IRIS-A6159 [INFINEON]
INTEGRATED SWITCHER; 集成开关调节器
| 型号： | IRIS-A6159 |
| 厂家： | 
Infineon |
| 描述： | INTEGRATED SWITCHER |
| 文件： | 总7页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD 96934A
IRIS-A6159
INTEGRATED SWITCHER
Features
•Small sized 8-pin DIP type full molded package, optimum IC for low-
height SMPS
•Off-timer circuit is provided on the monolithic control IC
• Low start-up circuit current (10uA typ)
Package Outline
•Low circuit current at operation (1.5mA typ)
• Avalanche energy guaranteed MOSFET with high VDSS
ꢀ
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
ꢀ
No VDSS de-rating is required.
•Built-in Start-up circuit (the power loss in the start-up circuit is
reduced by cutting off the start-up circuit after the IC starts its
operation.)
•Auto Burst Stand-by (realizing input power<0.1W at no load)
•Auto Bias Function (stable burst operation without the interference on
transformer)
•Two operational modes by auto switching functions
ꢀ For normal operation: PRC mode
ꢀ For stand-by operation (at light load): Burst mode
•Built-in Leading Edge Blanking Function
•Built-in constant voltage drive circuit
8 Lead PDIP
Key Specifications
•Various kinds of protection functions
MOSFET
VDSS(V)
RDS(ON)
MAX
Pout(W)
Note 1
ꢀ
ꢀ
ꢀ
ꢀ
Pulse-by-pulse Overcurrent Protection (OCP)
Overload Protection with auto recovery (OLP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
Type
ACinput(V)
230±15%
85 to 264
7
5
IRIS-A6159
650
6Ω
Descriptions
IRIS-A6159 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC
fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC
operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply
system reducing external component count and simplifying the circuit design.
Note: PRC is abbreviation for “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
8
7
6
5
Startup
D
D
NC
IRIS-A6159
OCP Vcc GND FB
1
2
3
4
Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by
approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the
Pout (W) shall become lower than that of above value.
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IRIS-A6159
Absolute Maximum Ratings (Ta=25℃)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Drain Current *1
Terminals Max. Ratings
Units
A
Note
Dpeak
I
8-3
1.8
Single Pulse
1-3
V =0.86V
DMAX
I
℃
Maximum switching current
8-3
1.8
A
Ta=-20~+125
Single Pulse
DD
V
=99V,L=20mH
AS
E
L
Single pulse avalanche energy *2
O.C.P. pin Voltage
8-3
1-3
24
-0.5~6
mJ
V
I =1.8A
VOCP
Input voltage for control part
F.B/O.L.P pin voltage
Startup pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
2-3
4-3
5-3
8-3
35
V
V
V
VCC
VFB/OLP
Vstartup
-0.5~10
-0.3~600
1.35
D1
P
W
*5
Specified by
×
Vcc ICC
Refer to recommended
operating temperature
D2
P
2-3
0.15
W
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
℃
℃
℃
℃
F
T
-
-
-
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Top
Tstg
Tch
*1 Refer to MOSFET A.S.O curve
*2 Refer to MOSFET Tch-EAS curve
*3 Refer to MOSFET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC
*5 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
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IRIS-A6159
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
Ratings
Test
Symbol
Definition
MIN
TYP
MAX
Units
Conditions
VCC=0 19.2V
→
Operation start voltage
16
17.5
19.2
V
VCC(ON)
VCC=19.2 9V
→
Operation stop voltage
9
-
-
10
-
-
11
4
50
V
mA
µA
V
VCC(OFF)
ICC(ON)
ICC(OFF)
VCC(bias)
Circuit current in operation
Circuit current in non-operation
Auto bias threshold voltage
-
VCC=14V
VCC=20 9.6V
→
9.6
10.6
11.6
