IRHNJ7430SEPBF [INFINEON]

Power Field-Effect Transistor, 4.4A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN;


型号：	IRHNJ7430SEPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 4.4A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN 开关脉冲晶体管
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PD-93830C

IRHNJ7430SE

JANSR2N7466U3

500V, N-CHANNEL

REF: MIL-PRF-19500/676

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNJ7430SE 100K Rads (Si) 1.77Ω 4.4A JANSR2N7466U3

SMD-0.5

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a

decade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

4.4

2.8

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

17.6

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single PulseAvalanche Energy Á

Avalanche Current À

±20

150

4.4

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

2.5

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

07/25/12

IRHNJ7430SE, JANSR2N7466U3

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

500

—

= 0V, I = 1.0mA

DSS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.61

—

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

1.77

Ω

= 12V, I = 2.8A

GS D

DS(on)

2.5

0.4

—

4.5

—

= V , I = 1.0mA

GS(th)

>= 15V, I

= 2.8A Ã

= 400V ,V = 0V

DSS

µA

—

250

= 400V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

4.0

100

-100

8.0

= 20V

= -20V

GSS

=12V, I = 4.4A

d(on)

GS D

= 250V

= 250V, I = 4.4A,

=12V, R = 7.5Ω

GS G

d(off)

+ L

—

Measured from the center of

drain pad to center of source pad

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

570

150

—

= 0V, V

= 25V

f = 1.0MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

—

4.4

17.6

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.2

400

3.8

µC

T = 25°C, I = 4.4A, V

= 0V Ã

T = 25°C, I = 4.4A, di/dt ≤ 100A/µs

≤ 50V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC board

—

6.9

1.67

—

thJC

thJ-PCB

°C/W

soldered to a 2 square copper-clad board

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

IRHNJ7430SE, JANSR2N7466U3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

500

2.0

—

4.5

100

-100

= 0V, I = 1.0mA

DSS

= V , I = 1.0mA

GS(th)

= 20V

GSS

µA

= -20V

GSS

= 400V, V = 0V

DSS

DS GS

DS(on)

On-State Resistance (TO-3)

—

1.77

Ω

= 12V, I = 2.8A

Static Drain-to-Source

On-State Resistance (SMD-0.5)

DS(on)

—

1.77

1.2

Ω

= 12V, I = 2.8A

Diode Forward Voltage

= 0V, I = 4.4A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

V_DS(V)

Ion

LET

Energy

(MeV)

285

Range

(MeV/(mg/cm²))

(µm) @V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

36.8

375

350

375

350

375

350

375

325

375

300

305

400

300

200

100

-5

-10

VGS

-15

-20

Fig a. Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNJ7430SE, JANSR2N7466U3

Pre-Irradiation

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

VGS

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

BOTTOM5.0V

0.1

0.01

5.0V

20µs PULSE WIDTH

T = 150 C

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

44..45AA

T = 150 C

T = 25 C

0.1

0.01

= 50V

20µs PULSE WIDTH

=12V

-60 -40 -20

20 40 60 80 100 120 140 160

11 13

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHNJ7430SE, JANSR2N7466U3

1200

= 0V,

f = 1MHz

C SHORTED

4.4A

= 4.5A

= 400V

= 250V

= 100V

= C + C

iss

gd ,

= C

rss

= C + C

oss

900

600

300

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R (on)

T = 150 C

100 s

1ms

T = 25 C

0.1

0.01

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

0.1

0.4

0.8

1.2

1.6

100

, Drain-to-Source Voltage (V)

1000

,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHNJ7430SE, JANSR2N7466U3

Pre-Irradiation

R_D

5.0

4.0

3.0

2.0

1.0

0.0

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

SINGLE PULSE

0.02

0.01

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHNJ7430SE, JANSR2N7466U3

250

200

150

100

TOP

2.0A

2.8A

15V

BOTTOM 4.4A

DRIVER

D.U.T

V_GS

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHNJ7430SE, JANSR2N7466U3

Footnotes:

Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

= 50V, starting T = 25°C, L=15.5 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 4.4A, V

= 12V

Å Total Dose Irradiation with V

Bias.

≤ 4.4A, di/dt ≤ 260A/µs,

applied and V = 0 during

400 volt V

≤ 500V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-0.5

PAD ASSIGNMENTS

1 = DRAIN

2 = GATE

3 = SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 07/2012

www.irf.com

IRHNJ7430SEPBF [INFINEON]

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