IRHQ7110 [INFINEON]

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28); 抗辐射功率MOSFET表面贴装（ LCC -28 ）


型号：	IRHQ7110
厂家：	Infineon
描述：	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 抗辐射功率MOSFET表面贴装（ LCC -28 ）晶体晶体管功率场效应晶体管开关脉冲
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PD - 93785A

IRHQ7110

100V, QUAD N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

RAD-Hard^™HEXFET^®

MOSFETTECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHQ7110

IRHQ3110

IRHQ4110

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.6Ω

0.75Ω

3.0A

IRHQ8110 1000K Rads (Si)

LCC-28

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC

to DC converters and motor control. These devices re-

tain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of parallel-

ing and temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

3.0

= 12V, T = 100°C Continuous Drain Current

1.9

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.1

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

3.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

1.2

V/ns

dv/dt

3.0

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes refer to the last page

www.irf.com

12/27/00

IRHQ7110

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0mA

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.11

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.62

0.60

4.0

—

= 12V, I = 3.0A

DS(on)

➀

Ω

= 12V, I = 1.9A

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

1.4

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 1.9A ➀

= 80V, V =0V

DS GS

DSS

µA

—

250

= 80V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

6.1

100

-100

4.0

5.5

= 20V

GSS

= -20V

= 12V, I = 3.0A

d(on)

GS D

= 50V

= 50V, I = 3.0A,

= 12V, R = 7.5Ω

Turn-Off Delay Time

FallTime

Total Inductance

d(off)

—

+ L

Measured from the center of

drain pad to center of source pad

Input Capacitance

—

270

110

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

3.0

1.2

173

863

T = 25°C, I = 3.0A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I = 3.0A, di/dt ≥ 100A/µs

Reverse Recovery Charge

≤ 25V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance (Per Die)

Parameter

Min Typ Max Units

Test Conditions

°C/W

Junction-to-Case

—

10.4

thJC

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

IRHQ7110

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀➀(Per Die)

Parameter

100KRads(Si)

300K to 1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

2.0

—

4.0

100

-100

100

1.25

—

4.5

100

-100

= 0V, I = 1.0mA

DSS

GS D

= V , I = 1.0mA

DS D

GS(th)

= 20V

GSS

—

= -20 V

GSS

—

µA

Ω

= 80V, V =0V

= 12V, I = 1.9A

DSS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-39)

Static Drain-to-Source

On-State Resistance (LCC-28)

Diode Forward Voltage

➀

0.556

0.706

DS(on)

➀

—

0.60

1.2

—

0.75

1.2

Ω

= 12V, I = 1.9A

➀

= 0V, I = 3.0A

GS S

1. Part numbers IRHQ7110, IRHQ3110, IRHQ4110

2. Part number IRHQ8110

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area (Per Die)

V_DS(V)

Ion

LET

MeV/(mg/cm²))

28.0

Energy

(MeV)

285

Range

(µm) @V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

43.0

39.0

32.6

100

—

36.8

305

59.8

343

—

120

100

-5

-10

-15

-20

-25

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHQ7110

Pre-Irradiation

100

TOP

100

VGS

15V

VGS

15V

TOP

12V

10V

9.0V

8.0V

7.0V

6.0V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.0A

T = 25 C

T = 150 C

= 50V

20µs PULSE WIDTH

= 12V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

11 13

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

www.irf.com

Pre-Irradiation

IRHQ7110

500

= 0V,

f = 1MHz

C SHORTED

3.0A

= 3.7A

= 80V

= 50V

= 20V

= C + C

iss

gd ,

= C

rss

= C + C

400

300

200

100

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

T = 150 C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.4

0.1

0.6

0.8

1.0

1.2

1.4

100

1000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

www.irf.com

IRHQ7110

Pre-Irradiation

R_D

3.0

2.5

2.0

1.5

1.0

0.5

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

0.0

100

125

150

, Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.1

Notes:

1. Duty factor D =

/ t

1 2

2. Peak T = P

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

www.irf.com

Pre-Irradiation

IRHQ7110

200

150

100

TOP

1.3A

1.9A

BOTTOM 3.0A

15V

DRIVER

D S

D.U.T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig12b. UnclampedInductiveWaveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHQ7110

Pre-Irradiation

Footnotes:

➀➀➀Total Dose Irradiation with V

Bias.

➀➀ Repetitive Rating; Pulse width limited by

12 volt V

applied and V = 0 during

maximum junction temperature.

irradiation per MIL-STD-750, method 1019, condition A

➀➀➀V

= 25V, starting T = 25°C, L= 18.7mH,

Peak I = 3.0A, V

= 12V

➀➀Total Dose Irradiation with V Bias.

= 0 during

80 volt V

applied and V

➀➀ I

≤ 3.0A, di/dt ≤ 165A/µs,

≤ 100V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — LCC-28

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 12/00

www.irf.com

IRHQ7110 [INFINEON]

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