-
Vcc(bias) - Vcc(OFF)
Maximum OFF time
O.C.P. threshold voltage
0.2
7.3
0.69
-
8
0.77
-
V
µsec
V
-
-
-
OFF(MAX)
T
8.7
0.86
VOCP
Tbw Leading edge blanking time
200
0.7
6.5
18
227
340
-
28.7
-
6.6
320
0.79
7.2
26
300
790
-
31.2
-
7.3
480
0.88
7.9
35
388
1230
30
34.1
200
8
-
nsec
V
-
-
-
-
-
Vburst Burst threshold voltage
O.L.P. threshold voltage
Out-flow current at O.L.P operation
Maximum F.B. current
V
VOLP
I
IFB(MAX)
OLP
µA
µA
µA
µA
V
VCC=15V
Startup current
IST ART UP
Startup circuit leakage current
O.V.P operation voltage
Latch circuit sustaining current *6
Latch circuit release voltage *6
-
ISTART(leak)
VCC(OVP)
ICC(H)
VCC=0→34.1V
VCC=34.1
VCC=34.1
µA
V
→8.5V
V
→6.6
VCC(La.OFF)
℃
(TSD)
Tj
Thermal shutdown operating temperature
135
-
-
*6 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Ratings
TYP
Symbol
Definition
MIN
MAX
Units
Test Conditions
ID=300µA
- 3
V1 =0V(short)
DSS
V
Drain-to-Source breakdown voltage
650
-
-
V
DS
V
=650V
- 3
V1 =0V(short)
DSS
I
Drain leakage current
On-resistance
-
-
-
-
-
-
300
6
µA
Ω
D
I =0.4A
DS(ON)
R
tf
Switching time
250
nsec
-
Between channel and
internal frame
θch-F
℃
Thermal resistance
*7
-
-
52
/W
*7 Internal frame temperature (TF) is measured at the root of the Pin 3.
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IRIS-A6159
IRIS-A6159
A.S.O. temperature derating coefficient curve
IRIS-A6159
MOSFETꢀA.S.O. Curve
Ta=25ºC
Single Pulse
100
80
60
40
20
0
100
10
Drain current
limit by ON
resistance
0.1ms
1ms
1
0.1
0.01
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
20
40
60
80
100 120
1
10
100
1000
Internal frame temperature TF [℃]
Drain-to-Source Voltage VDS[V]
IRIS-A6159
Avalanche energy derating curve
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature Tch [℃]
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IRIS-A6159
IRIS-A6159
MOSFET Ta-PD1 Curve
IRIS-A6159
MIC TF-PD2 Curve
1.6
1.4
1.2
1
0.16
0.14
0.12
0.1
PD1=1.35[W]
PD2=0.15[W]
0.8
0.6
0.4
0.2
0
0.08
0.06
0.04
0.02
0
0
20 40 60 80 100 120 140 160
0
20
40
60
80 100 120 140
Ambient temperature Ta[℃]
Internal frame temperature TF[℃]
IRIS-A6159
Transient thermal resistance curve
10
1
0.1
0.01
1µ
10µ
100µ
1m
10m
100m
time t [sec]
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IRIS-A6159
Block Diagram
Vcc
2
Startup
5
OVP
＋
－
UVLO
Internal
Bias
＋
－
Latch
Delay
TSD
8
7
D
D
Power
MOS FET
Drive
OFF Timer
PWM Latch
＋
－
OLP
＋
－
S Q
R
Bias
－
＋
Burst
＋
－
Blanking
OCP
Discharge
FB
－
＋
＋
－
1 Source/OCP
Buffer
3
GND
4
FB/OLP
Lead Assignments
Pin No.
Symbol
S/OCP
VCC
Description
Source Pin/OCP
Power supply Pin
Function
Pin Assignment
(Top View)
1
2
3
MOSFET source / Over current Protection
Input of power supply for control circuit
S/OCP
VCC
1
8
Drain
Drain
GND
Ground Pin
Ground
Input of constant voltage control signal/over
load protection signal
Input of Startup current
Not Connected
2
7
4
5
6
7
8
FB/OLP
Startup
N.C.
Drain
Drain
Feedback/OLP pin
Startup pin
-
3
4
6
5
N.C.
GND
FB/OLP
Startup
Drain Pin
Drain Pin
MOSFET drain
MOSFET drain
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
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IRIS-A6159
Case Outline
a. Type Number
b. Lot Number
1st letter：The last digit of year
8
1
7
6
5
4
2nd letter：Month
A6159
IR
a
b
c
(1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.)
3rd letter：Week
2
3
1～3 : Arabic numerals
c. Registration Number
Material of Pin : Cu
Treatment of Pin : Solder plating
Weight: Approx. 0.51g
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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