V
nS
µC
T = 25°C, I = 35A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
T = 25°C, I = 35A, di/dt ≤ 100A/µs
j
rr
RR
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.50
—
thJC
thCS
°C/W
R
Junction-to-Ambient
48
Typical Socket Mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM7Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads(Si)1
300 - 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
30
2.0
—
—
30
1.25
—
—
V
= 12V, I = 1.0mA
GS D
DSS
GS(th)
V
V
4.0
4.5
V
= V , I = 1.0mA
GS
DS
D
I
100
-100
25
100
-100
50
V
= 20V
GSS
GS
GS
nA
I
—
—
V
= -20 V
GSS
I
—
—
µA
V
=24V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
➀
—
0.014
—
0.035
Ω
V
= 12V, I =15A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.014
1.5
—
—
0.035
1.5
Ω
V
= 12V, I =15A
D
GS
V
➀
V
V
= 0V, I = 35A
GS S
SD
1. Part number IRHM7Z60
2. Part numbers IRHM3Z60, IRHM4Z60 and IRHM8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
(µm)
Ion
(MeV)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
36.8
59.9
305
345
39
30
25
30
25
30
20
25
15
20
10
32.8
AU
80.3
313
26.5
22.5
22.5
15
10
_
35
30
25
20
15
10
5
Br
I
AU
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7Z60
Pre-Irradiation
1000
100
10
1000
VGS
15V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM5.0V
100
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
35A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
=
15V
DS
20µs PULSE WIDTH
V
= 10V
GS
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHM7Z60
15000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
A
I = 35
D
GS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
oss
V
V
= 24V
= 15V
C
= C + C
gd
DS
DS
12000
oss
ds
C
iss
9000
6000
C
rss
3000
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
100
200
300
400
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
°
T = 150 C
J
1ms
1
10ms
°
T = 25 C
C
J
°
T = 150 C
V
= 0 V
Single Pulse
GS
5.0
0.1
0.0
1
10
100
1.0
2.0
3.0
4.0
6.0
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHM7Z60
Pre-Irradiation
RD
120
100
80
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
V
DS
20
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
0.50
0.20
0.1
0.10
0.05
0.02
P
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHM7Z60
1500
1000
500
0
I
D
TOP
16A
22A
15V
BOTTOM 35A
DRIVER
L
V
D S
D.U.T
AS
R
G
+
V
D D
-
I
A
2
VGS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
V
(BR )D SS
Starting T , Junction Temperature( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM7Z60
Pre-Irradiation
Foot Notes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 25V, starting T = 25°C, L=0.82mH
J
GS
DS
DD
Peak I = 35A, V
irradiation per MIL-STD-750, method 1019, condition A.
=12V
L
GS
➀ Total Dose Irradiation with V Bias.
➀ I
V
≤ 35A, di/dt ≤ 81A/µs,
DS
= 0 during
SD
24 volt V
applied and V
GS
≤ 30V, T ≤ 150°C
DS
DD
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
8
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