IRHMS57264SEPBF [INFINEON]
Power Field-Effect Transistor, 37A I(D), 250V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3;
| 型号： | IRHMS57264SEPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 37A I(D), 250V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-95871
IRHMS57264SE
JANSR2N7477T1
250V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
REF: MIL5-PRF-19500/685
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHMS57264SE 100K Rads (Si)
0.061Ω 37A JANSR2N7477T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
of low R
and low gate charge reduces the
DS(on)
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
37
23.5
148
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
208
W
W/°C
V
D
C
1.67
±20
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
258
mJ
A
AS
I
37
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
20.8
14
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
For footnotes refer to the last page
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1
11/01/04
IRHMS57264SE, JANSR2N7477T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
250
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.29
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.061
Ω
V
= 12V, I = 23.5A
GS D
Ã
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
27
—
—
—
—
—
4.5
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS
GS(th)
fs
DS
= 15V, I
D
Ω
V
= 23.5A Ã
DS
DS
I
V
= 200V ,V =0V
DSS
DS
GS
= 200V,
µA
—
V
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
165
45
75
35
125
80
65
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
V
=12V, I = 37A
g
gs
gd
d(on)
r
GS
D
V
DS
= 125V
t
t
t
t
V
DD
= 125V, I = 37A
=12V, R = 2.35Ω
GS G
D
V
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
5410
770
36
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
1.2
Ω
f = 1.0MHz, open drain
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
37
148
1.2
560
8.2
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 37A, V
= 0V Ã
j
S
GS
T = 25°C, I = 37A, di/dt ≤100A/µs
j
F
V
DD
≤ 50V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
thJC
thCS
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHMS57264SE, JANSR2N777T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
250
2.0
—
—
—
—
4.5
100
-100
10
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
V
GS
= 20V
GSS
nA
µA
I
V
= -20V
GS
GSS
I
V
= 200V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.061
Ω
V
GS
= 12V, I = 23.5A
D
R
DS(on)
Static Drain-to-Source On-state
Resistance (Low-Ohmic TO-254)
—
—
0.061
1.2
Ω
V
= 12V, I = 23.5A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 37A
D
GS
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
250
250
250
250
250
250
250
250
225
250
250
175
250
240
80
59.8
82.3
300
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS57264SE, JANSR2N7477T1
Pre-Irradiation
1000
1000
100
10
VGS
15V
12V
VGS
TOP
TOP
15V
12V
10V
9.0V
7.0V
6.0V
5.5V
10V
100
10
9.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
1
5.0V
5.5V
60 s PULSE WIDTH Tj = 25°C
1
0.1
0.01
µ
µ
60 s PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 37A
D
T
= 150°C
J
T
= 25°C
J
1
0.1
0.01
V
= 50V
DS
0µ
V
= 12V
GS
6
s PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHMS57264SE, JANSR2N777T1
10000
20
16
12
8
V
C
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 200V
= 125V
= 50V
+ C , C
SHORTED
DS
DS
DS
I
= 37A
iss
gs
gd
ds
D
C
= C
rss
gd
8000
C
= C + C
oss
ds
gd
6000
C
iss
C
oss
4000
2000
0
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
Q
80
120
160
200
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G,
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°C
T
= 150°C
= 25
100µs
T
J
J
1ms
1
1
10ms
Tc = 25°C
Tj = 150°C
V
= 0V
GS
Single Pulse
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHMS57264SE, JANSR2N7477T1
Pre-Irradiation
RD
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
P
DM
t
1
SINGLE PULSE
t
( THERMAL RESPONSE )
2
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS57264SE, JANSR2N777T1
500
400
300
200
100
0
I
D
15V
TOP
16.5A
23.4A
BOTTOM 37A
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
V
2
GS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHMS57264SE, JANSR2N7477T1
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 0.38mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = 37A, V
GS
=12V
L
Å Total Dose Irradiation with V
Bias.
Â
I
V
≤ 37A, di/dt ≤ 1040A/µs,
DS
applied and V = 0 during
GS
SD
DD
200 volt V
≤ 250V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — Low-Ohmic TO-254AA
0.12 [.005]
13.84 [.545]
6.60 [.260]
3.78 [.149]
3.53 [.139]
13.59 [.535]
6.32 [.249]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/2004
8
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