IRHNA6S7160 [INFINEON]
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS;
| 型号： | IRHNA6S7160 |
| 厂家： | 
Infineon |
| 描述： | Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS CD 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：616K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97868A
IRHNA6S7160
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNA6S7160
IRHNA6S3160
Radiation Level RDS(on)
ID
100 kRads(Si)
300 kRads(Si)
56A*
56A*
0.010
0.010
Features
Description
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750, Method 1020
IRHNA6S7160 is a part of the International Rectifier HiRel
family of products. IR HiRel R6 S-line technology provides
high performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 60 (MeV/(mg/cm2). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Parameter
Value
Units
56*
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
56*
224
250
2.0
A
IDM @ TC = 25°C
PD @ TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
±20
462
VGS
EAS
IAR
mJ
A
56
25
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
5.0
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
2018-07-05
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-
Resistance
100 ––– –––
––– 0.11 –––
V
BVDSS/TJ
RDS(on)
V/°C
VGS = 12V, ID = 56A
––– ––– 0.010
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 1.0mA
VGS(th)/TJ
gfs
Gate Threshold Voltage Coefficient
Forward Transconductance
––– -10.1 ––– mV/°C
60
VDS = 15V, ID = 56A
––– –––
S
IDSS
V
DS = 80V, VGS = 0V
––– –––
––– –––
10
25
Zero Gate Voltage Drain Current
µA
VDS = 80V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
VGS = 20V
GS = -20V
ID = 56A
––– ––– 100
––– ––– -100
––– ––– 170
nA
nC
V
QG
QGS
QGD
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 50V
––– –––
––– –––
––– –––
60
80
50
VGS = 12V
VDD = 50V
ID = 56A
––– ––– 150
––– ––– 100
ns
td(off)
tf
RG = 2.35
VGS = 12V
––– –––
50
Measured from center of Drain
pad to center of Source pad
Ls +LD
Total Inductance
––– 2.8
–––
nH
Ciss
Coss
Crss
RG
Input Capacitance
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
––– 8690 –––
––– 1600 –––
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
–––
20
–––
ƒ = 1.0MHz, open drain
––– 0.45 –––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– 56*
A
ISM
VSD
trr
––– ––– 224
––– –––
––– ––– 500
––– ––– 5.5
1.2
V
TJ=25°C, IS = 56A, VGS=0V
TJ=25°C, IF = 56A,VDD ≤ 25V
di/dt = 100A/µs
Reverse Recovery Time
ns
µC
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
* Current is limited by package
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
0.5
RJC
°C/W
Junction-to-PC Board (Soldered to 2” sq copper clad board)
–––
1.6
–––
RJ-PCB
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 0.29mH, Peak IL = 56A, VGS = 12V
ISD 56A, di/dt 640A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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2018-07-05
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Radiation Characteristics
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Up to 300 kRads (Si)1
Symbol
Parameter
Units
Test Conditions
Min.
100
2.0
Max.
–––
4.0
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
VGS = 20V
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
–––
–––
–––
100
-100
10
nA
nA
µA
IGSS
VGS = -20V
IDSS
VDS = 80V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
0.011
VGS = 12V, ID = 56A
Static Drain-to-Source
On-State Resistance (SMD-2)
RDS(on)
VSD
–––
–––
0.010
1.2
VGS = 12V, ID = 56A
VGS = 0V, ID = 56A
Diode Forward Voltage
V
1. Part numbers IRHNA6S7160 and IRHNA6S3160
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
(MeV/(mg/cm2))
0V
-5V
-10V
-15V
-17V
-19V
-20V
37.7
60.5
380
697
46
100
100
100
100
100
100
100
30
100
–––
100
–––
40
56.7
–––
120
100
80
60
40
20
0
LET = 37.7
LET = 60.5
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2018-07-05
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Pre-Irradiation
1000
100
10
1000
100
10
VGS
15V
12V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
60s PULSE WIDTH
Tj = 25°C
60s PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
I
= 56A
D
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
V
= 12V
GS
6
s PULSE WIDTH
1.0
5
5.5
6
6.5
7
7.5
8
8.5
9
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance Vs.
Fig 3. Typical Transfer Characteristics
Temperature
20
15
10
5
30
25
20
15
10
5
I
= 56A
T
= 150°C
D
J
T
= 25°C
J
T
= 150°C
J
J
T
= 25°C
V
= 12V
GS
0
0
4
6
8
10
12
14
16
18
20
0
40
80
120
160
200
240
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 6. Typical On-Resistance Vs Drain Current
Fig 5. Typical On-Resistance Vs Gate Voltage
International Rectifier HiRel Products, Inc.
4
2018-07-05
IRHNA6S7160
Pre-Irradiation
130
125
120
115
110
105
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
14000
12000
10000
8000
6000
4000
2000
0
V
= 0V,
f = 1 MHz
GS
C
C
C
= C + C , C
SHORTED
ds
iss
rss
oss
gs
gd
= C
gd
= C + C
ds
gd
C
iss
C
oss
C
rss
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
T
= 150°C
J
°C
25
=
T
J
V
= 0V
GS
1.0
0.4
0.6
SD
0.8
1.0
1.2
1.4
V
, Source-to-Drain Voltage (V)
Fig 12. Maximum Drain Current Vs.Case Temperature
2018-07-05
Fig 11. Typical Source-Drain Diode Forward Voltage
5
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Pre-Irradiation
1000
800
600
400
200
0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
I
D
25A
DS
TOP
35.4A
BOTTOM
56A
100 s
1ms
10ms
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
P
2
DM
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z + T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
2018-07-05
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Pre-Irradiation
V
(BR)DSS
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Gate Charge Test Circuit
Fig 17a. Gate Charge Waveform
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
7
2018-07-05
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Pre-Irradiation
Case Outline and Dimensions — SMD-2
www.infineon.com/irhirel
101 N. Sepulveda Boulevard, El Segundo, California 90245, USA Tel: +1 (310) 252-7105
2520 Junction Avenue, San Jose, California 95134, USA Tel: +1 (408) 434-5000
205 Crawford Street, Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
Data and specifications subject to change without notice.
8
2018-07-05
International Rectifier HiRel Products, Inc.
IRHNA6S7160
Pre-Irradiation
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
9
2018-07-05
International Rectifier HiRel Products, Inc.
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