IRHYS67130CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA); 抗辐射功率MOSFET直通孔（低电阻TO- 257AA ）
| 型号： | IRHYS67130CM |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
| 文件： | 总8页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96986
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130CM
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYS67130CM 100K Rads (Si) 0.042Ω 20A*
IRHYS63130CM 300K Rads (Si) 0.042Ω 20A*
Low-Ohmic
TO-257AA
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
20*
19
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
80
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
±20
107
20
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05
IRHYS67130CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.12
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.042
Ω
V
= 12V, I = 19A Ã
D
DS(on)
GS
2.0
14
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
V
V
= 15V, I
= 19A Ã
DS
DS
I
= 80V ,V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
50
15
12
20
50
35
15
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 20A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
V
= 50V, I = 20A
=12V, R = 7.5Ω
DD
GS
D
G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1710
343
6.5
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
g
R
1.1
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
20*
80
1.2
250
2.7
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 20A, V
= 0V Ã
j
S
GS
T = 25°C, I = 20A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHYS67130CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (Low Ohmic TO-257)
100
2.0
—
—
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
V
GS
= 20V
GSS
nA
µA
V
GS
= -20V
GSS
I
V
= 80V, V =0V
GS
DSS
DS
GS
GS
R
DS(on)
—
0.044
Ω
V
= 12V, I = 19A
D
R
DS(on)
—
—
0.042
1.2
Ω
V
= 12V, I = 19A
D
V
Diode Forward Voltage
V
V
= 0V, I = 20A
D
GS
SD
Part numbers IRHYS67130CM and IRHYS63130CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
@VGS= @VGS=
@VGS= @VGS= @VGS= @VGS= @VGS=
(MeV/(mg/cm2))
(MeV)
(µm)
0V
-5V
-10V
-15V
-17V
-19V
-20V
Br
I
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
100
100
100
100
100
100
100
100
-
100
30
-
100
100
40
-
-
-
-
-
Au
-
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHYS67130CM
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
60µs PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 20A
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
s PULSE WIDTH
DS
0µ
V
= 12V
GS
6
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHYS67130CM
3000
20
16
12
8
f = 1 MHz
V
C
= 0V,
GS
V
V
V
= 80V
I
= 20A
DS
DS
DS
D
= C + C , C SHORTED
iss
gs gd ds
= 50V
C
= C
gd
2500
2000
1500
1000
500
rss
= 20V
C
= C + C
oss
ds
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
Q
20
Total Gate Charge (nC)
G,
30
40
50
60
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
T
= 25°C
100µs
J
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHYS67130CM
Pre-Irradiation
RD
35
VDS
LIMITED BY PACKAGE
VGS
30
25
20
15
10
5
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
P
DM
t
1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYS67130CM
200
160
120
80
I
D
15V
TOP
9.0A
12.6A
BOTTOM 20A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
40
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHYS67130CM
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L= 0.54mH
J
DD
Peak I = 20A, V
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
= 12V
L
GS
 I
≤ 20A, di/dt ≤ 575A/µs,
≤ 100V, T ≤ 150°C
J
SD
DD
Å Total Dose Irradiation with V
Bias.
DS
= 0 during
V
80 volt V
applied and V
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions — Low-Ohmic TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C A
B
NOT ES:
LEAD ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2005
8
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