IRHMS6S7260 [INFINEON]
Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,;
| 型号： | IRHMS6S7260 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97859
IRHMS6S7260
200V, N-CHANNEL
RADIATION HARDENED
TECHNOLOGY
POWER MOSFET
THRU-HOLE (LOW OHMIC - TO-254AA)
R
6
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHMS6S7260 100 kRads(Si)
45A*
45A*
0.029
0.029
IRHMS6S3260
300 kRads(Si)
Description
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
IR HiRel R6 S-line technology provides high performance
power MOSFETs for space applications. These devices
have been characterized for both Total Dose and Single
Event Effect (SEE) with useful performance up to LET of
60 (MeV/(mg/cm2). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
45*
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
35
A
180
208
1.67
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
344
VGS
EAS
IAR
mJ
A
45
20.8
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
5.4
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
Weight
*Current is limited by package
For footnotes refer to the page 2.
1
2017-01-30
IRHMS6S7260
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
V/°C Reference to 25°C, ID = 1.0mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200 ––– –––
––– 0.21 –––
––– ––– 0.029
V
BVDSS/TJ
RDS(on)
VGS = 12V, ID = 35A
VGS(th)
2.0
–––
4.0
V
VDS = VGS, ID = 1.0mA
Gate Threshold Voltage Coefficient
Forward Transconductance
––– -11.2 ––– mV/°C
VGS(th)/TJ
gfs
IDSS
40
––– –––
S
V
DS = 15V, ID = 35A
VDS = 160V, VGS = 0V
DS = 160V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
ID = 45A
nC VDS = 100V
GS = 12V
––– –––
––– –––
––– ––– 100
––– ––– -100
––– ––– 240
10
25
Zero Gate Voltage Drain Current
µA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
nA
V
QG
QGS
QGD
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
65
60
40
60
73
30
V
VDD = 100V
ID = 45A
ns
td(off)
tf
RG = 2.35
VGS = 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internally
bonded from Source pin to Drain pad
Ls +LD
Total Inductance
–––
6.8
–––
nH
Ciss
Coss
Crss
RG
Input Capacitance
––– 8045 –––
––– 953 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
–––
–––
14
–––
–––
1.1
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– ––– 45*
––– ––– 180
A
ISM
VSD
trr
Qrr
ton
––– –––
1.2
V
TJ = 25°C,IS = 45A, VGS = 0V
TJ = 25°C ,IF = 45A, VDD 25V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 640
––– ––– 10.5
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ns
µC
* Current is limited by package
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
Case -to-Sink
Junction-to-Ambient (Typical Socket Mount)
–––
–––
0.60
RJC
RCS
RJA
–––
–––
0.21
–––
–––
48
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L =0.34mH, Peak IL = 45A, VGS = 12V
ISD 45A, di/dt 840A/µs, VDD 200V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2017-01-30
IRHMS6S7260
Pre-Irradiation
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total
ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and
specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Up to 300 kRads(Si) 1
Parameter
Units
Test Conditions
Min.
200
2.0
Max.
–––
4.0
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
–––
–––
–––
100
-100
10
nA VGS = 20V
IGSS
nA VGS = -20V
IDSS
Zero Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance (TO-3)
Static Drain-to-Source On--State
Resistance (Low Ohmic TO-254AA)
Diode Forward Voltage
µA VDS = 160V, VGS = 0V
RDS(on)
–––
0.029
V
GS = 12V, ID = 35A
GS = 12V, ID = 35A
RDS(on)
VSD
–––
–––
0.029
1.2
V
V
VGS = 0V, ID = 45A
1. Part numbers IRHMS6S7260 and IRHMS6S3260
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@ VGS = 0V @ VGS = -5V @ VGS = -10V @ VGS = -15V
49.2 ± 5%
58.4 ± 5%
719 ± 5%
876 ± 5%
64.2 ± 5%
200
180
200
180
200
180
200
–––
69.7 ± 7.5%
250
200
150
100
50
LET = 49.2 ± 5%
LET = 58.4 ± 5%
0
0
-5
-10
Bias VGS (V)
-15
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the page 2.
3
2017-01-30
IRHMS6S7260
Pre-Irradiation
1000
100
10
1000
100
10
V
GS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
60 s PULSE WIDTH
Tj = 150°C
60s PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
45A
=
I
D
T
= 150°C
J
T
= 25°C
= 50V
J
V
DS
6s PULSE WIDTH
V
= 12V
GS
5
5.5
6
6.5
7
7.5
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature
( C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4. Normalized On-Resistance Vs.
Fig 3. Typical Transfer Characteristics
Temperature
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
I
= 45A
D
T
= 150°C
= 25°C
J
T
= 150°C
J
T
J
T
= 25°C
J
V
= 12V
GS
4
8
12
16
20
0
20 40 60 80 100 120 140 160 180 200
, Drain Current (A)
I
V
Gate -to -Source Voltage (V)
D
GS,
Fig 6. Typical On-Resistance Vs Drain Current
2017-01-30
Fig 5. Typical On-Resistance Vs Gate Voltage
4
IRHMS6S7260
Pre-Irradiation
250
240
230
220
210
200
190
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
14000
12000
10000
8000
6000
4000
2000
0
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
iss
gs
gd ,
gd
ds
C
= C
gd
rss
C
= C + C
ds
oss
C
iss
C
oss
C
rss
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
60
LIMITED BY PACKAGE
50
40
30
20
10
0
T
= 150°C
J
5°C
= 2
T
J
1
V
= 0V
GS
0.1
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
°
( C)
T , Case Temperature
C
V
, Source-to-Drain Voltage (V)
SD
Fig 12. Maximum Drain Current Vs.Case Temperature
Fig 11. Typical Source-Drain Diode Forward Voltage
5
2017-01-30
IRHMS6S7260
Pre-Irradiation
1000
100
10
700
600
500
400
300
200
100
0
I
OPERATION IN THIS AREA LIMITED
BY RDS(on)
D
TOP
20A
28.5A
BOTTOM 45A
100s
1ms
1
10ms
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
°
( C)
Starting T , Junction Temperature
J
V
, Drain-to-Source Voltage (V)
DS
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. Drain Current
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z + T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
2017-01-30
IRHMS6S7260
Pre-Irradiation
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Gate Charge Test Circuit
Fig 17a. Gate Charge Waveform
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
7
2017-01-30
IRHMS6S7260
Pre-Irradiation
Case Outline and Dimensions - Low Ohmic - TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change without notice.
8
2017-01-30
IRHMS6S7260
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
9
2017-01-30
相关型号：
IRHMS6S7260SCS
Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL
INFINEON
IRHN3054PBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3130
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3230
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3250
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3250PBF
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明