IRHMS597160 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA); 抗辐射功率MOSFET直通孔（低电阻TO- 254AA ）
| 型号： | IRHMS597160 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 文件： | 总8页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD - 94283B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160
100V, P-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHMS597160 100K Rads (Si)
IRHMS593160 300K Rads (Si)
0.05Ω -45A*
0.05Ω -45A*
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
High Electrical Conductive Package
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-45*
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-30
-180
208
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
W
W/°C
V
D
C
1.67
V
±20
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
480
mJ
A
AS
I
-45
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
20.8
mJ
V/ns
AR
dv/dt
-6.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
9.3 ( Typical )
* Current is limited by package
For footnotes refer to the last page
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1
07/20/04
IRHMS597160
Pre-Irradiation
Electrical Characteristics@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.13
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.05
Ω
V = -12V, I = -30A
GS D
Ã
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
24
—
—
—
—
—
-4.0
—
-10
-25
V
S ( )
V
V
V
= V , I = -1.0mA
GS(th)
fs
DS
DS
GS
D
Ω
> -15V, I
= -30A Ã
DS
I
= -80V ,V =0V
DSS
DS GS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
170
65
30
35
140
70
45
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-12V, I = -45A
g
gs
gd
d(on)
r
GS D
V
= -50V
DS
t
t
t
t
V
DD
V
= -50V, I = -45A
D
=-12V, R = 1.2Ω
GS G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6110
1574
115
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-45*
-180
-5.0
200
1.6
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = -45A, V
= 0V Ã
j
S
GS
T = 25°C, I =-45A, di/dt ≤ -100A/µs
j
F
V
≤ -25V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.6
—
48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHMS597160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-100
-2.0
—
—
—
—
-100
-2.0
—
—
—
—
-5.0
-100
100
-10
V
= 0V, I = -1.0mA
DSS
GS D
V
V
-4.0
-100
100
-10
V
= V , I = -1.0mA
GS
GS(th)
DS
D
I
I
V
= -20V
= 20 V
GSS
GS
V
GS
nA
GSS
I
µA
V
= -80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
Ã
—
0.05
—
0.05
Ω
V
GS
= -12V, I = -30A
D
On-State Resistance (TO-3)
R
Static Drain-to-Source On-State
—
—
0.05
-5.0
—
—
0.05
-5.0
Ω
V
= -12V, I = -30A
D
Ã
GS
DS(on)
Resistance(Low-OhmicTO-254AA)
Diode Forward Voltage
V
SD
Ã
V
V
= 0V, I = -45A
GS S
1. Part number IRHMS597160
2. Part number IRHMS593160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.9
Energy
(MeV)
252.6
314
Range
@VGS=20V
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
Br
I
Au
33.1
30.5
28.4
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-75
—
-100
-25
59.7
82.3
350
—
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS597160
Pre-Irradiation
1000
1000
100
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM-5.0V
BOTTOM-5.0V
100
10
1
-5.0V
-5.0V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
-45A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
V
=-12V
20µs PULSE WIDTH
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
5.5
6.0
6.5 7.0
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHMS597160
20
16
12
8
10000
I
D
= -45A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C
gd
rss
C
= C + C
8000
6000
4000
2000
0
oss
ds
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
40
80
120
160
200
240
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100
10
1
100µs
°
T = 25 C
J
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.0
1.5
3.0
4.5
6.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHMS597160
Pre-Irradiation
RD
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
t
t
f
d(on)
r
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
(THERMAL RESPONSE)
0.01
P
2
DM
0.01
0.001
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS597160
L
1000
800
600
400
200
0
V
DS
I
D
TOP
-20A
-28.5A
BOTTOM -45A
-
D.U.T
R
G
V
DD
A
+
I
AS
DRIVER
V
-
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHMS597160
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
Á
V
= -25V, starting T = 25°C, L=0.48 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -45A, V
= -12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
SD
≤ -45A, di/dt ≤ -365A/µs,
DS
applied and V = 0 during
GS
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
DD
J
Case Outline and Dimensions — Low-Omic TO-254AA
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLINGDIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TOJEDECOUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2004
8
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