IRHY54034CMPBF [INFINEON]

Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3;


型号：	IRHY54034CMPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 晶体晶体管开关脉冲局域网
文件：	总8页 (文件大小：134K)
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ꢁ

PD - 93825D

IRHY57034CM

JANSR2N7483T3

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

REF: MIL-PRF-19500/702

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHY57034CM 100K Rads (Si) 0.04Ω

IRHY53034CM 300K Rads (Si) 0.04Ω

IRHY54034CM 500K Rads (Si) 0.04Ω

QPL Part Number

18A* JANSR2N7483T3

18A* JANSF2N7483T3

18A* JANSG2N7483T3

IRHF58034CM 1000K Rads (Si) 0.048Ω 18A* JANSH2N7483T3

TO-257AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

Features:

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

18*

= 12V, T = 100°C Continuous Drain Current

18*

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

110

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

04/26/06

IRHY57034CM, JANSR2N7483T3

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

DSS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.057

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.04

Ω

= 12V, I = 18A

DS(on)

GS D

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

≥ 15V, I

= 18A Ã

=48V ,V =0V

DS GS

DSS

µA

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

6.8

100

-100

= 20V

GSS

= -20V

GSS

=12V, I = 18A

d(on)

GS D

= 30V

= 30V, I = 18A,

100

=12V, R = 7.5Ω

Turn-Off Delay Time

Fall Time

Total Inductance

d(off)

—

+ L

Measured from drain lead (6mm/

0.25in. from package) to source

lead (6mm/0.25in. from package)

Input Capacitance

—

1152

535

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

—

18*

1.2

T = 25°C, I = 18A, V

= 0V Ã

Reverse Recovery Time

T = 25°C, I = 18A, di/dt ≤100A/µs

Reverse Recovery Charge

322

≤ 25V Ã

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

—

1.67

thJC

thJA

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

IRHY57034CM, JANSR2N7483T3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Up to 500K Rads(Si)¹1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

2.0

—

4.0

—

4.0

= 0V, I = 1.0mA

DSS

1.5

—

= V , I = 1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

100

-100

= 20V

GSS

= -20 V

GSS

µA

=48V, V =0V

DSS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (TO-257AA)

Diode Forward Voltage

0.044

0.053

Ω

= 12V, I = 18A

DS(on)

—

0.04

—

0.048

Ω

= 12V, I = 18A

—

1.2

—

1.2

= 0V, I = 18A

1. Part numbers IRHY57034CM ( JANSR2N7483T3 ) , IRHY53034CM ( JANSF2N7483T3 ) and IRHY54034CM ( JANSG2N7483T3 )

2. Part number IRHY58034CM ( JANSH2N7483T3 )

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS (V)

Ion

LET

Energy

Range

(MeV/(mg/cm²)) (MeV)

(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V

37.3

86.6

285

300

2068

36.8

106

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHY57034CM, JANSR2N7483T3

Pre-Irradiation

1000

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

100

BOTTOM 5.0V

5.0V

20µs PULSE WIDTH

T = 25 C

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

2.5

2.0

1.5

1.0

0.5

0.0

22A

=18A

T = 25 C

T = 150 C

= 25V

20µs PULSE WIDTH

= 12V

11 13

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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Pre-Irradiation

IRHY57034CM, JANSR2N7483T3

2500

= 0V,

f = 1MHz

C SHORTED

18A

= 22A

= C + C

iss

gd ,

= 48V

= 30V

= 12V

= C

rss

= C + C

2000

1500

1000

500

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

T = 150 C

OPERATION IN THIS AREA

LIMITED BY R

(on)

100

T = 25 C

100µs

1ms

Tc = 25°C

Tj = 150°C

Single Pulse

10ms

= 0 V

1.2

0.1

0.4

0.6

0.8

1.0

1.4

100

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHY57034CM, JANSR2N7483T3

Pre-Irradiation

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHY57034CM, JANSR2N7483T3

200

150

100

TOP

8.0A

11.4A

BOTTOM 18A

15V

DRIVER

D.U.T

V_GS

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHY57034CM, JANSR2N7483T3

Footnotes:

Pre-Irradiation

Repetitive Rating; Pulse width limited by

maximum junction temperature.

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

= 0 during

Á V

= 50V, starting T = 25°C, L= 0.7 mH

Peak I =18A, V

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019, condition A.

=12V

Â I

≤ 18A, di/dt ≤ 234A/µs,

≤ 60V, T ≤ 150°C

Å Total Dose Irradiation with V

Bias.

= 0 during

48 volt V

applied and V

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — TO-257AA

PIN ASSIGNMENTS

1 = DRAIN

2 = SOURCE

3 = GATE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/2006

www.irf.com

IRHY54034CMPBF [INFINEON]

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