IRHM9230 [INFINEON]

TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A); 晶体管P沟道（ BVDSS = -200V ， RDS（ON） = 0.8ohm ，ID = -6.5A ）


型号：	IRHM9230
厂家：	Infineon
描述：	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) 晶体管P沟道（ BVDSS = -200V ， RDS（ON） = 0.8ohm ，ID = -6.5A ）晶体晶体管功率场效应晶体管开关局域网
文件：	总4页 (文件大小：160K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1395

IRHM9230

P-CHANNEL

REPETETIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

RAD HARD

Product Summary

-200 Volt, 0.8Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 10⁵Rads (Si). Under identical pre- and post-radia-

tion test conditions, International Rectifier’s P-Channel RAD

HARD HEXFETs retain identical electrical specifications

up to 1 x 10⁵Rads (Si) total dose. No compensation in gate

drive circuitry is required. These devices are also capable

of surviving transient ionization pulses as high as 1 x 10¹²

Rads (Si)/Sec, and return to normal operation within a few

microseconds. Single Event Effect (SEE) testing of Inter-

national Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE failure. Since the

P-Channel RAD HARD process utilizes International

Rectifier’s patented HEXFET technology, the user can ex-

pect the highest quality and reliability in the industry.

Part Number

IRHM9230

BV_DSS

-200V

R_DS(on)

I_D

0.8Ω

-6.5A

Features:

■ Radiation Hardened up to 1 x 10⁵Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

P-Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control,very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

■ Simple Drive Requirements

■ Ease of Paralleling

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high-energy pulse circuits in space and weap-

ons environments.

■ Hermetically Sealed

■ Ceramic Eyelets

■ Electrically Isolated

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHM9230

-6.5

Units

@ V

= -12V, T = 25°C Continuous Drain Current

GS C

= -12V, T = 100°C Continuous Drain Current

-4.1

Pulsed Drain Current

-26

@ T = 25°C

Max. Power Dissipation

W/K ꢀ

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy

Avalanche Current

330

-6.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

7.5

dv/dt

-5.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. (1 .6mm) from case for 10s)

9.3 (typical)

Notes: See page 4

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IRHM9230 Device

Pre-Radiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

-200

—

= 0V, I = -1.0 mA

DSS

V/°C Reference to 25°C, I = -1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

-0.10

DSS

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

-2.0

2.2

—

0.8

0.92

-4.0

—

= -12V, I = -4.1A

DS(on)

Ω

= -12V, I = -6.5A

= V , I = -1.0 mA

GS(th)

Ω

S (

)

> -15V, I

= -6.5A

-25

-250

= 0.8 x Max. Rating,V = 0V

DSS

µA

—

= 0.8 x Max. Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

5.0

-100

100

= -20V

= 20V

GSS

= -12V, I = -6.5A

GS D

= Max. Rating x 0.5

= -100V, I = -6.5A, R = 2.35Ω

d(on)

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

—

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

Internal Source Inductance

—

to source bonding pad.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

1100

310

—

= 0V, V

f = 1.0 MHz

= -25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current

(Body Diode)

Pulse Source Current

(Body Diode) ➀

—

-6.5

-26

Modified MOSFET symbol

showing the integral Reverse

p-n junction rectifier.

Diode ForwardVoltage

Reverse Recovery Time

Reverse Recovery Charge

ForwardTurn-OnTime

—

-5.0

400

3.0

µC

T = 25°C, I = -6.5A, V

= 0V

T = 25°C, I = -6.5A, di/dt ≤ -100 A/µs

≤ -50V

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

—

1.67

—

thJC

thJA

K/W ꢀ

Notes: See page 4

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IRHM9230 Device

Radiation Characteristics

Radiation Performance of P-Channel Rad

Hard HEXFETs

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 10⁵

Rads (Si), no change in limits are specified in DC

parameters.

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability. The

hardness assurance program at International Rectifier

uses two radiation environments.

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test method

1019. International Rectifier has imposed a standard

International Rectifier radiation hardened P-Channel

HEXFETs are considered to be neutron-tolerant, as stated

in MIL-PRF-19500 Group D. International Rectifier P-

Channel radiation hardened HEXFETs have been

characterized in heavy ion Single Event Effects

gate voltage of -12 volts per note 6 and a V

bias

DSS

condition equal to 80% of the device rated voltage per

note 7. Pre- and post-radiation limits of the devices

irradiated to 1 x 10⁵Rads (Si) are identical and are

presented in Table 1.The values inTable 1 will be met

for either of the two low dose rate test circuits that are

used.

environment and the results are shown in Table 3.

Table 1. Low Dose Rate

IRHM9230

100K Rads (Si)

min. max.

Parameter

Units

Test Conditions

Drain-to-Source Breakdown Voltage -200

—

-4.0

-100

100

-25

= 0V, I = -1.0 mA

GS D

= V , I = -1.0 mA

DSS

GS(th)

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

-2.0

—

= -20V

GSS

= 20V

GSS

—

µA

Ω

= 0.8 x Max Rating, V

= 0V

DSS

—

0.8

= -12V, I = -4.1A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

-5.0

= 25°C, I = -6.5A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec10¹²Rads (Si)/sec

Min. Typ Max. Min.Typ. Max.

Parameter

Units

Test Conditions

DSS

Drain-to-Source Voltage

—

-160

—

-160

Applied drain-to-source voltage

during gamma-dot

—

-100

-800

—

-100

-160

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence Range

Bias

(V)

-200

Bias

(V)

Parameter

Typ.

-200

Units

Ion (MeV/mg/cm²) (ions/cm²) (µm)

1 x 10⁵

~41

DSS

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IRHM9230 Device

Radiation Characteristics

Repetitive Rating; Pulse width limited by

maximum junction temperature.

Total Dose Irradiation with V

Bias.

= 0 during

-12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

@ V

= -50V, Starting TJ = 25°C,

Total Dose Irradiation withV

Bias.

(pre-radiation)

= [0.5 * L * (I ²) * [B

/(B

-V )]

VDSS VDSS DD

= 0.8 rated B

VDSS

Peak I = -6.5A, V

= -12V, 25 ≤ R ≤ 200 Ω

applied and V

MlL-STD-750, method 1019.

= 0 during irradiation per

≤ -6.5A, di/dt ≤ -140 A/µs,

≤ B

, T ≤ 150°C

VDSS

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

Suggested R = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Process characterized by independent laboratory.

ꢀK/W = °C/W

W/K = W/°C

All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

Case Outline and Dimensions

Optional leadforms for outline TO-254

LEGEND

1 DRAIN

2 SOURCE

3 GATE

LEGEND

NOTES:

1 DRAIN

1 DIMENSIONING AND TOLERANCING PER

2 SOURCE

ANSI Y14.5M-1982

3 GATE

2 ALL DIMENSIONS ARE SHOWN IN

MILLIMETERS (INCHES)

3 LEADFORM IS AVAILABLE IN EITHER

ORIENTATION:

NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982

2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

Example: 3.1 IRHM7160D

3.2 IRHM7160U

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and (Inches)

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium oxide

packages shall not be placed in acids that will produce fumes

containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: 171 (K&H Bldg.),30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

4/96

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IRHM9230 [INFINEON]

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