IRHNJ67234B [INFINEON]
Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed;
| 型号： | IRHNJ67234B |
| 厂家： | 
Infineon |
| 描述： | Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed |
| 文件： | 总9页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97197C
IRHNJ67234
RADIATION HARDENED
POWER MOSFET
JANSR2N7593U3
250V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/746
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
QPL Part Number
IRHNJ67234 100K Rads (Si)
IRHNJ63234 300K Rads (Si)
0.21Ω 12.4A JANSR2N7593U3
0.21Ω 12.4A JANSF2N7593U3
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
n
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
12.4
7.8
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
49.6
75
DM
@ T = 25°C
P
D
W
W/°C
V
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
56
mJ
A
AS
I
12.4
7.5
AR
E
AR
dv/dt
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
5.5
T
-55 to 150
J
°C
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/08/14
IRHNJ67234, JANSR2N7593U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
250
—
—
V
V = 0V, I = 1.0mA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.24
—
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
Ã
R
Static Drain-to-Source On-State
Resistance
—
—
0.21
Ω
V = 12V, I = 7.8A
GS D
DS(on)
V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
2.0
—
8.8
—
—
-9.16
—
—
—
4.0
—
—
10
25
V
mV/°C
S
V
= V , I = 1.0mA
GS(th)
DS
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= 15V, I
= 7.8A Ã
DS
I
Zero Gate Voltage Drain Current
V
= 200V ,V =0V
DSS
DS GS
µA
—
V
= 200V,
DS
= 0V, T = 125°C
V
GS
GS
DD
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
15
20
25
30
60
30
V
= 20V
= -20V
GSS
GSS
GS
nA
V
GS
Q
Q
Q
V
= 12V, I = 12.4A
g
gs
gd
d(on)
r
D
nC
V
= 125V
DS
t
t
t
t
V
= 125V, I = 12.4A,
D
V
= 12V, R = 7.5Ω
GS
G
ns
d(off)
f
L
S
+ L
—
Measured from the center of
D
nH
drain pad to center of source pad
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1445
187
2.4
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
GS
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
Ω
R
g
Gate Resistance
1.2
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
12.4
49.6
1.2
350
5.15 µC
S
SM
SD
rr
A
V
ns
T = 25°C, I = 12.4A, V
= 0V Ã
j
S
GS
T = 25°C, I = 12.4, di/dt ≤ 100A/µs
j
F
V
DD
≤ 50V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
1.67
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ67234, JANSR2N7593U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
250
2.0
—
—
—
—
4.0
100
-100
10
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
V
GS
= 20V
GSS
nA
µA
I
V
= -20V
GS
GSS
I
V
= 200V, V = 0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.21
Ω
V
GS
= 12V, I = 7.8A
D
R
DS(on)
Static Drain-to-Source On-State
Resistance (SMD-0.5)
—
—
0.21
1.2
Ω
V
= 12V, I = 7.8A
D
GS
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 12.4A
D
1. Part numbers IRHNJ67234 (JANSR2N7593U3) and IRHNJ63234 (JANSF2N7593U3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-5V
@VGS=
-10V
@VGS=
-15V
@VGS=
-20V
44 ± 5%
61 ± 5%
90 ± 5%
1350 ± 5%
825 ± 5%
1470 ± 5%
125 ± 10%
66 ± 7.5%
80 ± 5%
250
250
75
250
250
75
250
250
-
250
50
-
40
-
-
300
250
200
150
100
50
LET=44 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ67234, JANSR2N7593U3
Pre-Irradiation
100
10
1
100
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
8.0V
7.0V
6.0V
5.5V
10
1
5.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 12.4A
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
60µs PULSE WIDTH
V
= 12V
GS
5
5.5
V
6
6.5
7
7.5
8
8.5
9
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHNJ67234, JANSR2N7593U3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 12.4A
D
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
T
= 25°C
J
V
= 12V
50
GS
4
8
12
16
20
24
0
10
20
30
40
60
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
320
310
300
290
280
270
260
250
6.0
I
= 1.0mA
D
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 50µA
D
D
D
D
I
I
I
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
www.irf.com
5
IRHNJ67234, JANSR2N7593U3
Pre-Irradiation
2800
20
16
12
8
V
= 0V,
= C
f = 1 MHz
SHORTED
GS
V
V
V
= 200V
I
= 12.4A
DS
DS
DS
C
C
C
+ C , C
D
iss
gs
gd
ds
= 125V
= 50V
2400
2000
1600
1200
800
400
0
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
8
16
24
32
40
48
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G,
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
14
12
10
8
100
10
T
= 150°C
J
= 25°C
T
J
1
6
4
0.1
0.01
2
V
= 0V
GS
0
25
50
T
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
, Case Temperature (°C)
V
, Source-to-Drain Voltage (V)
C
SD
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
www.irf.com
Pre-Irradiation
IRHNJ67234, JANSR2N7593U3
100
100
80
60
40
20
0
OPERATION IN THIS AREA LIMITED BY R (on)
DS
I
D
TOP
5.5A
7.8A
10
1
BOTTOM 12.4A
100µs
1ms
10ms
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
DS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
10
1
D = 0.50
0.20
P
DM
0.10
t
1
SINGLE PULSE
( THERMAL RESPONSE )
0.05
t
2
0.02
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1 10
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
7
IRHNJ67234, JANSR2N7593U3
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
L
V
DS
.
D.U.T
R
G
+
-
V
DD
I
A
AS
V
.
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
www.irf.com
Pre-Irradiation
Footnotes:
IRHNJ67234, JANSR2N7593U3
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ã
Å
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V
Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L = 0.73mH
J
12 volt V
applied and V
DD
Peak I = 12.4A, V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
= 12V
L
GS
Â
I
SD
DD
≤ 12.4A, di/dt ≤ 660A/µs,
Total Dose Irradiation with V
Bias.
DS
= 0 during
V
≤ 250V, T ≤ 150°C
200 volt V
applied and V
J
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2014
www.irf.com
9
相关型号：
IRHNJ67234SCS
Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRHNJ7130PBF
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
INFINEON
IRHNJ7330SEPBF
Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
INFINEON
IRHNJ7330SESCS
Power Field-Effect Transistor, 5.3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明