IRHNJ8130SCS [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRHNJ8130SCS |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-93820C
IRHNJ7130
JANSR2N7380U3
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RAD-Hard HEXFET TECHNOLOGY
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
IRHNJ7130
IRHNJ3130
IRHNJ5130
IRHNJ8130
Radiation Level
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
RDS(on)
ID
QPL Part Number
14.4A
14.4A
14.4A
14.4A
JANSR2N7380U3
JANSF2N7380U3
JANSG2N7380U3
JANSH2N7380U3
0.18
0.24
0.24
0.24
Description
Features
IR HiRel RAD-Hard HEXFET technology provides high
performance power MOSFETs for space applications.
This technology has over a decade of proven performance
and reliability in satellite applications. These devices have
been characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching and
temperature stability of electrical parameters.
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic package
Light Weight
Surface Mount
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
14.4
A
9.1
57.6
75
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
0.6
VGS
EAS
IAR
± 20
150
14.4
7.5
mJ
A
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
6.0
-55 to + 150
TSTG
°C
g
300 (5 sec)
Weight
1.0 (Typical)
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-02-05
IRHNJ7130
JANSR2N7380U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
100 ––– –––
––– 0.11 –––
V
BVDSS/TJ
V/°C Reference to 25°C, ID = 1.0mA
Static Drain-to-Source On-State
Resistance
––– ––– 0.18
VGS = 12V, ID = 9.1A
RDS(on)
––– –––
0.20
4.0
VGS = 12V, ID = 14.4A
VGS(th)
Gate Threshold Voltage
Forward Transconductance
2.0
2.5
–––
V
S
VDS = VGS, ID = 1.0mA
DS = 15V, ID = 9.1A
VDS = 80V, VGS = 0V
DS = 80V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
Gfs
IDSS
––– –––
25
V
––– –––
Zero Gate Voltage Drain Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
40
10
20
35
75
70
30
ID = 14.4A
VDS = 50V
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nC
ns
VGS = 12V
VDD = 50V
ID = 14.4A
RG = 7.5
td(off)
tf
VGS = 12V
Measured from center of Drain
pad to center of Source pad
Ls +LD
Total Inductance
–––
4.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
––– 960 –––
––– 340 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
85
–––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– 14.4
A
ISM
––– ––– 57.6
VSD
trr
––– –––
––– ––– 275
––– ––– 2.5
1.5
V
TJ = 25°C,IS =14.4A,VGS = 0V
TJ = 25°C, IF=14.4A, VDD ≤25V
di/dt = 100A/µs
Reverse Recovery Time
ns
µC
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
1.67
RJC
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L =1.4mH, Peak IL = 14.4A, VGS = 12V
ISD 14.4A, di/dt 395A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-02-05
IRHNJ7130
JANSR2N7380U3
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100 kRads (Si)1
Up to
Symbol
Parameter
Units
Test Conditions
Min.
100
2.0
Max.
–––
4.0
Min.
100
1.25
–––
–––
–––
Max.
–––
4.5
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
–––
–––
–––
100
-100
25
100
-100
50
nA VGS = 20V
IGSS
nA VGS = -20V
IDSS
µA VDS = 80V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
0.18
–––
0.24
VGS = 12V, ID2 = 9.1A
Static Drain-to-Source
On-State Resistance (SMD-0.5)
RDS(on)
VSD
–––
–––
0.18
1.5
–––
–––
0.24
1.5
VGS = 12V, ID2 = 9.1A
VGS = 0V, IS = 14.4A
Diode Forward Voltage
V
1. Part number IRHNJ7130 (JANSR2N7380U3)
2. Part numbers IRHNJ3130 (JANSF2N7380U3), IRHNJ5130 (JANSG2N7380U3), IRHNJ8130 (JANSH2N7380U3)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@VGS = 0V @VGS = -5V @VGS = -10V @VGS = -15V @VGS = -20V
28 ± 5%
37 ± 5%
283.3 ± 7.5% 42.8 ± 5%
100
100
100
90
100
70
80
50
60
-
305 ± 5%
39 ± 5%
120
100
80
60
40
20
0
LET = 28 ± 5%
LET = 37 ± 5%
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-02-05
IRHNJ7130
JANSR2N7380U3
Pre-Irradiation
100
10
1
100
10
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 150
J
°
°
C
T = 25
J
C
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
100
10
1
14.4A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
7
9
11 13
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
2000
1500
1000
500
0
20
V
= 0V,
f = 1MHz
C
I
D
= 14 A
GS
C
= C + C
SHORTED
iss
gs
gd ,
gd
ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
16
12
8
oss
C
iss
C
4
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
4
International Rectifier HiRel Products, Inc.
2019-02-05
IRHNJ7130
JANSR2N7380U3
Pre-Irradiation
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
°
T = 25 C
J
100 s
1ms
10ms
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
2.0
0.1
0.0
0.1
0.5
1.0
1.5
2.5
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
15
12
9
6
3
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
Fig 10. Maximum Avalanche Energy
Fig 9. Maximum Drain Current Vs. Case Temperature
Vs. Drain Current
10
1
D =0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2.Peak T =P
x Z
+ T
C
J
DM
thJ C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2019-02-05
IRHNJ7130
JANSR2N7380U3
Pre-Irradiation
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
International Rectifier HiRel Products, Inc.
Fig 14b. Switching Time Waveforms
6
2019-02-05
IRHNJ7130
JANSR2N7380U3
Pre-Irradiation
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7
International Rectifier HiRel Products, Inc.
2019-02-05
IRHNJ7130
JANSR2N7380U3
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
8
International Rectifier HiRel Products, Inc.
2019-02-05
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