IRIS4015PBF [INFINEON]
Switching Regulator, Current-mode, 21A, PSFM5, TO-220, 5 PIN;型号: | IRIS4015PBF |
厂家: | Infineon |
描述: | Switching Regulator, Current-mode, 21A, PSFM5, TO-220, 5 PIN 稳压器 开关式稳压器或控制器 调节器 电源电路 开关式控制器 |
文件: | 总6页 (文件大小:65K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data SheetNo. PD60190-C
( )
IRIS4015 K
INTEGRATED SWITCHER
Features
• Primary current mode control, and secondary
voltage mode control
Packages
•
•
Vcc Over-voltage protection (latched)
Over-current & over-temperature protection
• Quasi resonant, variable frequency operation
•
•
•
5 pinTO-220 andTO-262 package
0.97Ω Rds(on) max/ 650V MOSFET
Fully Characterized Avalanche Energy
IRIS4015
IRIS4015K
5 Lead TO-220
5 LeadTO-262
Descriptions
The IRIS4015(K) is a dual mode voltage and current controller combined with a MOSFET in a single package.
The IRIS4015(K) is designed for use in AC/DC switching power supplies up to 230VAC nominal input, and is
capable of 180W for a universal line input.The device operates on a quasi-resonant or Pulse Ratio Control (PRC)
basis, and thereby variable frequency operation.
Typical Connection Diagram
Vin
(AC/
DC)
Vout
(DC)
3
Drain
4
5
Vcc
IRIS4015(K)
FB
Gnd
Source
1
2
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show electrical
connections only. Please refer to our DesignTips
and Application Notes (AN1018a, AN1024a,
AN1025) for proper circuit board layout.
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1
( )
IRIS4015 K
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition
Terminals Max. Ratings Units
Note
IDpeak
Peak drain current
3-1
21
Single pulse
IDmax
Maximum switching current
3-1
8
A
V
= 0.78V
2-3
Ta=-20 - +125oC
EAS
Single pulse avalanche energy
3-1
325
mJ
single pulse
ILpeak=5.7A
VCC
VTH
Power supply voltage
4-3
5-2
35
6
V
W
OCP/FB terminal voltage
Power dissipation for MOSFET
P
235
With infinite heatsink
Without heatsink
D1
3-1
1.2
P
Power dissipation for control part (MIC)
Thermal resistance, junction to case
Junction temperature
4-2
—
—
—
—
0.8
Specified by VIN x IIN
D2
Rth
0.53
°C/W
JC
T
T
T
-40-125
-40-125
-20-125
J
Storage temperature
S
Internal frame temperature in operation
Refertorecommended
operating temperature
°C
f
T
Ambient operating temperature
—
—
-20-125
300
OP
T
Lead temp. (soldering, 10 seconds)
L
Recommended Operating Conditions
Time for input of quasi resonant signals.
Tth(2)≥1.0µs
For the Quasi resonant signal inputted to the VOCP/FB
terminal at the time of quasi resonant operation, the
signal should be wider thantTth(2)
VOCP/FB
Vth(2)
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2
( )
IRIS4015 K
Electrical Characteristics (for Control Part (MIC))
V
= 18V, (T = 25°C) unless otherwise specified.
A
CC
Symbol
VCCUV+
VCCHYS
IQCCUV
IQCC
Definition
Min. Typ. Max. Units Test Conditions
VCC supply undervoltage positive going threshold
VCC supply undervoltage lockout hysteresis
UVLO mode quiescent current
14.4
5.4
—
16
6.0
—
—
—
—
—
17.6
6.6
100
30
V
µA
VCC < VCCUV-
Quiescent operatingVCC supply current
Maximum OFF time
—
mA
TOFF(MAX)
TTH(2)
TOFF(MIN)
VTH(1)
40
60
µsec
Minimum input pulse width for quasi resonant signals
Minimum OFF time
—
1.0
1.5
—
OCP/FB terminal threshold voltage 1
OCP/FB terminal threshold voltage 2
OCP/FB terminal sink current
0.68
1.3
1.1
20.5
—
0.73 0.78
V
VTH(2)
1.45
1.35
1.6
1.7
IOCP/FB
VCC(OVP)
IIN(H)
mA
V
VCC overvoltage protection limit
Latch circuit sustaining current
22.5 24.5
—
—
—
400
8.4
—
µA
VIN(LaOFF)
TJ(TSD)
Latch circuit reset voltage
6.6
140
V
oC
Thermal shutdown activation temperature
Electrical Characteristics (for MOSFET)
(T = 25°C) unless otherwise specified.
A
Symbol
VDSS
Definition
Drain-to-source breakdown voltage
Drain leakage current
Min. Typ. Max. Units Test Conditions
650
—
—
—
—
—
25
V
µA
Ω
IDSS
Vds=650V, VGS=0V
V3-1=10V, ID=8.8A
RDS(ON)
On-resistance
—
0.97
t
Rise time (10% to 90%)
Thermal resistance
—
—
—
—
310
ns
oC/W
r
0.53
Between junction
and case
THj-C
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3
( )
IRIS4015 K
Block Diagram
4
Vcc
1
D
START
REG.
O.V.P
LATCH
DRIVE
2
S
-
Vth(1)
OSCILLATOR
T.S.D
+
5
Comp.1
OCP/
FB
-
Vth(2)
+
Comp.2
3
Ground
Pin # Symbol
Description
Lead Assignments
1
2
3
4
S
Ground
D
MOSFET Source terminal
Ground terminal
MOSFET Drain terminal
Control circuit supply voltage
Vcc
1
2
3
4
5
Overcurrent detection, and Voltage mode control
feedback signal
5
OCP/FB
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
5/4/2001
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4
( )
IRIS4015 K
Case outline
01-6020 00
01-3042 01 (TS-001)
5-Lead TO-220
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5
( )
IRIS4015 K
Case outline
B
4.83 [.190]
4.06 [.160]
10.29 [.405]
1.40 [.055]
9.65 [.380]
MAX.
6.22[.245]
MIN
1.32 [.052]
1.22 [.048]
6
8.00[.315]
MAX
9.65 [.380]
8.64 [.340]
6
1
2 3 4 5
C
12.70 [.500]
14.73 [.580]
0.63 [.025]
0.31 [.012]
1.01[.040]
0.51[.020]
5X
5X
2.92 [.115]
2.16 [.085]
1.70 [.067]
4X
0.25 [.010]
A
B
5-Lead TO-262
IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 5/27/2002
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