IRHY57034CMPBF [INFINEON]
Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3;型号: | IRHY57034CMPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 晶体 晶体管 开关 脉冲 局域网 |
文件: | 总8页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ꢁ
PD - 93825D
IRHY57034CM
JANSR2N7483T3
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/702
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
IRHY57034CM 100K Rads (Si) 0.04Ω
IRHY53034CM 300K Rads (Si) 0.04Ω
IRHY54034CM 500K Rads (Si) 0.04Ω
ID
QPL Part Number
18A* JANSR2N7483T3
18A* JANSF2N7483T3
18A* JANSG2N7483T3
IRHF58034CM 1000K Rads (Si) 0.048Ω 18A* JANSH2N7483T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
Features:
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
18*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
18*
72
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
110
18
GS
E
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
10
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/26/06
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
60
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.057
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.04
Ω
V
= 12V, I = 18A
DS(on)
GS D
Ã
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
16
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
≥ 15V, I
= 18A Ã
DS
V
DS
I
=48V ,V =0V
DS GS
DSS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
45
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
=12V, I = 18A
g
gs
gd
d(on)
r
GS D
10
V
= 30V
DS
15
t
t
t
t
25
V
= 30V, I = 18A,
DD
GS
D
100
35
V
=12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
Fall Time
Total Inductance
d(off)
30
—
f
L
+ L
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
—
—
—
1152
535
42
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
18*
72
1.2
99
S
A
SM
SD
V
T = 25°C, I = 18A, V
= 0V Ã
j
S
GS
Reverse Recovery Time
ns
T = 25°C, I = 18A, di/dt ≤100A/µs
j
rr
F
Q
Reverse Recovery Charge
322
nC
V
≤ 25V Ã
RR
DD
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
thJC
thJA
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57034CM, JANSR2N7483T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
60
2.0
—
—
—
—
—
4.0
60
—
4.0
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
1.5
—
—
—
—
= V , I = 1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
100
-100
25
V
= 20V
GSS
GS
GS
nA
V
= -20 V
GSS
I
µA
V
V
=48V, V =0V
GS
DSS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
Ã
0.044
0.053
Ω
= 12V, I = 18A
D
GS
R
DS(on)
Ã
—
0.04
—
0.048
Ω
V
= 12V, I = 18A
D
GS
V
SD
Ã
—
1.2
—
1.2
V
V
= 0V, I = 18A
S
GS
1. Part numbers IRHY57034CM ( JANSR2N7483T3 ) , IRHY53034CM ( JANSF2N7483T3 ) and IRHY54034CM ( JANSG2N7483T3 )
2. Part number IRHY58034CM ( JANSH2N7483T3 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br
Xe
Au
37.3
63
86.6
285
300
2068
36.8
29
106
60
46
35
60
46
35
60
35
27
60
25
20
40
15
14
70
60
50
40
30
20
10
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
0.1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
=18A
I
D
°
T = 25 C
J
°
T = 150 C
J
= 25V
V
DS
20µs PULSE WIDTH
V
= 12V
GS
1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY57034CM, JANSR2N7483T3
2500
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
18A
=
I
D
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
2000
1500
1000
500
0
oss
ds
C
iss
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
°
T = 150 C
OPERATION IN THIS AREA
J
LIMITED BY R
(on)
DS
100
10
1
°
T = 25 C
J
100µs
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
1.2
0.1
0.4
0.6
0.8
1.0
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
RD
35
VDS
LIMITED BY PACKAGE
30
VGS
D.U.T.
RG
+VDD
25
20
15
10
5
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY57034CM, JANSR2N7483T3
200
150
100
50
I
D
TOP
8.0A
11.4A
BOTTOM 18A
15V
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHY57034CM, JANSR2N7483T3
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á V
= 50V, starting T = 25°C, L= 0.7 mH
J
DD
Peak I =18A, V
12 volt V
applied and V
DS
GS
irradiation per MIL-STD-750, method 1019, condition A.
=12V
L
GS
 I
≤ 18A, di/dt ≤ 234A/µs,
≤ 60V, T ≤ 150°C
J
SD
DD
Å Total Dose Irradiation with V
Bias.
DS
= 0 during
V
48 volt V
applied and V
GS
DS
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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