IRIS-X6757 [INFINEON]
INTEGRATED SWITCHER; 集成开关调节器型号: | IRIS-X6757 |
厂家: | Infineon |
描述: | INTEGRATED SWITCHER |
文件: | 总9页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRIS-X6757
Package Outline
INTEGRATED SWITCHER
Features
• 7-pin SIP type full molded package, optimum IC for low-height SMPS.
• Oscillator is provided on the monolithic control with adopting On-Chip
Trimming Technology
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
ꢀ The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
ꢀ No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode ( 22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
ꢀ For middle~heavy load operation : QR mode
ꢀ For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
TO-220 Fullpack (7 Lead)
Key Specifications
ꢀ Pulse-by-Pulse Overcurrent Protection (OCP)
ꢀ Overvoltage Protection with Latch mode (OVP)
MOSFET RDS(ON)
Pout(W)
Note 1
300
180
Type
IRIS-X6757
VDSS(V)
MAX
AC input(V)
230 15%
85 to 264
ꢀ Overload Protection with Latch mode (OLP)
ꢀ The maximum limit of on-time
650
Description
IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM)
fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and
standardizing of a power supply system reducing external component count and simplifying the circuit design.
Typical Connection Diagram
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Note 1:
The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to
140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that
of the above.
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IRIS-X6757
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Max.
Symbol
Definition
Drain Current * 1
Terminals
Ratings
Units
Note
Single Pulse
Dpeak
I
1 - 3
18
IDMAX Maximum switching current *2
1 - 3
1 - 3
18
A
Ta=-20~+125
Single Pulse
EAS
Single pulse avalanche energy *3
Input voltage for control part
326
mJ
DD
=30V,L=50mH
L
I =3.53A
Vcc
4 - 3
5 - 3
6- 3
6- 3
7- 3
35
-0.5 ~ 6.0
10
-0.5 ~ 9.0
-1.5 ~ 5.0
44
V
mA
V
VSSOLP SS/OLP pin voltage
IFB
VFB
FB pin inflow current
FB pin voltage
within the limits of IFB
With infinite heatsink
Without heatsink
Specified by Vcc x
Icc
Refer to recommended
operating temperature
V
VOCPBD O.C.P/F.B pin voltage
PD1
Power dissipation of MOSFET *4
1 - 3
4 - 3
-
W
W
2.8
Power dissipation for control part
(MIC) *5
D2
P
0.8
Internal frame temperature in
operation
F
T
-20 ~ +125
Operating ambient temperature
Storage temperature
Channel temperature
To
Tstg
Tch
-
-
-
-20 ~ +125
-40 ~ +125
150
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve
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IRIS-X6757
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25 , Vin=20V,unless otherwise specified)
Ratings
Symbol
Definition
Terminals
Units
Note
M I N
T Y P
M A X
Power Supply Start-up Operation
VCC(ON)
VCC(OFF)
ICC(ON)
Operation Start Voltage
4 - 3
4 - 3
4 - 3
4 - 3
1 - 2
5 - 3
5 - 3
16.3
8.8
-
18.2
9.7
-
19.9
10.6
6
V
V
Vcc=0 20V
Operation Stop Voltage
Vcc=20 8.8V
Circuit Current in Operation
Circuit Current in Non-Operation
Oscillation Frequency
mA
µA
kHz
V
-
ICC(OFF)
fosc
-
-
100
25
Vcc=15V
19
22
-
-
-
VSSOLP(SS)
ISSOLP(SS)
Soft Start Operation Stop Voltage
Soft Start Operation Charging Current
1.1
-710
1.2
-550
1.4
-390
µA
Normal Operation
VOCPBD(BS1)
VOCPBD(BS2)
VOCPBD(LIM)
IOCPBD
Bottom-Skip Operation Threshold Voltage1
Bottom-Skip Operation Threshold Voltage2
Overcurrent Detection Threshold Voltage
OCP/BD Pin Outflow Current
7 - 3
7 - 3
7 - 3
7 - 3
7 - 3
7 - 3
6 - 3
6 - 3
-0.72
-0.485
-0.995
-250
0.28
-0.665
-0.435
-0.94
-100
0.4
-0.605
-0.385
-0.895
-40
V
V
-
-
-
-
-
-
-
-
V
µA
V
VOCPBD(TH1)
VOCPBD(TH2)
VFB(OFF)
Quasi-Resonant Operation Threshold Voltage 1
Quasi-Resonant Operation Threshold Voltage 2
FB Pin Threshold Voltage
0.52
0.67
0.8
0.93
V
1.32
1.45
1000
1.58
V
IFB(ON)
FB Pin Inflow Current (Normal Operation)
600
1400
µA
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IRIS-X6757
Electrical Characteristics (for Control IC), Contd.
