IRHN2C50SE [INFINEON]

TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A); 晶体管N沟道（ BVDSS = 600V ， RDS（ON） = 0.60ohm ，ID = 10.4A ）


型号：	IRHN2C50SE
厂家：	Infineon
描述：	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) 晶体管N沟道（ BVDSS = 600V ， RDS（ON） = 0.60ohm ，ID = 10.4A ）晶体晶体管
文件：	总4页 (文件大小：87K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1476A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHN2C50SE

IRHN7C50SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

Part Number

600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET

BVDSS

RDS(on)

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the SEE pro-

IRHN2C50SE

600V

0.60Ω

10.4A

IRHN7C50SE

Features:

■ Radiation Hardened up to 1 x 10⁵Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

cess utilizes International Rectifier’s patented HEXFET ■ Gamma Dot (Flash X-Ray) Hardened

technology, the user can expect the highest quality

■ Neutron Tolerant

and reliability in the industry.

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-Weight

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHN2C50SE, IRHN7C50SE Units

@ V

= 12V, T = 25°C Continuous Drain Current

10.4

@ V

= 12V, T = 100°C Continuous Drain Current

6.5

41.6

150

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/K ➄

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

500

10.4

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

3.0

V/ns

-55 to 150

Storage Temperature Range

STG

^oC

(for 5 seconds)

2.6 (typical)

Package Mounting Surface Temperature

Weight

300

To Order

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Pre-Radiation

IRHN2C50SE, IRHN7C50SE Devices

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

600

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.45

DSS

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.5

3.0

—

0.60

0.65

4.5

—

250

= 12V, I = 6.5A

DS(on)

V = 12V, I = 10.4A

➃

Ω

S ( )

= V , I = 1.0 mA

GS(th)

Ω

> 15V, I

= 6.5A ➃

= 0.8 x Max Rating,V

DS GS

= 0V

DSS

µA

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

2.0

100

-100

150

190

210

130

—

= 20V

= -20V

GSS

=12V, I = 10.4A

= Max. Rating x 0.5

= 300V, I = 10.4A,

d(on)

DD D

R = 2.35Ω

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

6.5

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

2700

300

—

= 0V, V

= 25V

f = 1.0 MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

10.4

41.6

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.62

1200 ns

16 µC

T = 25°C, I = 10.4A, V

= 0V ➃

T = 25°C, I = 10.4A, di/dt ≤ 100A/µs

≤ 50V ➃

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

0.83

thJC

K/W➄

Junction-to-PC board

—

TBD

—

soldered to a copper-clad PC board

thJ-PCB

To Order

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IRHN2C50SE, IRHN7C50SE Devices

Radiation Characteristics

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-

FETs are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 10⁵

Rads (Si), no change in limits are specified in DC

parameters.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 0.5 x 10⁵Rads (Si)

and 1 x 10⁵Rads (Si) are identical and are pre-

sented in Table 1, column 1, IRHN2C50SE and

IRHN7C50SE, respectively. The values in Table 1

will be met for either of the two low dose rate test

circuits that are used.

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 1. Low Dose Rate ➅ ➆

IRHN2C50SE 50K Rads (Si)

IRHN7C50SE 100K Rads (Si) Units

Parameter

Test Conditions ➉

Min.

600

2.0

—

Max.

—

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage ➃

= 0V, I = 1.0 mA

GS D

DSS

4.5

= V , I = 1.0 mA

GS(th)

GSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source ➃

100

-100

= 20V

—

= -20V

GSS

—

µA

= 0.8 x Max Rating, V = 0V

DS GS

DSS

—

0.60

Ω

= 12V, I = 6.5A

DS(on)1

On-State Resistance One

Diode Forward Voltage ➃

—

1.62

= 25°C, I = 10.4A, V

= 0V

Table 2. High Dose Rate ➇

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Drain-to-Source Voltage

Min. Typ Max. Min. Typ. Max. Units

Test Conditions

Applied drain-to-source voltage

during gamma-dot

—

480

—

480

DSS

—

6.4

—

137

6.4

—

Peak radiation induced photo-current

di/dt

2.3 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects ➈

LET (Si)

Fluence Range

Bias

(V)

480

Bias

(V)

-5

Parameter

Typ.

600

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

1 x 10⁵

~35

DSS

To Order

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IRHN2C50SE, IRHN7C50SE Devices

Radiation Characteristics

➅ Total Dose Irradiation with V

Bias.

= 0 during

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

➆ Total Dose Irradiation with V Bias.

➁ @ V

= 50V, Starting T = 25°C,

(pre-radiation)

= [0.5

= 0.8 rated BV

(I ) [BV

/(BV

DSS

-V )]

DSS DD

applied and V

DSS

= 0 during irradiation per

Peak I = 10.4A, V

= 12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

➂ I

≤ 10.4A, di/dt ≤ 130A/µs,

➇ This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➈ Process characterized by independent laboratory.

➄ K/W = °C/W

➉ All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions — SMD-1

Notes:

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982

2. Controlling Dimension: Inch

3. Dimensions are shown in millimeters (Inches)

Dimension includes metallization flash

Dimension does not include metallization flash

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

10/96

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IRHN2C50SE [INFINEON]

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