IRHNJ67434_15 [INFINEON]
Simple Drive Requirements;
| 型号： | IRHNJ67434_15 |
| 厂家： | 
Infineon |
| 描述： | Simple Drive Requirements |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97804
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67434
550V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHNJ67434
IRHNJ63434
Radiation Level RDS(on)
ID
3.4A
3.4A
100K Rads (Si)
300K Rads (Si)
2.9Ω
2.9Ω
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2).
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Their combination of very low R
and faster
DS(on)
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
3.4
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
2.2
13.6
75
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
76
mJ
A
AS
I
3.4
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
9.2
T
-55 to 150
J
°C
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
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1
01/11/13
IRHNJ67434
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
550
—
—
V
V = 0V, I = 1.0mA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.47
—
V/°C Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
Ã
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.9
Ω
V
= 12V, I = 2.2A
DS(on)
GS D
2.0
3.4
—
—
—
—
—
4.0
—
10
25
V
S
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
g
V
= 15V, I
= 2.2A Ã
DS
DS
I
V
DS
= 440V ,V =0V
GS
DSS
µA
—
V
= 440V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
35
12
15
17
9.3
33
17
—
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= 12V, I = 3.4A
V
g
gs
gd
d(on)
r
GS
D
= 275V
DS
t
t
t
t
V
DD
= 275V, I = 3.4A,
= 12V, R = 7.5Ω
GS G
D
V
ns
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1222
80
1.9
1.5
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
Ω
f = 1.0MHz, open drain
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
3.4
13.6
1.0
741
2.1
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 3.4A, V
= 0V Ã
j
S
GS
T = 25°C, I = 3.4A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 50V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ67434
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
550
2.0
—
—
—
—
4.0
100
-100
10
V
V
= 0V, I = 1.0mA
GS D
DSS
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
V
GS
= 20V
GSS
nA
µA
I
V
= -20V
GS
GSS
I
V
= 440V, V = 0V
GS
DSS
DS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Diode Forward Voltage
DS(on)
—
—
2.9
1.0
Ω
V
= 12V, I = 2.2A
D
GS
V
V
V
= 0V, I = 3.4A
D
GS
SD
1. Part numbers IRHNJ67434 and IRHNJ63434
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
V
DS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2))
@V =-0V
GS
@V =-4V @V =-12V @V =-20V
(MeV)
(µm)
GS
GS
550
550
-
GS
550
-
Kr
Xe
Au
32.4
56.2
89.5
679
83.3
83.5
84
550
550
550
550
550
550
1060
1555
-
800
600
400
200
0
Kr
Xe
Au
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ67434
Pre-Irradiation
100
10
1
100
VGS
VGS
TOP
15V
12V
10V
8.0V
6.0V
5.5V
5.0V
TOP
15V
12V
10V
8.0V
6.0V
5.5V
5.0V
10
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
4.5V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
I
= 3.4A
D
T
= 150°C
J
T = 25°C
J
V
= 50V
DS
60µs PULSE WIDTH
V
= 12V
GS
0.1
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHNJ67434
2000
20
16
12
8
V
= 0V,
= C
f = 1 MHz
GS
I
= 3.4A
V
V
V
= 480V
C
C
C
+ C , C
SHORTED
D
DS
DS
DS
iss
gs
gd
ds
= C
= 300V
= 120V
rss
oss
gd
1600
1200
800
400
0
= C + C
ds
gd
C
iss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
C
oss
rss
0
1
10
100
0
4
8
12 16 20 24 28 32 36 40
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
Q
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µs
1ms
T
= 150°C
J
1
1
= 25°C
T
J
0.1
0.01
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
GS
10
100
, Drain-to-Source Voltage (V)
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ67434
Pre-Irradiation
RD
4
VDS
VGS
3
2
1
0
VDD
D.U.T.
RG
+
-
VGS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
25
50
75
100
125
150
90%
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
CaseTemperature
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
10
P
DM
1
D = 0.50
t
0.20
0.10
1
t
2
SINGLE PULSE
( THERMAL RESPONSE )
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1 10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ67434
160
120
80
40
0
15V
I
D
TOP
BOTTOM
1.5A
2.2A
3.4A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2V
.
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
t
p
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
IRHNJ67434
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L = 13mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 3.4A, V
= 12V
L
GS
Å
Total Dose Irradiation with V
Bias.
Â
I
V
≤ 3.4A, di/dt ≤ 628A/µs,
DS
= 0 during
SD
DD
440 volt V
applied and V
≤ 550V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2013
8
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