IRHNJ7130PBF [INFINEON]
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN;
| 型号： | IRHNJ7130PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总8页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93820
IRHNJ7130
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
RAD-Hard™ HEXFET®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ7130 100K Rads (Si)
IRHNJ3130 300K Rads (Si)
IRHNJ4130 600K Rads (Si)
0.18Ω 14.4A
0.18Ω 14.4A
0.18Ω 14.4A
IRHNJ8130 1000K Rads (Si) 0.18Ω 14.4A
SMD-0.5
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
14.4
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
9.1
58
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
±20
GS
E
150 ➁
14.4
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
6.0 ➂
-55 to 150
T
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
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1
2/4/00
IRHNJ7130
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.18
0.20
4.0
—
V
= 12V, I = 9.1A
GS D
DS(on)
➃
Ω
V
= 12V, I = 14.4A
GS D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
2.5
—
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 9.1A ➃
DS
V
DS
I
25
= 80V, V =0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
= 12V, I = 14.4A
V
g
gs
gd
d(on)
r
GS
D
= 50V
10
DS
20
t
t
t
t
35
75
V
DD
= 50V, I = 14.4A,
R
D
= 7.5Ω
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
70
d(off)
60
—
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
960
340
85
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
14.4
58
1.5
275
2.5
S
A
SM
SD
V
T = 25°C, I = 14.4A, V
= 0V ➃
GS
j
S
Reverse Recovery Time
nS
µC
T = 25°C, I = 14.4A, di/dt ≥ 100A/µs
j
rr
F
V
Q
Reverse Recovery Charge
≤ 25V ➃
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
1.67
thJC
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ7130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
1
Parameter
100KRads(Si)
300K to 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
100
2.0
—
—
100
1.25
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
➃
4.0
V = V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
25
V
= 20V
GSS
GS
GS
nA
I
—
—
V
= -20 V
GSS
I
—
—
—
—
µA
Ω
V
V
= 80V, V =0V
GS
= 12V, I = 9.1A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
➃
0.19
0.25
R
DS(on)
➃
—
—
0.18
1.5
—
—
0.24
1.5
Ω
V
= 12V, I = 9.1A
D
GS
V
SD
➃
V
V
= 0V, I = 14.4A
GS S
1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130
2. Part number IRHNJ8130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
43.0
39.0
100
100
100
90
100
70
80
50
60
—
36.8
305
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ7130
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
5.0V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
14.4A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
20µs PULSE WIDTH
DS
V
= 12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
7
9
11 13
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHNJ7130
20
16
12
8
2000
I
D
= 14 A
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
C
= C + C
gd
oss
ds
1500
1000
500
0
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.0
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHNJ7130
Pre-Irradiation
RD
15
12
9
VDS
VGS
D.U.T.
RG
+VDD
-
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHNJ7130
400
300
200
100
0
I
D
TOP
6.4A
9.1A
BOTTOM 14A
15V
DRIVER
L
V
D S
D.U.T
R
.
G
+
V
D D
-
I
A
AS
12V
2
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ7130
Footnotes:
Pre-Irradiation
➄ Total Dose Irradiation with V
Bias.
GS
= 0 during
➀ Repetitive Rating; Pulse width limited by
12 volt V
applied and V
maximum junction temperature.
GS
DS
irradiation per MIL-STD-750, method 1019, condition A
➁ V
= 25V, starting T = 25°C, L= 1.4mH,
J
DD
Peak I = 14.4A, V
= 12V
➅ Total Dose Irradiation with V Bias.
L
GS
DS
= 0 during
80 volt V
DS
applied and V
GS
➂ I
≤ 14.4A, di/dt ≤ 395A/µs,
≤ 100V, T ≤ 150°C
J
SD
irradiation per MlL-STD-750, method 1019, condition A
V
DD
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 3/00
8
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