IRHNA7160 [INFINEON]

TRANSISTOR N-CHANNEL; 晶体管N沟道


型号：	IRHNA7160
厂家：	Infineon
描述：	TRANSISTOR N-CHANNEL 晶体管N沟道晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总4页 (文件大小：138K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1396

IRHNA7160

IRHNA8160

N-CHANNEL

MEGA RAD HARD

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

Product Summary

100Volt, 0.045Ω, MEGA RAD HARD HEXFET

Part Number

IRHNA7160

IRHNA8160

BVDSS

100V

RDS(on)

0.045Ω

International Rectifier’s RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds.Since the RAD HARD

process utilizes International Rectifier’s patented

HEXFET technology, the user can expect the highest

quality and reliability in the industry.

51A

100V

Features:

Radiation Hardened up to 1 x 10⁶Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as

voltage control, very fast switching, ease of paralleling

and temperature stability of the electrical parameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Lightweight

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHNA7160, IRHNA8160

Units

@ V

= 12V, T = 25°C Continuous Drain Current

32.5

204

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

300

W/K ꢀ

2.0

±20

Single Pulse Avalanche Energy

Avalanche Current

500

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

5.5

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 sec.)

Package Mounting Surface Temperature

Weight

300

3.3 (typical)

To Order

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IRHNA7160, IRHNA8160 Devices

Pre-Radiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.13

DSS

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

2.0

—

0.045

0.050

4.0

—

= 12V, I =32.5 A

GS D

= 12V, I = 51A

GS D

DS(on)

Ω

S ( )

= V , I = 1.0 mA

DS D

GS(th)

> 15V, I

Ω

= 32.5A

= 0.8 x Max Rating,V

= 0V

DSS

= 0.8 x Max Rating

µA

—

250

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

8.7

100

-100

224

265

240

180

—

= 20V

= -20V

GSS

=12V, I = 51A

GS D

V = Max. Rating x 0.5

= 50V, I =51 A,

d(on)

DD D

R = 2.35Ω

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

8.7

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

6000

1700

280

—

= 0V, V

f = 1.0 MHz

= 25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

—

204

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.8

570

5.8

µC

T = 25°C, I = 51A, V

= 0V

T = 25°C, I = 51A, di/dt ≤ 100A/µs

≤ 50V

ForwardTurn-OnTime

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

0.42

thJC

K/Wꢀ

Junction-to-PC board

—

TBD

—

soldered to a copper-clad PC board

thJ-PCB

To Order

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IRHNA7160, IRHNA8160 Devices

Radiation Characteristics

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-

FETs are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

used. Both pre- and post-radiation performance are

tested and specified using the same drive circuitry

and test conditions in order to provide a direct com-

parison. It should be noted that at a radiation level

of 1 x 10⁵Rads (Si), no change in limits are speci-

fied in DC parameters.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented in Table 1, column

1, IRHNA7160. The values in Table 1 will be met for

either of the two low dose rate test circuits that are

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 1. Low Dose Rate

IRHNA7160 IRHNA8160

100K Rads (Si) 1000K Rads (Si) Units

min. max. min. max.

Parameter

Test Conditions

Drain-to-Source Breakdown Voltage 100

—

4.0

100

1.25

—

4.5

= 0V, I = 1.0 mA

GS D

DSS

Gate ThresholdVoltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

2.0

—

= V , I = 1.0 mA

GS(th)

100

-100

100

-100

= 20V

GSS

—

= -20V

GSS

—

µA

= 0.8 x Max Rating, V

= 0V

DSS

0.045

—

0.062

Ω

= 12V, I =32.5A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

1.8

—

1.8

= 25°C, I = 51A,V = 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min. Typ Max. Min. Typ. Max. Units

Parameter

Test Conditions

Applied drain-to-source voltage

DSS

Drain-to-Source Voltage

—

during gamma-dot

—

0.1

140

—

800

—

0.5

140

—

Peak radiation induced photo-current

di/dt

160 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence Range

Bias

(V)

100

Bias

(V)

-5

Parameter

Typ.

100

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

1 x 10⁵

~41

DSS

To Order

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IRHNA7160, IRHNA8160 Devices

Radiation Characteristics

Total Dose Irradiation with V

Bias.

= 0 during

Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

Total Dose Irradiation withV Bias.

@ V

= 25V, Starting T = 25°C,

(pre-radiation)

= [0.5

(I ²) [BV

/(BV -V )]

DSS DSS DD

= 0.8 rated BV

applied and V

DSS

= 0 during irradiation per

Peak I = 51A, V

= 12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

≤ 51A, di/dt ≤ 170 A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Process characterized by independent laboratory.

ꢀK/W = °C/W

All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions — SMD2

LEADASSIGNMENTS

DRAIN

GATE

SOURCE

NOTES:

1 DIMENSIONINGANDTOLERANCINGPERANSIY14.5M-1982

2.CONTROLLINGDIMENSION:INCH

3. DIMENSIONSARESHOWNINMILLIMETERS(INCHES)

4 DIMENSIONINCLUDESMETALLIZATIONFLASH

5 DIMENSIONDOESNOTINCLUDEMETALLIZATIONFLASH

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/96

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IRHNA7160 [INFINEON]

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