IRHYS67130CA [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRHYS67130CA |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96986B
IRHYS67130CM
JANSR2N7588T3
100V, N-CHANNEL
REF: MIL-PRF-19500/755
TECHNOLOGY
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
R
6
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7588T3
JANSF2N7588T3
IRHYS67130CM 100 kRads(Si)
20A*
20A*
0.042
0.042
IRHYS63130CM
300 kRads(Si)
Description
Features
Low RDS(on)
IRHYS67130CM is part of the International Rectifier HiRel
family of products. IR HiRel R6 technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 90 (MeV/(mg/cm2). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
20*
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
19
80
75
0.6
A
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
107
VGS
EAS
IAR
mJ
A
20
7.5
mJ
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
5.5
V/ns
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
Weight
*Current is limited by package
For footnotes refer to the page 2.
1
2017-12-21
International Rectifier HiRel Products, Inc.
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max Units
100 ––– –––
Test Conditions
VGS = 0V, ID = 1.0mA
BVDSS
V
BVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.12 –––
V/°C Reference to 25°C, ID = 1.0mA
Static Drain-to-Source On-
––– ––– 0.042
Resistance
VGS = 12V, ID = 19A
VGS(th)
Gate Threshold Voltage
2.0
––– 4.0
V
VDS = VGS, ID = 1.0mA
VGS(th)/TJ
gfs
IDSS
Gate Threshold Voltage Coefficient
Forward Transconductance
––– -8.72 ––– mV/°C
14
––– –––
––– –––
––– –––
S
V
V
V
DS = 15V, ID = 19A
DS = 80V, VGS = 0V
DS = 80V,VGS = 0V,TJ =125°C
10
25
Zero Gate Voltage Drain Current
µA
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
––– ––– 100
––– ––– -100
VGS = 20V
GS = -20V
ID = 20A
nA
nC
V
QG
QGS
QGD
td(on)
tr
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
50
15
12
20
50
35
15
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 50V
VGS = 12V
VDD = 50V
ID = 20A
ns
td(off)
tf
RG = 7.5
VGS = 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internal-
ly bonded from Source pin to Drain pad
Ls +LD
Total Inductance
–––
6.8
–––
nH
Ciss
Coss
Crss
RG
Input Capacitance
––– 1710 –––
––– 343 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
–––
–––
6.5
1.1
–––
–––
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max Units
Test Conditions
IS
ISM
VSD
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– ––– 20*
A
––– –––
80
––– ––– 1.2
––– ––– 250
––– ––– 2.7
V
TJ= 25°C,IS = 20A, VGS= 0V
TJ = 25°C ,IF = 20A, VDD 25V
di/dt = 100A/µs
trr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
µC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Current is limited by package
Thermal Resistance
Parameter
Min.
–––
Typ.
–––
Max.
1.67
Units
Junction-to-Case
RJC
RJA
°C/W
Junction-to-Ambient (Typical Socket Mount)
–––
–––
80
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 0.54mH, Peak IL = 20A, VGS = 12V
ISD 20A, di/dt 575A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias: 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias: 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2017-12-21
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total
ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and
specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Up to 300 kRads (Si) 1
Parameter
Units
Test Conditions
Min.
100
2.0
Max.
–––
4.0
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
VGS = 20V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
–––
–––
–––
100
-100
10
nA
nA
µA
IGSS
VGS = -20V
IDSS
Zero Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (Low Ohmic TO-257AA)
Diode Forward Voltage
VDS = 80V, VGS = 0V
RDS(on)
–––
0.045
V
GS = 12V, ID = 19A
GS = 12V, ID = 19A
RDS(on)
VSD
–––
–––
0.042
1.2
V
V
VGS = 0V, ID = 20A
1. Part numbers IRHYS67130CM, JANSR2N7588T3 and IRHYS63130CM, JANSF2N7588T3
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
(MeV/(mg/cm2))
0V
-5V
-10V
-15V
-19V
-20V
39 ± 5%
61 ± 5%
90 ± 5%
315 ± 5%
345 ± 5%
375 ± 7.5%
40 ± 5%
32 ± 7.5%
29 ± 7.5%
100
100
100
100
100
100
100
100
–––
100
30
100
–––
–––
40
–––
–––
–––
120
100
80
60
40
20
0
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2017-12-21
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
1000
100
10
1000
100
10
VGS
15V
12V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
1
60s PULSE WIDTH
Tj = 150°C
60s PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
I
= 20A
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
V
= 12V
GS
6
s PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 4. Normalized On-Resistance Vs.
Fig 3. Typical Transfer Characteristics
Temperature
280
240
200
160
120
80
280
240
200
160
120
80
I
= 20A
D
T
= 150°C
J
T
T
= 150°C
= 25°C
J
T
= 25°C
J
J
40
40
V
= 12V
80
GS
0
0
4
8
12
16
20
24
0
20
40
60
100
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 6. Typical On-Resistance Vs Drain Current
Fig 5. Typical On-Resistance Vs Gate Voltage
4
International Rectifier HiRel Products, Inc. 2017-12-21
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
130
120
110
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
20
16
12
8
3000
2500
2000
1500
1000
500
V
C
= 0V,
f = 1 MHz
GS
V
V
V
= 80V
= 50V
= 20V
I
= 20A
DS
DS
DS
D
= C + C , C SHORTED
iss
gs gd ds
C
= C
gd
rss
C
= C + C
oss
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 17
rss
0
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
V
DS
Q
Total Gate Charge (nC)
G,
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
35
100
10
1
LIMITED BY PACKAGE
30
25
20
15
10
5
T
= 150°C
J
C
25°
=
T
J
V
= 0V
GS
0.1
0
25
50
T
75
100
125
°
( C)
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
, Case Temperature
C
V
, Source-to-Drain Voltage (V)
SD
Fig 12. Maximum Drain Current Vs.Case Temperature
International Rectifier HiRel Products, Inc. 2017-12-21
Fig 11. Typical Source-Drain Diode Forward Voltage
5
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
1000
100
10
200
160
120
80
I
D
OPERATION IN THIS AREA LIMITED
BY R (on)
TOP
9.0A
12.6A
BOTTOM 20A
DS
100 s
1ms
1
40
10ms
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
25
50
75
100
125
150
1
10
100
1000
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. Drain Current
10
1
D = 0.50
0.20
0.10
P
DM
0.1
t
1
0.05
t
2
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
International Rectifier HiRel Products, Inc.
2017-12-21
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Gate Charge Test Circuit
Fig 17a. Gate Charge Waveform
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
7
International Rectifier HiRel Products, Inc.
2017-12-21
IRHYS67130CM
JANSR2N7588T3
Pre-Irradiation
Case Outline and Dimensions - Low Ohmic - TO-257AA
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
www.infineon.com/irhirel
101 N. Sepulveda Boulevard, El Segundo, California 90245, USA Tel: +1 (310) 252-7105
2520 Junction Avenue, San Jose, California 95134, USA Tel: +1 (408) 434-5000
205 Crawford Street, Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
Data and specifications subject to change without notice.
8
International Rectifier HiRel Products, Inc.
2017-12-21
IRHYS67130CM
JANSR2N7588T3
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
9
International Rectifier HiRel Products, Inc.
2017-12-21
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