Stand-by Operation
VCC(S)
Stand-by Operation Start Voltage
4 - 3
4 - 3
10.3
1.1
11.1
1.35
12.1
1.65
V
V
Vcc=0 15V
-
VCC(SK)
Stand-by Operation Start Voltage Interval
ICC(S)
IFB(S)
Stand-by Non-Operation Circuit Current
FB Pin Inflow Current (Stand-by)
4 - 3
6 - 3
-
-
20
4
56
14
µA
µA
Vcc=10.2V
Vcc=10.2V
Stand-by Operation FB Pin Threshold
Voltage
VFB(S)
6 - 3
1 - 2
0.55
0.65
1.1
1
1.5
V
Vcc=15V
-
TON(MIN)
Minimum ON Time
1.35
µSec
Protection Operation
TON(MAX)
VSSOLP(OLP)
ISSOLP(OLP)
VCC(OVP)
Maximum ON Time
1 - 3
5 - 3
5 - 3
4 - 3
27.5
4
32.5
4.9
39
5.8
-6
µSec
V
-
-
-
OLP Operation Threshold Voltage
OLP Operation Charging Current
OVP Operation Voltage
-16
25.5
-11
µA
V
27.7
29.9
Vcc=0→30V
Vcc=30→
VCC(OFF)-0.3V
ICC(H)
µA
V
Latch Circuit Holding Current *5
Latch Circuit Release Voltage *5
4 - 3
4 - 3
--
6
45
140
8.5
VCC(La.OFF)
7.2
Vcc=30→6V
*5 The latch circuit means a circuit operated O.V.P and O.L.P.
*6 The current ratings are based on those of the IC , and plus(+) represents sink and minas(-) represents source.
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IRIS-X6757
Electrical characteristics for MOSFET (Ta=25 deg C)
Ratings
Symbol
Definition
Terminals
Units
Note
MIN
TYP
MAX
ID=300µA
VDS=650V
ID=3.4A
-
VDSS
Drain-to-Source breakdown voltage
Drain leakage current
On-resistance
1 - 2
1 - 2
1 - 2
1 - 2
650
-
-
-
-
-
V
IDSS
RDS(ON)
tf
-
-
-
300
0.62
500
µA
Switching time
nSec
/W
Between channel
and internal frame
ch-F
Thermal resistance
-
-
-
1.09
IRIS-X6757
A.S.O. temperature derating coefficient curve
IRIS-X6757
MOSFET A.S.O. Curve
100
10
100
80
Drain current
limit by ON
resistance
0.1ms
1ms
60
1
40
0.1
0.01
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
20
0
0
20
40
60
80
100
120
1
10
100
1000
Drain-to-Source Voltage VDS[V]
Internal frame temperature TF [
]
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IRIS-X6757
IRIS-X6757
Avalanche energy derating curve
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature Tch [
]
IRIS-X6757
MOSFET Ta-PD1 Curve
50
45
40
35
30
25
20
15
10
5
PD1=44[W]
With infinite
heatsink
Without
heatsink
PD1=2.8[W]
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta[
]
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IRIS-W6753
IRIS-X 6757
M IC TF-PD2 Curve
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100 120 140 160
Internal frame temperature TF[
]
IRIS-X6757
Transient thermal resistance curve
1
0.1
0.01
0.001
1µ
10µ
100µ
1m
10m
100m
time t [sec]
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IRIS-X6757
Block Diagram
VCC
D
S
DRIVE
Reg
Protection
latch
Reg&
Iconst
R
Q
S
Delay
Burst
Control
Start
Stop
Burst
OVP
GND
FB
FB
Q
S
R
S
Q
R
OCP
OSC
MaxON
BSD
BD
OCP/BD
SS/OLP
Bottom Selector
OLP
Soft Start
Counter
Pin Designation
Pin
No.
Symbols
Descriptions
Functions
Pin Assignments
1
3
D
Drain pin
MOSFET drain
S/GND
Source /Ground pin
MOSFET Source / Ground
Input of power supply for control
circuit
4
5
VCC
Power supply pin
Delay at Overload
/Soft Start set up Pin
Overload Protection and
Soft Start Operation Time set up
SS/OLP
Constant Voltage Control Signal
Input, Burst(intermittent) mode
Oscillation Control
6
7
FB
Feedback pin
ꢀ
ꢀꢀ
ꢀꢀ
ꢀ
Overcurrent Protection
Input
/ Bottom Detection Pin
Overcurrent Detection Signal Input
/Bottom Detection Signal Input
ꢀ
OCP/BD
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IRIS-X6757
Case Outline
ꢀ
ꢀ
a
Type Number W6753
Lot Number
ꢀ
b
1st letter The last digit of year
2nd letter Month
ꢀ
1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.
3rd & 4th letter Day
Arabic Numerals
Weight : Approx. 2.3g
Dimensions in mm
DWG.No. TG3A-2103
ꢀ
ꢀ
ꢀ
ꢀ
Material of Pin : Cu
ꢀ
Treatment of Pin : Ni plating + solder dip
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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