IRHMS6S7160SCS [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRHMS6S7160SCS |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：702K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97867A
IRHMS6S7160
100V, N-CHANNEL
RADIATION HARDENED
TECHNOLOGY
POWER MOSFET
THRU-HOLE (LOW OHMIC - TO-254AA)
R
6
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHMS6S7160 100 kRads(Si)
45A*
45A*
0.011
0.011
IRHMS6S3160
300 kRads(Si)
TO-254AA
Low Ohmic
Description
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
ESD Rating: Class 3A per MIL-STD-750, Method 1020
IRHMS6S7160 is a part of the International Rectifier HiRel
family of products. IR HiRel R6 S-line technology provides
high performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 60 (MeV/(mg/cm2). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Symbol
Value
Units
45*
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
45*
180
208
1.67
A
IDM @ TC = 25°C
W
W/°C
V
PD @ TC = 25°C
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
512
VGS
EAS
IAR
mJ
A
45
20.8
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
EAR
dv/dt
TJ
6.3
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
Weight
* Current is limited by package
For footnotes refer to the page 2.
1
2018-07-05
International Rectifier HiRel Products, Inc.
IRHMS6S7160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
100 ––– –––
––– 0.12 –––
V
BVDSS/TJ
V/°C
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS = 12V, ID = 45A
––– ––– 0.011
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 1.0mA
VGS(th)/TJ
gfs
Gate Threshold Voltage Coefficient
Forward Transconductance
––– -10.6 ––– mV/°C
45
VDS = 15V, ID = 45A
––– –––
S
IDSS
V
DS = 80V, VGS = 0V
––– –––
––– –––
10
25
Zero Gate Voltage Drain Current
µA
VDS = 80V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
VGS = 20V
GS = -20V
ID = 45A
––– ––– 100
––– ––– -100
––– ––– 170
nA
nC
V
QG
QGS
QGD
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 50V
––– –––
––– –––
––– –––
60
80
40
VGS = 12V
VDD = 50V
ID = 45A
––– ––– 125
ns
td(off)
tf
––– –––
––– –––
85
30
RG = 2.35
VGS = 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internal-
ly bonded from Source pin to Drain pad
Ls +LD
Total Inductance
–––
6.8
–––
nH
Ciss
Coss
Crss
RG
Input Capacitance
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
––– 8877 –––
––– 1600 –––
––– 20.5 –––
––– 1.05 –––
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– 45*
––– ––– 180
A
ISM
VSD
trr
Qrr
ton
––– –––
––– ––– 500
––– ––– 6.4
1.2
V
TJ = 25°C,IS = 45A, VGS = 0V
TJ = 25°C ,IF = 45A, VDD 25V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Current is limited by package
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
Case -to-Sink
Junction-to-Ambient (Typical Socket Mount)
RJC
RCS
RJA
–––
–––
–––
–––
0.21
–––
0.60
–––
48
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L =0.51mH, Peak IL = 45A, VGS = 12V
ISD 45A, di/dt 650A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2018-07-05
International Rectifier HiRel Products, Inc.
IRHMS6S7160
Pre-Irradiation
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total
ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and
specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Up to 300 kRads(Si) 1
Symbol
BVDSS
VGS(th)
IGSS
Parameter
Units
Test Conditions
Min.
100
2.0
Max.
–––
4.0
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
VGS = 20V
V
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
–––
–––
–––
100
-100
10
nA
nA
µA
IGSS
VGS = -20V
IDSS
Zero Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance (TO-3)
Static Drain-to-Source On--State
Resistance (Low Ohmic TO-254AA)
Diode Forward Voltage
VDS = 80V, VGS = 0V
RDS(on)
V
GS = 12V, ID = 45A
GS = 12V, ID = 45A
–––
0.011
RDS(on)
VSD
V
–––
–––
0.011
1.2
VGS = 0V, ID = 45A
V
1. Part numbers IRHMS6S7160 and IRHMS6S3160
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
(MeV/(mg/cm2))
0V
-5V
-10V
-15V
-17V
-19V
-20V
37.7
60.5
380
697
46
100
100
100
100
100
100
100
30
100
–––
100
–––
40
56.7
–––
120
100
80
60
40
20
0
LET = 37.7
LET = 60.5
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the page 2.
3
2018-07-05
International Rectifier HiRel Products, Inc.
IRHMS6S7160
Pre-Irradiation
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
45A
=
I
D
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
2s PULSE WIDTH
V
=12V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
5.5
6
6.5
7
7.5
8
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs.
Fig 3. Typical Transfer Characteristics
Temperature
30
25
20
15
10
5
40
35
30
25
20
15
10
5
I
= 45A
D
T
= 150°C
= 25°C
J
T
= 150°C
= 25°C
J
T
J
T
J
V
= 12V
GS
0
0
4
8
12
16
20
24
0
20 40 60 80 100 120 140 160 180 200
, Drain Current (A)
I
V
Gate -to -Source Voltage (V)
GS,
D
Fig 6. Typical On-Resistance Vs Drain Current
Fig 5. Typical On-Resistance Vs Gate Voltage
International Rectifier HiRel Products, Inc.
4
2018-07-05
IRHMS6S7160
Pre-Irradiation
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
140
130
120
110
100
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 8. Typical Threshold Voltage Vs
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Temperature
20
14000
12000
10000
8000
6000
4000
2000
0
I
D
= 45A
V
V
V
= 80V
= 50V
= 20V
V
= 0V,
f = 1MHz
gd , ds
GS
DS
DS
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
ds
16
12
8
oss
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
1
10
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
T
= 150°C
J
5°C
= 2
T
J
V
GS
= 0V
1.4
1.0
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
, Source-to-Drain Voltage (V)
SD
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs.Case Temperature
2018-07-05
5
International Rectifier HiRel Products, Inc.
IRHMS6S7160
Pre-Irradiation
1200
1000
800
600
400
200
0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
I
D
DS
TOP
20A
28.5A
45A
BOTTOM
100 s
1ms
10ms
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
Starting T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. Drain Current
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
0.02
0.01
t
1
0.01
t
2
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
2018-07-05
International Rectifier HiRel Products, Inc.
IRHMS6S7160
Pre-Irradiation
V
(BR)DSS
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Gate Charge Test Circuit
Fig 17a. Gate Charge Waveform
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
7
2018-07-05
International Rectifier HiRel Products, Inc.
IRHMS6S7160
Pre-Irradiation
Case Outline and Dimensions - Low Ohmic - TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
www.infineon.com/irhirel
101 N. Sepulveda Boulevard, El Segundo, California 90245, USA Tel: +1 (310) 252-7105
2520 Junction Avenue, San Jose, California 95134, USA Tel: +1 (408) 434-5000
205 Crawford Street, Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
Data and specifications subject to change without notice.
8
2018-07-05
International Rectifier HiRel Products, Inc.
IRHMS6S7160
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
9
2018-07-05
International Rectifier HiRel Products, Inc.
相关型号：
IRHMS6S7260
Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
INFINEON
IRHMS6S7260SCS
Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL
INFINEON
IRHN3054PBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3130
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3230
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
IRHN3250
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明