IRIS-F6426S [INFINEON]
INTEGRATED SWITCHER; 集成开关调节器
| 型号： | IRIS-F6426S |
| 厂家： | 
Infineon |
| 描述： | INTEGRATED SWITCHER |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRIS-F6426S
INTEGRATED SWITCHER
Features
• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Package Outline
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PRC mode (≒20kHz)
• Various kinds of protection functions
TO-247 Fullpack (5 Lead)
Key Specifications
• Pulse-by-pulse Overcurrent Protection (OCP)
MOSFET
VDSS(V)
RDS(ON)
MAX
Pout(W)
Note 1
Type
AC input(V)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
Descriptions
100±15%
120 15%
±
145
190
0.58Ω
IRIS-F6426S
450
IRIS-F6426S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant
(including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing
external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio
Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-F6400
GND
Vin
D
S
OCP/FB
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IRIS-F6426S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Drain Current *1
Terminals Max. Ratings Units
Note
Dpeak
I
3-2
16
A
Single Pulse
2-5
V =0.78V
DMAX
I
℃
Maximum switching current *5
3-2
16
A
Ta=-20~+125
Single Pulse
AS
L peak
E
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
3-2
4-5
1-5
327
35
6
mJ
V
I
=6.7A
Vin
Vth
V
52
2.8
W
W
With infintite heatsink
Without heatsink
Specified by
×
Vin Iin
Refer to recommended
operating temperature
D1
P
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
3-2
4-5
D2
P
0.49
W
℃
℃
℃
℃
F
T
-
-
-
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
Top
Tstg
Tch
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
Fig.1
V2-5
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V2-5 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
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IRIS-F6426S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)
Ratings
Test
Symbol
Definition
MIN
TYP
MAX
17.6
11
Units
V
Conditions
→17.6
Vin=0
Vin=17.6 9V
→
V
in(ON)
V
Operation start voltage
14.4
16
10
-
-
-
in(OFF)
V
Operation stop voltage
9
-
-
V
in(ON)
I
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
20
mA
µA
µsec
-
Vin=14V
in(OFF)
I
100
55
OFF(MAX)
T
45
-
Minimum time for input of quasi
Tth(2) resonant signals
*6
*7
-
-
-
-
1
2
µsec
µsec
V
-
-
-
OFF(MIN)
T
Minimum OFF time
Vth(1) O.C.P/F.B Pin threshold voltage 1
Vth(2) O.C.P/F.B Pin threshold voltage 2
OCP/FB
0.68
1.3
1.2
20.5
-
0.73
1.45
1.35
22.5
-
0.78
1.6
1.5
24.5
400
8.4
-
V
I
O.C.P/F.B Pin extraction current
O.V.P operation voltage
mA
V
-
→24.5
Vin=0
V
in(OVP)
in(H)
I
V
Vin=24.5
Vin=24.5
Latch circuit sustaining current *8
Latch circuit release voltage *8
µA
→8.5V
→6.6V
in(La.OFF)
V
6.6
140
-
-
V
℃
(TSD)
Tj
Thermal shutdown operating temperature
*6 Refer to Recommended operating conditions
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Ratings
Symbol
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
450
-
TYP
MAX
-
Units
V
Test Conditions
ID=300µA
- 2
V5 =0V(short)
DSS
V
-
-
DS
V
=450V
V5-2=0V(s hort)
V5-2=10V
DSS
I
300
µA
D
Ω
I =3.3A
DS(ON)
R
On-resistance
Switching time
-
-
-
-
0.58
250
tf
nsec
-
Between channel and
internal frame
θ
ch-F
℃
Thermal resistance
-
-
1.1
/W
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IRIS-F6426S
IRIS-F6426S
MOSFETꢀA.S.O. Curve
IRIS-F6426S
A.S.O. temperature derating coefficient curve
100
10
100
80
60
40
20
0
Drain current
limit by ON
resistance
0.1ms
1ms
1
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0.1
0.01
0
20
40
60
80
100
120
1
10
100
1000
Drain-to-SourceVoltage VDS[V ]
Internal frame temperature TF [℃]
IRIS-F6426S
Maximum Switching current derating curve
IRIS-F6426S
Avalanche energy derating curve
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Ta=‐20～+125℃
18.0
100
80
60
40
20
0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
0.70
0.80
0.90
1.00
1.10
1.20
Channel temperature Tch [℃ ]
V2-5 [V]
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IRIS-F6426S
IRIS-F6426S
MOSFET Ta-PD1 Curve
IRIS-F6426S
MIC TF-PD2 Curve
0.6
0.5
0.4
0.3
0.2
0.1
0
60
50
40
30
20
10
0
PD1=52[W]
PD2=0.49[W]
With infinite
heatsink
Without
heatsink
PD1=2.8[W]
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Internal frame temperature TF[℃]
Ambient temperature Ta[℃]
IRIS-F6426S
Transient thermal resistance curve
10
1
0.1
0.01
0.001
1µ
10µ
100µ
1m
10m
100m
timet [sec]
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IRIS-F6426S
Block Diagram
4 Vin
3
D
LATCH
START
REG.
O.V.P.
DRIVE
2
S
T.S.D
Vth(1)
1
OCP/FB
-
+
O.S.C
Vth(2)
-
+
5
GND
Lead Assignments
Pin No.
Symbol
Description
Function
Overcurrent / Feedback
Pin
Input of overcurrent detection
signal / constant voltage control signal
MOSFET source
1
2
3
4
5
OCP/FB
S
Source Pin
D
Drain Pin
MOSFET drain
Input of power supply for control circuit
Ground
Vin
Power supply Pin
Ground Pin
GND
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
STEP DRV – 2 step drive circuit
OCP/FB
S
D
Vin
GND
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IRIS-F6426S
Case Outline
55..55±0.2
55..55
33..4455±0.2
33..4455
φ3.2 ±0.2
IRIS
33..3355±0.1
33..3355
IR
RR--eenndd
RR--eenndd
a：Type Number F6426S
b：Lot Number
++00..22
++00..22
11..3355
11..3355
--00..11
--00..11
RR--eenndd
RR--eenndd
22--((RR11..33))
22--((RR11..33))
++00..22
++00..22
11..7755
11..7755
--00..11
--00..11
1st letter：The last digit of year
2nd letter：Month
++00..22
++00..22
00..6655
00..6655
--00..11
--00..11
++00..22
++00..22
00..8855
00..8855
--00..11
--00..11
1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for
Dec.
4xP2.54±0.1=(10.16)
44..55±0.7
44..55
3rd & 4th letter：Day
Arabic Numerals
1155..66±0.2
1155..66
Weight : Approx. 7.5g
Dimensions in mm
DWG.No.：4B-E01515A
00..55
00..55
00..55
00..55
11 22 33 44 55
11 22 33 44 55
Material of Pin : Cu
Treatment of Pin : Ni plating + solder dip
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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