IRHNA67160SCV [INFINEON]
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL;型号: | IRHNA67160SCV |
厂家: | Infineon |
描述: | Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL |
文件: | 总9页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-94299C
2N7579U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA67160
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHNA67160
IRHNA63160
Radiation Level RDS(on)
ID
100K Rads (Si)
300K Rads (Si)
0.010Ω 56A*
0.010Ω 56A*
SMD-2
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2). Their combination of very low
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
R
and faster switching times reduces power
DS(on)
loss and increases power density in today’s high
speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@V
@V
= 12V,T = 25°C
Continuous Drain Current
56*
56*
D
D
GS
GS
C
A
I
= 12V,T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
224
DM
@ T = 25°C
P
D
250
W
W/°C
V
C
2.0
V
±20
GS
E
462
mJ
A
AS
I
56
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
5.0
T
-55 to 150
J
°C
g
T
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
STG
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
12/21/11
IRHNA67160, 2N7679U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.11
—
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
Ã
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.010
Ω
V
= 12V, I = 56A
DS(on)
GS D
2.0
—
60
—
—
-10.12
—
—
—
4.0
—
—
10
25
V
mV/°C
S
V
= V , I = 1.0mA
GS(th)
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= 25V, I
= 56A Ã
DS
DS
I
V
= 80V ,V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
100
-100
170
60
80
35
75
75
20
—
V
= 20V
= -20V
GSS
GSS
GS
nA
V
GS
Q
Q
Q
V
= 12V, I = 56A
g
gs
gd
d(on)
r
GS D
nC
V
= 50V
DS
t
t
t
t
V
V
GS
= 50V, I = 56A,
DD D
= 12V, R = 2.35Ω
G
ns
d(off)
f
L
+ L
Measured from the center of
S
D
nH
drain pad to center of source pad
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
8690
1600
20
—
—
—
V
GS
= 0V, V
= 25V
f = 1.0MHz
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
Ω
R
Gate Resistance
0.45
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
56*
224
1.2
500
5.5
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 56A, V
= 0V Ã
j
S
GS
T = 25°C, I = 56A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
0.5
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNA67160, 2N7579U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Upto 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
2.0
—
—
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
I
V
GS
= 20V
GSS
GSS
DSS
nA
µA
V
GS
= -20V
V
= 80V, V = 0V
DS GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.011
Ω
V
GS
= 12V, I = 56A
D
R
DS(on)
Static Drain-to-Source On-state
Resistance (SMD-2)
—
—
0.010
1.2
Ω
V
= 12V, I = 56A
D
GS
GS
V
Diode Forward Voltage
V
V
= 0V, I = 56A
D
SD
1. Part numbers IRHNA67160, IRHNA63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-5V
@VGS=
-10V
@VGS=
-15V
@VGS=
-19V
@VGS=
-20V
39 ± 5%
61 ± 5%
90 ± 5%
315 ± 5%
345 ± 5%
375 ± 7.5%
40 ± 5%
32 ± 7.5%
29 ± 7.5%
100
100
100
100
100
100
100
100
-
100
30
-
100
40
-
-
-
-
120
100
80
60
40
20
0
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA67160, 2N7679U2
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
10
5.0V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 56A
D
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
0µ
V
= 12V
GS
6
s PULSE WIDTH
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
5.5
V
6
6.5
7
7.5
8
8.5
9
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHNA67160, 2N7579U2
20
15
10
5
30
25
20
15
10
5
I
= 56A
T
= 150°C
= 25°C
J
D
T
J
T
= 150°C
J
J
T
= 25°C
V
= 12V
GS
0
0
0
40
80
120
160
200
240
4
6
8
10 12
14 16 18
20
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 6. Typical On-Resistance Vs
Fig 5. Typical On-Resistance Vs
DrainCurrent
GateVoltage
130
125
120
115
110
105
100
5.5
I
= 1.0mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 7. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 8. Typical Threshold Voltage Vs
Temperature
www.irf.com
5
IRHNA67160, 2N7679U2
Pre-Irradiation
14000
20
16
12
8
V
= 0V,
= C
f = 1 MHz
I
=
56A
D
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12000
10000
8000
6000
4000
2000
0
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE17
0
0
40
80
120
160
200
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
120
1000
100
10
LIMITED BY PACKAGE
100
80
60
40
20
0
T
= 150°C
J
= 25°C
T
J
V
= 0V
GS
1.0
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
V
, Source-to-Drain Voltage (V)
SD
T , Case Temperature (°C)
C
Fig 11. Typical Source-to-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
www.irf.com
Pre-Irradiation
IRHNA67160, 2N7579U2
1000
800
600
400
200
0
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
I
D
DS
TOP
25A
35.4A
56A
100
10
1
BOTTOM
µ
100 s
1ms
10ms
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
SINGLE PULSE
0.01
P
2
DM
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
7
IRHNA67160, 2N7679U2
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
www.irf.com
Pre-Irradiation
Footnotes:
IRHNA67160, 2N7579U2
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ä
GS
= 0 during
12 volt V
applied and V
Á
V
= 25V, starting T = 25°C, L= 0.29mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 56A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
Â
I
V
≤ 56A, di/dt ≤ 640A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2011
www.irf.com
9
相关型号:
IRHNA67264SCS
Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL
INFINEON
IRHNA6S7160
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS
INFINEON
IRHNA6S7160SCSD
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier
INFINEON
©2020 ICPDF网 联系我们和版权申明