IRHSLNA57Z60 [INFINEON]
RAD-HARD IRHSLNA57Z60 RECTIFIER SURFACE MOUNT (SMD-2); RAD- HARD IRHSLNA57Z60整流器表面贴装( SMD - 2 )型号: | IRHSLNA57Z60 |
厂家: | Infineon |
描述: | RAD-HARD IRHSLNA57Z60 RECTIFIER SURFACE MOUNT (SMD-2) |
文件: | 总9页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-94400B
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57Z60
30V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on)
QG
IRHSLNA57Z60 100K Rads (Si) 4.0mΩ 200nC
IRHSLNA53Z60 300K Rads (Si) 4.0mΩ 200nC
IRHSLNA54Z60 600K Rads (Si) 4.0mΩ 200nC
IRHSLNA58Z60 1000K Rads (Si) 4.5mΩ 200nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications.RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area.Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
n
n
n
n
Refer to IRHSNA57Z60 for Lower Rds(on)
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain or Source Current
75*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain or Source Current
75*
300
D
GS
C
I
Pulsed Drain Current ➀
DM
@ T = 25°C
P
Max. Power Dissipation
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
GS
Gate-to-Source Voltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy ➀
Schottky and Body Diode Avg. Forward Current ➀
Schottky and Body Diode Avg. Forward Current ➀
Opeating and Storage Temperature Range
25
mJ
AR
(AV)@ T = 25°C
I
F
75*
C
A
I
(AV)@ T =100°C
75*
F
C
T
T
-55 to 150
J, STG
°C
g
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/30/04
IRHSLNA57Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
30
—
—
—
—
V
V
GS
V
GS
= 0V, I = 1.0mA
D
DSS
R
mΩ
= 12V, I = 45A
DS(on)
4.0
D
V
Gate Threshold Voltage
2.0
45
—
—
—
—
—
4.0
—
V
V
= V
I
= 1.0mA
GS(th)
fs
DS
GS, D
Ω
g
Forward Transconductance
Zero Gate Voltage Drain Current
S ( )
µA
V
DS
> 15V, I
= 45A
DS
I
50
50
V
= 24V, V =0V
DS GS
DSS
—
mA
V
= 24V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
100
-100
200
55
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
—
—
—
—
—
—
—
6.6
V
=12V, I = 45A,
GS D
g
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
= 15V
DS
gs
40
gd
d(on)
r
t
t
t
t
35
V
= 15V, I = 45A,
D
=12V, R = 2.35Ω
DD
GS
160
78
V
G
ns
d(off)
f
26
L
+ L
Total Inductance
—
Measured from center of drain
pad to center of source pad
nH
S
D
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
V
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
1.15
1.05
0.95
175
500
—
T
T
T
= -55°C, I =45A, V
= 0V
= 0V
= 0V
SD
J
J
J
D
GS
V
= 25°C, I = 45A, V
D
GS
= 110°C, I =45A, V
D
GS
t
Reverse Recovery Time
—
nS
nC
nH
T = 25°C, I =45A, di/dt ≤ 100A/µs
j
F
V
rr
Q
Reverse Recovery Charge
—
≤ 30V
RR
DS
L
S
+ L Total Inductance
7.95
Measured from center of drain pad to
center of source pad (for Schottky only)
D
t
Forward Turn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L
S
on
D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
—
—
—
—
0.5
0.7
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
IRHSLNA57Z60
Radiation Characteristics
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
➀
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
30
2.0
—
—
4.0
30
1.5
—
—
4.0
100
-100
25
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
GS(th)
V
= V , I = 1.0mA
DS
D
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
V
GS
V
GS
= 20V
GSS
GSS
DSS
nA
—
—
= -20 V
—
—
µA
V
= 24V, V
=0V
DS
GS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
➀
—
4.0
—
5.0
mΩ
V
= 12V, I =45A
D
GS
DS(on)
DS(on)
SD
R
➀
—
—
4.0
1.3
—
—
4.5
1.3
mΩ
V
GS
= 12V, I =45A
D
V
➀
V
V
= 0V, I = 45A
GS S
1. Part numbers IRHSLNA57Z60, IRHSLNA53Z60 and IRHSLNA54Z60
2. Part number IRHSLNA58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area ➀
VDS (V)
Ion
LET
MeV/(mg/cm2))
37.9
Energy
(MeV)
255
290
313
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
33.4
28.8
26.5
30
25
22.5
30
25
22.5
30
20
15
25
15
10
20
10
—
59.4
80.3
35
30
25
20
15
10
5
Br
I
AU
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHSLNA57Z60
Pre-Irradiation
10000
VGS
1000
100
10
VGS
15V
TOP
15V
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
100
10
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
75A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
DS
V
GS
= 12V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0 8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
www.irf.com
IRHSLNA57Z60
Pre-Irradiation
20
16
12
8
I
D
= 45A
V
V
= 24V
= 15V
DS
DS
4
0
0
50
100
150
200
250
300
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Gate Charge Vs.
Gate-to-Source Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
.3µF
12V
Q
Q
G
+
12 V
V
DS
Q
D.U.T.
-
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 5b. Gate Charge Test Circuit
Fig 5a. Basic Gate Charge Waveform
www.irf.com
5
IRHSLNA57Z60
Pre-Irradiation
RD
200
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
150
100
50
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 7a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 6. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 7b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
6
www.irf.com
IRHSLNA57Z60
Pre-Irradiation
1200
1000
800
600
400
200
0
I
D
TOP
33.5A
47.4A
75A
BOTTOM
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 9. Maximum Avalanche Energy
Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
L
V
G
D S
D.U .T
AS
.
R
+
V
D D
-
I
A
V
2
GS
0.01
t
Ω
p
I
AS
Fig 9b. Unclamped Inductive Waveforms
Fig 9a. Unclamped Inductive Test Circuit
www.irf.com
7
IRHSLNA57Z60
Pre-Irradiation
MOSFET Body Diode & Schottky Diode Characteristics
100
10
1
Tj = 110°C
Tj = 25°C
Tj = -55°C
0.0
0.2
0.4
0.6
0.8
(V)
1.0
Forward Voltage Drop - V
SD
Fig. 10 - Typical Forward Voltage Drop Characterstics
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
8
www.irf.com
IRHSLNA57Z60
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature
➀ Total Dose Irradiation with V
Bias.
GS
= 0 during
12 volt V
applied and V
DS
GS
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ 50% Duty Cycle, Rectangular
irradiation per MIL-STD-750, method 1019, condition A.
➀ Total Dose Irradiation with V Bias.
DS
= 0 during
24 volt V
applied and V
GS
➀ V
= 25V, starting T = 25°C, L= 0.3 mH
J
DS
DD
Peak I = 75A, V
irradiation per MlL-STD-750, method 1019, condition A.
= 12V
L
GS
➀
Specified Radiation Characteristics are for
Radiation Hardened MOSFET die only.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2004
www.irf.com
9
相关型号:
IRHSLNA58Z60
Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
INFINEON
IRHSNA53064PBF
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
INFINEON
IRHSNA54064PBF
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明