IRIS-A6331 [INFINEON]
INTEGRATED SWITCHER; 集成开关调节器
| 型号： | IRIS-A6331 |
| 厂家： | 
Infineon |
| 描述： | INTEGRATED SWITCHER |
| 文件： | 总7页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD 96935A
IRIS-A6331
Features
INTEGRATED SWITCHER
• Oscillator is provided on the monolithic control with adopting On-Chip-
Package Outline
Trimming technology.
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Various kinds of protection functions
8 Lead PDIP
Key Specifications
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
MOSFET
VDSS(V)
RDS(ON)
MAX
Pout(W)
Note 1
Type
ACinput(V)
IRIS-A6331
500
3.95
100/120 15%
10
Ω
±
Note1: The Pout (W) represents the thermal rating at PRC Operation,
and the peak power output is obtained by approximately 120 to 140%
of the above listed. When the output voltage is low and ON-duty is
narrow, the Pout (W) shall become lower than that of above.
Descriptions
IRIS-A6331 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type
SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC
realizes downsizing and standardizing of a power supply system reducing external components count and simplifying
theTciyrcpuiict daelsiCgnos.n(nNeotcet)i.oPRnCDisiaabgbrraevmiation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
IRIS-A6331
1
2
3
4
8
7
6
5
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IRIS-A6331
Absolute Maximum Ratings (Ta=25℃) (Refer Gnd 2 and 5)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Drain Current *1
Terminals Max. Ratings
Units
A
Note
Dpeak
I
8
3.54
Single Pulse
1-2
V =0.82V
DMAX
I
℃
Maximum switching current *5
8
3.54
A
Ta=-20~+125
Single Pulse
DD
V
=99V,L=20mH
AS
E
L
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
8-1
3-2
4-2
8-1
32
35
mJ
V
V
W
I =2.1A
Vin
Vth
6
D1
P
1.35
*6
Specified by
D2
×
P
3-2
0.14
W
Vin Iin
Refer to recommended
operating temperature
℃
℃
℃
℃
F
T
-
-
-
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Top
Tstg
Tch
Operating ambient temperature
Storage temperature
Channel temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
Fig.1
V1-2
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
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IRIS-A6331
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Ratings
Test
Symbol
Definition
MIN
15.8
9.1
-
TYP
17.6
10.1
-
MAX
19.4
11.1
5
Units
V
Conditions
→
Vin=0 19.4V
in(ON)
V
Operation start voltage
Vin=19.4 9.1V
→
in(OFF)
V
Operation stop voltage
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
O.C.P/F.B Pin threshold voltage
O.C.P/F.B Pin extraction current
O.V.P operation voltage
*7
V
in(ON)
I
mA
µA
µsec
V
mA
V
-
Vin=15V
in(OFF)
-
-
15
0.76
0.8
25.5
50
OFF(MAX)
T
12
18
-
-
-
Vth
0.7
0.7
23.2
0.82
0.9
OCP/FB
I
V
Vin=0 27.8V
→
in(OVP)
27.8
Vin=27.8
→
(Vin(OFF)-0.3)V
in(H)
I
Latch circuit sustaining current *8
Latch circuit release voltage *7,8
Thermal shutdown operating temperature
-
-
-
-
70
10.5
-
µA
V
℃
Vin=27.8 7.9V
→
in(La.OFF)
V
7.9
135
(TSD)
Tj
-
*7 The relation of Vin(OFF)＞Vin(La.OFF) is applied for each product.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Ratings
Symbol
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
500
-
TYP
MAX
-
Units
Test Conditions
ID=300µA
2- 1
V
=0V(short)
DSS
V
-
-
V
DS
V
=500V
=0V(short)
3- 2
2- 1
V
DSS
I
300
µA
V
=10V
D
Ω
I =0.4A
DS(ON)
R
On-resistance
Switching time
-
-
-
-
3.95
250
tf
nsec
-
Between channel and
internal frame
θ
ch-F
℃
Thermal resistance
*9
-
-
52
/W
*9 Internal frame temperature (TF) is measured at the root of the Pin 5.
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IRIS-A6331
IRIS-A6331
A.S.O. temperature derating coefficient curve
IRIS-A6331
Ta=25ºC
MOSFET A.S.O. Curve
ꢀ
Single Pulse
100
80
60
40
20
0
100
10
Drain current
limit by ON
resistance
0.1ms
1ms
1
0.1
0.01
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
20
40
60
80
100
120
1
10
100
1000
Internal frame temperature TF [
]
℃
Drain-to-Source Voltage VDS[V]
IRIS-A6331
IRIS-A6331
Avalanche energy derating curve
Maximum Switching current derating curve
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Ta= 20 +125
‐ ～
℃
100
80
60
40
20
0
4
3
2
1
0
0.8
0.9
1
1.1
1.2
25
50
75
100
125
150
V1-2 [V]
Channel temperature Tch [
]
℃
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IRIS-A6331
IRIS-A6331
IRIS-A6331
MOSFET Ta-PD1 Curve
F
D2
T -P Curve for Control IC
0.16
0.14
0.12
0.1
1.6
1.4
1.2
1
PD2=0.14[W]
PD1=1.35[W]
0.08
0.06
0.04
0.02
0
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100 120 140
0
20
40
60
80 100 120 140 160
Internal frame temperature TF[ ]
℃
Ambient temperature Ta[
]
℃
IRIS-A6331
Transient thermal resistance curve
10
1
0.1
0.01
1µ
10µ
100µ
1m
10m
100m
time t [sec]
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IRIS-A6331
Block Diagram
Vin
3
OVP
TSD
＋
－
UVLO
＋
－
REG
Latch
Delay
Internal Bias
＋
－
7,8
D
REG
PWM Latch
S Q
Drive
OSC
R
1
S
OCP Comp.
4
＋
－
OCP/FB
Icont
2,5
GND
Lead Assignments
Pin No.
Symbol
Description
Function
MOSFET source
Ground
Pin Assignment
(Top View)
1
2
3
S
Ground Pin
Source
GND
1
8
Drain
Drain
GND
Vin
Power supply Pin
Overcurrent / Feedback
Input of power supply for control circuit
Input of overcurrent detection
signal / constant voltage control signal
Ground
2
7
4
5
6
OCP/FB
GND
N.C.
Pin
Ground Pin
-
Vin
3
4
6
5
N.C.
OCP/FB
GND
Other Functio7n,8s
D
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
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IRIS-A6331
Case Outline
a. Type Number
b. Lot Number
1st letter：The last digit of year
8
1
7
6
5
4
2nd letter：Month
A6331
IR
a
b
c
(1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.)
3rd letter：Week
2
3
1～3 : Arabic numerals
c. Registration Number
Material of Pin : Cu
Treatment of Pin : Solder plating
Weight: Approx. 0.51g
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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