IRIS4015PBF [INFINEON]

Switching Regulator, Current-mode, 21A, PSFM5, TO-220, 5 PIN;
IRIS4015PBF
型号: IRIS4015PBF
厂家: Infineon    Infineon
描述:

Switching Regulator, Current-mode, 21A, PSFM5, TO-220, 5 PIN

稳压器 开关式稳压器或控制器 调节器 电源电路 开关式控制器
文件: 总6页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data SheetNo. PD60190-C  
( )  
IRIS4015 K  
INTEGRATED SWITCHER  
Features  
Primary current mode control, and secondary  
voltage mode control  
Packages  
Vcc Over-voltage protection (latched)  
Over-current & over-temperature protection  
Quasi resonant, variable frequency operation  
5 pinTO-220 andTO-262 package  
0.97Rds(on) max/ 650V MOSFET  
Fully Characterized Avalanche Energy  
IRIS4015  
IRIS4015K  
5 Lead TO-220  
5 LeadTO-262  
Descriptions  
The IRIS4015(K) is a dual mode voltage and current controller combined with a MOSFET in a single package.  
The IRIS4015(K) is designed for use in AC/DC switching power supplies up to 230VAC nominal input, and is  
capable of 180W for a universal line input.The device operates on a quasi-resonant or Pulse Ratio Control (PRC)  
basis, and thereby variable frequency operation.  
Typical Connection Diagram  
Vin  
(AC/  
DC)  
Vout  
(DC)  
3
Drain  
4
5
Vcc  
IRIS4015(K)  
FB  
Gnd  
Source  
1
2
(Refer to Lead Assignments for correct pin  
configuration). This/These diagram(s) show electrical  
connections only. Please refer to our DesignTips  
and Application Notes (AN1018a, AN1024a,  
AN1025) for proper circuit board layout.  
www.irf.com  
1
( )  
IRIS4015 K  
Absolute Maximum Ratings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.All voltage parameters are  
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and  
power dissipation ratings are measured under board mounted and still air conditions.  
Symbol Definition  
Terminals Max. Ratings Units  
Note  
IDpeak  
Peak drain current  
3-1  
21  
Single pulse  
IDmax  
Maximum switching current  
3-1  
8
A
V
= 0.78V  
2-3  
Ta=-20 - +125oC  
EAS  
Single pulse avalanche energy  
3-1  
325  
mJ  
single pulse  
ILpeak=5.7A  
VCC  
VTH  
Power supply voltage  
4-3  
5-2  
35  
6
V
W
OCP/FB terminal voltage  
Power dissipation for MOSFET  
P
235  
With infinite heatsink  
Without heatsink  
D1  
3-1  
1.2  
P
Power dissipation for control part (MIC)  
Thermal resistance, junction to case  
Junction temperature  
4-2  
0.8  
Specified by VIN x IIN  
D2  
Rth  
0.53  
°C/W  
JC  
T
T
T
-40-125  
-40-125  
-20-125  
J
Storage temperature  
S
Internal frame temperature in operation  
Refertorecommended  
operating temperature  
°C  
f
T
Ambient operating temperature  
-20-125  
300  
OP  
T
Lead temp. (soldering, 10 seconds)  
L
Recommended Operating Conditions  
Time for input of quasi resonant signals.  
Tth(2)≥1.0µs  
For the Quasi resonant signal inputted to the VOCP/FB  
terminal at the time of quasi resonant operation, the  
signal should be wider thantTth(2)  
VOCP/FB  
Vth(2)  
www.irf.com  
2
( )  
IRIS4015 K  
Electrical Characteristics (for Control Part (MIC))  
V
= 18V, (T = 25°C) unless otherwise specified.  
A
CC  
Symbol  
VCCUV+  
VCCHYS  
IQCCUV  
IQCC  
Definition  
Min. Typ. Max. Units Test Conditions  
VCC supply undervoltage positive going threshold  
VCC supply undervoltage lockout hysteresis  
UVLO mode quiescent current  
14.4  
5.4  
16  
6.0  
17.6  
6.6  
100  
30  
V
µA  
VCC < VCCUV-  
Quiescent operatingVCC supply current  
Maximum OFF time  
mA  
TOFF(MAX)  
TTH(2)  
TOFF(MIN)  
VTH(1)  
40  
60  
µsec  
Minimum input pulse width for quasi resonant signals  
Minimum OFF time  
1.0  
1.5  
OCP/FB terminal threshold voltage 1  
OCP/FB terminal threshold voltage 2  
OCP/FB terminal sink current  
0.68  
1.3  
1.1  
20.5  
0.73 0.78  
V
VTH(2)  
1.45  
1.35  
1.6  
1.7  
IOCP/FB  
VCC(OVP)  
IIN(H)  
mA  
V
VCC overvoltage protection limit  
Latch circuit sustaining current  
22.5 24.5  
400  
8.4  
µA  
VIN(LaOFF)  
TJ(TSD)  
Latch circuit reset voltage  
6.6  
140  
V
oC  
Thermal shutdown activation temperature  
Electrical Characteristics (for MOSFET)  
(T = 25°C) unless otherwise specified.  
A
Symbol  
VDSS  
Definition  
Drain-to-source breakdown voltage  
Drain leakage current  
Min. Typ. Max. Units Test Conditions  
650  
25  
V
µA  
IDSS  
Vds=650V, VGS=0V  
V3-1=10V, ID=8.8A  
RDS(ON)  
On-resistance  
0.97  
t
Rise time (10% to 90%)  
Thermal resistance  
310  
ns  
oC/W  
r
0.53  
Between junction  
and case  
THj-C  
www.irf.com  
3
( )  
IRIS4015 K  
Block Diagram  
4
Vcc  
1
D
START  
REG.  
O.V.P  
LATCH  
DRIVE  
2
S
-
Vth(1)  
OSCILLATOR  
T.S.D  
+
5
Comp.1  
OCP/  
FB  
-
Vth(2)  
+
Comp.2  
3
Ground  
Pin # Symbol  
Description  
Lead Assignments  
1
2
3
4
S
Ground  
D
MOSFET Source terminal  
Ground terminal  
MOSFET Drain terminal  
Control circuit supply voltage  
Vcc  
1
2
3
4
5
Overcurrent detection, and Voltage mode control  
feedback signal  
5
OCP/FB  
Other Functions  
O.V.P. – Overvoltage Protection Circuit  
T.S.D. – Thermal Shutdown Circuit  
5/4/2001  
www.irf.com  
4
( )  
IRIS4015 K  
Case outline  
01-6020 00  
01-3042 01 (TS-001)  
5-Lead TO-220  
www.irf.com  
5
( )  
IRIS4015 K  
Case outline  
B
4.83 [.190]  
4.06 [.160]  
10.29 [.405]  
1.40 [.055]  
9.65 [.380]  
MAX.  
6.22[.245]  
MIN  
1.32 [.052]  
1.22 [.048]  
6
8.00[.315]  
MAX  
9.65 [.380]  
8.64 [.340]  
6
1
2 3 4 5  
C
12.70 [.500]  
14.73 [.580]  
0.63 [.025]  
0.31 [.012]  
1.01[.040]  
0.51[.020]  
5X  
5X  
2.92 [.115]  
2.16 [.085]  
1.70 [.067]  
4X  
0.25 [.010]  
A
B
5-Lead TO-262  
IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105  
Data and specifications subject to change without notice. 5/27/2002  
www.irf.com  
6

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