IRHNA67164 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2); 抗辐射功率MOSFET表面贴装（ SMD - 2 ）
| 型号： | IRHNA67164 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) |
| 文件： | 总8页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96959A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
IRHNA67164
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNA67164 100K Rads (Si) 0.018Ω 56A*
IRHNA63164 300K Rads (Si) 0.018Ω 56A*
SMD-2
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
56*
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
49
224
D
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
283
mJ
A
AS
I
56
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
7.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
02/16/06
IRHNA67164
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
150
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.17
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.018
Ω
V
= 12V, I = 49A
DS(on)
GS D
Ã
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
50
—
—
—
—
—
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
GS
D
Ω
g
S ( )
V
= 15V, I
= 49A Ã
DS
I
10
25
V
DS
= 120V ,V =0V
GS
DSS
µA
—
V
= 120V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
100
-100
230
70
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
= 12V, I = 56A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
= 75V
DS
90
t
t
t
t
35
V
DD
= 75V, I = 56A,
D
170
85
V
= 12V, R = 2.35Ω
GS G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
35
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
—
7390
1144
28
—
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
g
Reverse Transfer Capacitance
Internal Gate Resistance
R
0.52
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
56*
224
1.2
S
A
SM
V
V
T = 25°C, I = 56A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
370
4.5
ns
µC
T = 25°C, I = 56A, di/dt ≤ 100A/µs
j
rr
RR
F
V
DD
≤ 50V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
0.5
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNA67164
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
150
2.0
—
—
4.0
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
V
GS
= 20V
GSS
nA
µA
I
—
V
= -20V
GS
GSS
I
—
V
= 120V, V = 0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Sourcee
On-State Resistance (SMD-2)
DS(on)
—
0.019
Ω
V
= 12V, I = 49A
GS
D
R
DS(on)
—
—
0.018
1.2
Ω
V
= 12V, I = 49A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 56A
D
GS
Part numbers IRHNA67164 and IRHNA63164
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
Ion Xe
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
Ion Au
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
VGS Bias
VDS Bias
VGS Bias
VDS Bias
VGS Bias
VDS Bias
(Volts)
0
-5
-10
-15
-20
(Volts)
150
150
150
150
(Volts)
0
-5
(Volts)
150
150
150
140
50
(Volts)
0
-5
(Volts)
50
50
-9
-10
30
-10
-11
-15
150
40
180
150
120
90
Kr
Xe
Au
60
30
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA67164
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
10
1
5.0V
60µs PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 56A
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
V
= 12V
GS
60µs PULSE WIDTH
1
5
5.5
6
6.5
7
7.5
8
8.5
9
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHNA67164
14000
20
16
12
8
f = 1 MHz
V
= 0V,
= C
GS
V
V
V
= 120V
I
= 56A
DS
DS
DS
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
= 75V
= 30V
12000
10000
8000
6000
4000
2000
0
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
Q
80
120 160 200 240 280
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µs
1ms
= 25°C
T
J
1
1
0ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.0
0.5
1.0
1.5
2.0
1.0
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHNA67164
Pre-Irradiation
RD
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
P
2
DM
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNA67164
600
500
400
300
200
100
0
I
D
15V
TOP
BOTTOM
56A
35.4A
25A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHNA67164
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
DS
Á
V
= 50V, starting T = 25°C, L= 0.18mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 56A, V
= 12V
L
GS
Å
Total Dose Irradiation with V
Bias.
 I
≤ 56A, di/dt ≤ 860/µs,
DS
= 0 during
SD
DD
120 volt V
applied and V
GS
V
≤ 150V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2006
8
www.irf.com
相关型号：
IRHNA67264SCS
Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL
INFINEON
IRHNA6S7160
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS
INFINEON
IRHNA6S7160SCSD
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier
INFINEON
©2020 ICPDF网 联系我们和版权申明