IRHNA597064SCSD [INFINEON]
Power Field-Effect Transistor,;型号: | IRHNA597064SCSD |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, |
文件: | 总8页 (文件大小:382K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-94604D
IRHNA597064
JANSR2N7524U2
60V, P-CHANNEL
REF: MIL-PRF-19500/733
RADIATION HARDENED
POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (SMD-2)
R
5
Product Summary
Part Number
IRHNA597064
IRHNA593064
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7524U2
JANSF2N7524U2
100 kRads(Si)
300 kRads(Si)
-56A
-56A
0.016
0.016
Description
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
IR HiRel R5 technology provides high performance
power MOSFETs for space applications. These devices
have been characterized for both Total Dose and Single
Event Effect (SEE) with useful performance up to LET of
80 (MeV/(mg/cm2). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers.
These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
-56*
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-56*
-224
250
2.0
A
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
725
VGS
EAS
IAR
mJ
A
-56
25
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
-2.1
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
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2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
-60 ––– –––
Test Conditions
VGS = 0V, ID = -1.0mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
BVDSS/TJ
RDS(on)
––– -0.064 –––
––– ––– 0.016
-2.0 ––– -4.0
V/°C Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -56A
V
VGS(th)
VDS = VGS, ID = -1.0mA
Gfs
IDSS
Forward Transconductance
40
––– –––
S
V
DS = -15V, ID = -56A
VDS = -48V, VGS = 0V
DS = -48V,VGS = 0V,TJ =125°C
VGS = -20V
GS = 20V
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
––– ––– 200
Zero Gate Voltage Drain Current
µA
nA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
ID = -56A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– –––
––– –––
––– –––
––– ––– 150
––– ––– 100
65
60
35
nC
ns
VDS = -30V
V
GS = -12V
VDD = -30V
ID = -56A
td(off)
tf
RG = 2.35
VGS = -12V
––– –––
35
Measured from center of Drain
pad to center of Source pad
Ls +LD
Total Inductance
––– 4.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 7022 –––
––– 2897 –––
––– 267 –––
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– ––– -56
A
ISM
VSD
trr
––– ––– -224
––– ––– -5.0
––– ––– 200
––– ––– 500
V
TJ=25°C, IS = -56A, VGS=0V
TJ=25°C, IF = -56A,VDD ≤-25V
di/dt = -100A/µs
Reverse Recovery Time
ns
nC
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
0.5
RJC
°C/W
Junction-to-PC Board (Soldered to 2” sq copper clad board)
–––
1.6
–––
RJ-PCB
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -30V, starting TJ = 25°C, L = 0.46mH, Peak IL = -56A, VGS = -12V
ISD -56A, di/dt -360A/µs, VDD -30V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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2017-03-08
IRHNA597064
JANSR2N7524U2
Radiation Characteristics
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100 kRads (Si)1
300 kRads (Si)2
Parameter
Units
Test Conditions
Min.
-60
Max.
–––
-4.0
-100
100
-10
Min.
-60
Max.
–––
-5.0
-100
100
-10
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = -1.0mA
VDS = VGS, ID = -1.0mA
VGS = -20V
-2.0
–––
–––
–––
-2.0
–––
–––
–––
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
nA
nA
µA
IGSS
VGS = 20V
IDSS
VDS = -48V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
0.016
–––
0.016
VGS = -12V, ID = -56A
Static Drain-to-Source
On-State Resistance (SMD-2)
RDS(on)
VSD
–––
–––
0.016
-5.0
–––
–––
0.016
-5.0
VGS = -12V, ID = -56A
VGS = 0V, ID = -56A
Diode Forward Voltage
V
1. Part numbers IRHNA597064, JANSR2N7524U2
2. Part numbers IRHNA593064, JANSF2N7524U2
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V
38 ± 5%
61 ± 5%
84 ± 5%
270 ± 7.5%
330 ± 7.5%
350 ± 7.5%
35 ± 7.5%
31 ± 7.5%
28 ± 7.5%
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-45
–––
-60
-25
–––
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
5
10
Bias VGS (V)
15
20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
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2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
1000
1000
100
10
VGS
-15V
-12V
VGS
-15V
TOP
TOP
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
100
-5.0V
20 s PULSE WIDTH
Tj = 25°C
20 s PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
ID = -56A
1.5
1.0
0.5
0.0
T
= 25°C
J
T
= 150°C
= -25V
J
V
DS
20 s PULSE WIDTH
V
=-12V
GS
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
5.5
6
6.5
7
7.5
8
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
16
12000
10000
8000
6000
4000
2000
0
V
C
= 0V, f = 1 MHZ
GS
V
V
= -48V
= -30V
DS
DS
= C + C , C SHORTED
I
= -56A
iss
gs
gd ds
D
C
= C
rss
gd
C
= C + C
12
8
oss
Ciss
ds gd
Coss
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
20
40
60
80 100 120 140 160
1
10
100
Q
Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G,
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
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2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100 s
1ms
T
= 25°C
J
10ms
1
1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.5
1.5
2.5
3.5
4.5
5.5
1
10
, Drain-to-Source Voltage (V)
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
1600
100
I
D
LIMITED BY PACKAGE
TOP
-25A
-35.4A
BOTTOM -56A
80
60
40
20
0
1200
800
400
0
25
50
75
100
125
°
( C)
150
25
50
75
100
125
150
T , Case Temperature
C
Starting T , Junction Temperature (°C)
J
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak T = P
x Z
+ Tc
thJC
J
DM
0.001
1E-005
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
-12V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
6
2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
Case Outline and Dimensions — SMD-2
IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change without notice.
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2017-03-08
IRHNA597064
JANSR2N7524U2
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
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2017-03-08
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