IRHYB67134CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA); 抗辐射功率MOSFET直通孔（低电阻TO- 257AA ）
| 型号： | IRHYB67134CM |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96997
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67134CM
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYB67134CM 100K Rads (Si) 0.09Ω 19A
IRHYB63134CM 300K Rads (Si) 0.09Ω 19A
Low-Ohmic
TO-257AA (Tab-less)
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
19
12
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
76
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
±20
67
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
mJ
A
AS
I
19
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
7.8
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/09/05
IRHYB67134CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
150
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.19
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.09
Ω
V
= 12V, I = 12A Ã
DS(on)
GS D
2.0
12
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
DS
GS
D
Ω
g
= 15V, I
= 12A Ã
DS
I
= 120V ,V =0V
GS
DSS
µA
—
V
= 120V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
50
15
18
20
30
35
25
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 19A
g
gs
gd
d(on)
r
GS D
V
= 75V
DS
t
t
t
t
V
V
= 75V, I = 19A
=12V, R = 7.5Ω
DD
GS
D
G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1540
240
5.2
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
g
R
1.1
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
19
76
1.2
300
2.6
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 19A, V
= 0V Ã
j
S
GS
T = 25°C, I = 19A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHYB67134CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (Low Ohmic TO-257)
150
2.0
—
—
—
—
4.0
100
-100
10
V
GS
= 0V, I = 1.0mA
DSS
D
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
V
GS
= 20V
GSS
nA
µA
I
V
= -20V
GS
GSS
I
V
V
=120V, V =0V
GS
DSS
DS
GS
GS
R
DS(on)
—
0.092
Ω
= 12V, I = 12A
D
R
DS(on)
—
—
0.090
1.2
Ω
V
= 12V, I = 12A
D
V
SD
Diode Forward Voltage
V
V = 0V, I = 19A
GS
D
Part numbers IRHYB67134CM and IRHYB63134CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
Ion Xe
Ion Au
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
VGS Bias
VDS Bias
VGS Bias
VDS Bias
VGS Bias
VDS Bias
(Volts)
0
-5
-10
-15
-20
(Volts)
150
150
150
150
(Volts)
0
-5
(Volts)
150
150
150
140
50
(Volts)
0
-5
(Volts)
50
50
-9
-10
30
-10
-11
-15
150
40
180
150
120
90
Kr
Xe
Au
60
30
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHYB67134CM
Pre-Irradiation
1000
100
10
1000
VGS
VGS
15V
12V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
5.0V
60µs PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 19A
D
T
= 150°C
T
J
= 25°C
J
10
V
= 50V
DS
60µs PULSE WIDTH
V
= 12V
GS
1.0
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHYB67134CM
2800
20
16
12
8
100KHz
f = 1 MHz
V
= 0V,
= C
GS
V
= 120V
C
C
C
+ C , C
SHORTED
I
= 19A
DS
iss
gs
gd
ds
D
2400
2000
1600
1200
800
400
0
= C
V
= 75V
= 30V
rss
oss
gd
DS
= C + C
V
ds
gd
DS
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
Q
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T = 150°C
J
10
1
= 25°C
T
J
100µs
1ms
1
Tc = 25°C
Tj = 150°C
10ms
V
= 0V
GS
Single Pulse
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHYB67134CM
Pre-Irradiation
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
0.1
D = 0.50
0.20
0.10
P
DM
0.05
0.02
0.01
t
1
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHYB67134CM
120
100
80
60
40
20
0
I
D
15V
TOP
19A
12A
BOTTOM 8.5A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHYB67134CM
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L= 0.37mH
J
12 volt V
applied and V
DD
Peak I = 19A, V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
= 12V
L
GS
 I
≤ 19A, di/dt ≤ 570A/µs,
Å
Total Dose Irradiation with V
Bias.
SD
DD
DS
= 0 during
V
≤ 150V, T ≤ 150°C
120 volt V
applied and V
J
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions — Low-Ohmic TO-257AA (Tab-less)
10.66 [.420]
10.42 [.410]
5.08 [.200]
4.83 [.190]
A
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
0.13 [.005]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
B
A
NOT ES:
LEAD ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2005
8
www.irf.com
相关型号：
IRHYB67230CMPBF
Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN
INFINEON
IRHYB67230CMSCS
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QIRL
INFINEON
IRHYB67230CMSCV
Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
INFINEON
IRHYK57133CMSEPBF
Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-257AA, 3 PIN
INFINEON
IRHYS593034CMPBF
Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3
INFINEON
IRHYS597034CMPBF
Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明