IRHNA7264SEPBF [INFINEON]

Power Field-Effect Transistor, 34A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-2, 3 PIN;


型号：	IRHNA7264SEPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 34A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-2, 3 PIN CD 开关脉冲晶体管
文件：	总8页 (文件大小：121K)
中文：	中文翻译
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PD-91432C

RADIATION HARDENED

POWER MOSFET

IRHNA7264SE

250V, N-CHANNEL

SURFACE MOUNT (SMD-2) RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNA7264SE 100K Rads (Si) 0.11Ω

34A

SMD-2

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

136

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

300

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

±20

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

2.5

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temperature

Weight

300 (for 5 sec.)

3.3 (Typical)

For footnotes refer to the last page

www.irf.com

5/31/01

IRHNA7264SE

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

250

—

= 0V, I = 1.0mA

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.32

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.5

—

0.110

0.123

4.5

= 12V, I = 21A

DS(on)

Ω

➀

= 12V, I = 34A

= V , I = 1.0mA

GS(th)

Ω

—

S ( )

> 15V, I

= 21A ➀

250

= 200V ,V =0V

DSS

DS GS

µA

—

= 200V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

100

-100

220

110

= 20V

= -20V

GSS

=12V, I = 34A

GS D

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

= 125V

=125V, I =34A,

DD D

V =12V, R = 2.35Ω

180

100

120

—

d(off)

+ L

Total Inductance

Measured from the center of drain

pad to center of source pad

Input Capacitance

Output Capacitance

—

4000

1300

480

—

= 0V, V = 25V

f = 1.0MHz

iss

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

Pulse Source Current (Body Diode) ➀

136

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.4

700

T = 25°C, I = 34A, V

= 0V ➀

µC

T = 25°C, I = 34A, di/dt ≤ 100A/µs

≤ 50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

0.42

—

thJC

thJ-PCB

°C/W

Junction-to-PC board

1.6

Soldered to a 1 inch square clad PC board

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Pre-Irradiation

IRHNA7264SE

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

250

2.0

—

4.5

= 0V, I = 1.0mA

DSS

GS D

= V , I = 1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

= 20V

GSS

µA

—

= -20V

GSS

—

= 200V, V =0V

DSS

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-2)

Diode Forward Voltage

DS(on)

—

0.11

Ω

= 12V, I = 21A

DS(on)

—

0.11

1.4

Ω

= 12V, I = 21A

= 0V, I = 34A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

V_DS(V)

Ion

LET

Energy

Range

(µm)

MeV/(mg/cm²)) (MeV)

@V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

285

305

250

225

250

210

36.8

300

250

200

150

100

-5

-10

VGS

-15

-20

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNA7264SE

Pre-Irradiation

1000

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

100

BOTTOM 5.0V

0.1

0.01

5.0V

20µs PULSE WIDTH

T = 25 C

T = 150 C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

34A

T = 150 C

T = 25 C

= 50V

20µs PULSE WIDTH

= 12V

0.1

10 11

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature( C)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHNA7264SE

8000

= 31A

= 0V,

f = 1MHz

C SHORTED

= C + C

iss

gd ,

= 125V

= C

rss

= C + C

oss

6000

4000

2000

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120

160

200

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

100us

1ms

T = 150 C

T = 25 C

10ms

T = 150 C

Single Pulse

= 0 V

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

100

1000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHNA7264SE

Pre-Irradiation

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHNA7264SE

1000

800

600

400

200

TOP

14.A

20.A

BOTTOM 31A

15V

DRIVER

D S

D.U.T

D D

₂V_0V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHNA7264SE

Footnotes:

Pre-Irradiation

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀➀➀Total Dose Irradiation with V Bias.

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

➀➀➀V

= 50V, starting T = 25°C, L= 0.86 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 34A, V

= 12V

➀➀Total Dose Irradiation with V Bias.

➀➀ I

≤ 34A, di/dt ≤300A/µs,

= 0 during

200 volt V

applied and V

≤ 250V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —SMD-2

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/01

www.irf.com

IRHNA7264SEPBF [INFINEON]

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