IRHYS67130CMPBF [INFINEON]
Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3;
| 型号： | IRHYS67130CMPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3 |
| 文件： | 总9页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96986A
2N7588T3
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130CM
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYS67130CM 100K Rads (Si) 0.042Ω 20A*
IRHYS63130CM 300K Rads (Si) 0.042Ω 20A*
Low-Ohmic
TO-257AA
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
20*
19
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
80
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
107
20
GS
E
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
°C
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
06/16/10
IRHYS67130CM, 2N7588T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.12
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.042
Ω
V = 12V, I = 19A Ã
GS D
DS(on)
V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
2.0
—
14
—
—
-8.72
—
—
—
4.0
—
—
10
25
V
mV/°C
S
V
= V , I = 1.0mA
GS(th)
DS
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
V
= 10V, I
= 19A Ã
DS
I
Zero Gate Voltage Drain Current
= 80V ,V = 0V
GS
DSS
DS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
t
t
t
t
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
50
15
12
20
50
35
15
V
= 20V
= -20V
GSS
GSS
GS
nA
V
GS
V
= 12V, I = 20A
g
gs
gd
d(on)
r
GS D
nC
V
= 50V
DS
V
V
= 50V, I = 20A,
= 12V, R = 7.5Ω
DD
GS
D
G
ns
d(off)
f
L
+ L
—
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
nH
S
D
Ciss
Input Capacitance
—
—
—
1710
343
6.5
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
GS
DS
C
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
oss
rss
f = 1.0MHz, open drain
R
g
Ω
1.1
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
20*
80
1.2
250
2.7
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 20A, V
= 0V Ã
j
S
GS
T = 25°C, I = 20A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHYS67130CM, 2N7588T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
100
2.0
—
—
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
V
GS
= 20V
GSS
nA
µA
I
V
= -20V
GS
GSS
I
V
= 80V, V = 0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-3)
—
0.044
Ω
V
GS
= 12V, I = 19A
D
R
DS(on)
Static Drain-to-Source On-State
Resistance (Low Ohmic TO-257)
—
—
0.042
1.2
Ω
V
= 12V, I = 19A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 20A
GS
D
1. Part numbers IRHYS67130CM and IRHYS63130CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-5V
@VGS=
-10V
@VGS=
-15V
@VGS=
-19V
@VGS=
-20V
39 ± 5%
61 ± 5%
90 ± 5%
315 ± 5%
345 ± 5%
375 ± 7.5%
40 ± 5%
32 ± 7.5%
29 ± 7.5%
100
100
100
100
100
100
100
100
-
100
30
-
100
40
-
-
-
-
120
100
80
60
40
20
0
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHYS67130CM, 2N7588T3
Pre-Irradiation
1000
100
10
1000
VGS
VGS
15V
12V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 20A
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
s PULSE WIDTH
DS
V
= 12V
GS
0µ
6
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHYS67130CM, 2N7588T3
280
240
200
160
120
80
280
240
200
160
120
80
I
= 20A
D
T
= 150°C
J
T
T
= 150°C
= 25°C
J
T
= 25°C
J
J
40
40
V
= 12V
80
GS
0
0
4
8
12
16
20
24
0
20
40
60
100
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
130
120
110
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 1.0mA
D
I
= 50µA
D
D
D
D
I
I
I
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHYS67130CM, 2N7588T3
Pre-Irradiation
20
16
12
8
3000
2500
2000
1500
1000
500
f = 1 MHz
V
C
= 0V,
GS
V
V
V
= 80V
I
= 20A
DS
DS
DS
D
= C + C , C SHORTED
iss
gs gd ds
= 50V
= 20V
C
= C
gd
rss
C
= C + C
oss
ds
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 17
C
rss
0
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
Q
20
30
40
50
60
Total Gate Charge (nC)
V
G,
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
35
30
25
20
15
10
5
100
10
1
LIMITED BY PACKAGE
T
= 150°C
J
T
= 25°C
J
V
= 0V
GS
0.1
0
25
50
75
100
125
°
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T , Case Temperature ( C)
C
V
, Source-to-Drain Voltage (V)
SD
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
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Pre-Irradiation
IRHYS67130CM, 2N7588T3
200
160
120
80
1000
I
D
OPERATION IN THIS AREA LIMITED
BY R (on)
TOP
9.0A
12.6A
BOTTOM 20A
DS
100
10
1
100µs
1ms
40
10ms
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
10
1
D = 0.50
0.20
0.10
0.05
0.02
P
0.1
DM
t
1
0.01
SINGLE PULSE
t
2
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHYS67130CM, 2N7588T3
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
.
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHYS67130CM, 2N7588T3
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á V
= 25V, starting T = 25°C, L = 0.54mH
J
12 volt V
applied and V
DD
Peak I = 20A, V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
= 12V
L
GS
 I
≤ 20A, di/dt ≤ 575A/µs,
Å
Total Dose Irradiation with V
Bias.
SD
DD
DS
= 0 during
V
≤ 100V, T ≤ 150°C
80 volt V
applied and V
J
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions — Low-Ohmic TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C A
B
NOT ES:
LEAD ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/2010
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9
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