IRKTF82-08HN [INFINEON]
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR; 快速晶闸管/二极管和晶闸管/晶闸管
| 型号： | IRKTF82-08HN |
| 厂家： | 
Infineon |
| 描述： | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27103 rev. A 09/97
IRK.F82.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/THYRISTOR
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
81 A
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV)
IRK.F82..
81
Units
A
°C
A
@ TC
90
IT(RMS)
ITSM
180
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2200
2300
24.2
A
A
2
2
I t
KA s
2
22.1
KA s
2
2
I √t
242
KA √s
t
range
10 and 15
2
µs
µs
V
q
t
rr
VDRM/VRRM
upto800
-40to125
o
TJ
range
C
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1
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = 125°C
mA
Type number
IRK.F82..
peak reverse voltage
repetitive peak rev. voltage
V
V
04
08
400
800
400
800
30
Current Carrying Capacity
ITM
ITM
ITM
Frequency f
Units
180oel
180oel
100µs
50Hz
160
265
320
240
215
160
50
250
290
260
235
190
50
400
475
400
355
275
50
2240
1070
370
235
-
3100
1550
550
355
-
A
A
400Hz
200
150
135
90
2500Hz
A
5000Hz
A
10000Hz
A
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
50
50
V
80%VDRM
80%VDRM
80%VDRM
V
50
90
50
60
-
-
-
-
A/µs
°C
90
60
90
60
22Ω/ 0.15µF
22Ω/ 0.15µF
22Ω/ 0.15µF
On-state Conduction
Parameter
IRK.F82..
Units Conditions
IT(AV)
Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS current
81
90
A
°C
A
180° conduction, half sine wave
180
TC = 90°C, as AC switch
ITSM
Maximum peak, one-cycle,
non-repetitive surge current
2200
2300
1850
1950
24.2
22.1
17.1
15.6
242
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = 125°C
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
1.20
1.24
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
2.18
2.00
1.96
mW (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
t2
VTM
IH
V
Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
Maximum holding current
Typical latching current
600
mA TJ = 25°C, IT > 30 A
IL
1000
mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Switching
Parameter
IRK.F82..
800
Units Conditions
di/dt
Maximum non-repetitive rate of rise
A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
TJ = 25°C
t
Maximum recovery time
Maximum turn-off time
2
µs
µs
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
rr
t
N
L
q
10
15
VR = 50V, dv/dt = 400V/µs linear to 80% VDRM
Blocking
Parameter
IRK.F82..
1000
Units Conditions
dv/dt
Maximum critical rate of rise of off-state
voltage
V/µs
TJ = 125°C., exponential to = 67% VDRM
VINS
IRRM
IDRM
RMS isolation voltage
3000
30
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum peak average gate power
IGM Maximum peak positive gate current
- VGM Maximum peak negative gate voltage
IRK.F82..
Units Conditions
PGM
40
2
W
W
A
f = 50 Hz, d% = 50
TJ = 125°C, f = 50Hz, d% = 50
5
TJ = 125°C, t < 5ms
p
5
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
3
mA TJ = 25°C, Vak 12V, Ra = 6
VGT
IGD
VGD
V
20
0.25
mA TJ = 125°C, rated VDRM applied
V
DC gate voltage not to trigger
Thermal and Mechanical Specifications
Parameter
IRK.F82..
- 40 to 125
- 40 to 150
0.25
Units Conditions
°C
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
0.035
K/W Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
Nm
T
Mounting torque ± 10% IAP to heatsink
busbar to IAP
4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
should be rechecked after a period of 3 hoursto allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
(lb*in)
restrained during tightening. Threads must be
lubricatedwithacompound
wt
Approximate weight
g (oz)
3
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.016
0.019
0.024
0.035
0.060
0.011
0.020
0.026
0.037
0.060
K/W
TJ = 125°C
60°
30°
Ordering Information Table
Device Code
IRK
T
F
8
2
-
08
H
L
N
3
4
5
8
1
2
6
7
8
1
2
3
4
5
-
-
-
-
-
Moduletype
Circuitconfiguration
Fast SCR
Current rating: IT(AV) x 10 rounded
1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
6
7
8
-
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
dv/dt code: H ≤ 400V/µs
tq code: N ≤ 10µs
L ≤ 15µs
9
-
None = Standarddevices
N
= Aluminumnitradesubstrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate and
cathode wire: UL 1385
UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...1
IRK...2
25 (0.98)
----
----
41 (1.61) 47 (1.85)
23 (0.91) 30 (1.18) 36 (1.42)
----
----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
130
120
110
100
90
130
120
110
100
90
IRK.F82.. Se rie s
IRK.F82.. Se rie s
(DC ) = 0.25 K/ W
R
(DC ) = 0.25 K/W
R
thJC
thJC
Co nd uctio n Perio d
C o nd uc tion An gle
30°
30°
60°
60°
90°
90°
80
80
120°
120°
180°
180°
DC
70
0
70
0
20
40
60
80
100
20
40
60
80 100 120 140
Ave ra g e On-sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Ave ra g e On-sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
5
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
200
180
160
140
120
100
80
140
180°
DC
180°
120°
90°
60°
30°
120°
90°
60°
30°
120
100
80
60
40
20
0
RMS Lim it
RMS Limit
Co nd uctio n Pe rio d
C o nd u ctio n Ang le
60
IRK.F82.. Se rie s
Pe r Junc tion
IRK.F82.. Se rie s
Pe r Junc tio n
40
20
T = 125°C
T
= 125°C
J
J
0
0
10 20 30 40 50 60 70 80 90
Ave ra g e On -sta te Curre nt (A)
0
20
40
60
80
100 120 140
Ave ra g e O n-sta te C urre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
2200
2000
1800
1600
1400
1200
1000
800
At Any Ra te d Lo a d Co nd itio n And With
Ma xim um No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tio n. Co ntro l
Of Co nd uc tion Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Follo wing Surg e.
RRM
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
In itia l T = 125°C
J
No Vo lta g e Re a p p lie d
Ra te d V Re a p p lie d
RRM
IRK.F82.. Serie s
Pe r Junc tio n
IRK.F82.. Se rie s
Pe r Junc tio n
1
10
100
0.01
0.1
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le Cu rre nt Pulse s (N)
Pulse Tra in Dura tion (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1
Ste a d y Sta te Va lue
R
= 0.25 K/ W
thJC
(DC Op e ra tio n)
T = 25°C
J
0.1
0.01
T = 125°C
J
1000
IRK.F82.. Se rie s
Pe r Junc tio n
IRK.F82.. Se rie s
Pe r Junc tio n
100
0.001
1
2
3
4
5
6
7
8
0.001
0.01
0.1
1
10
100
Insta nta n e o us O n-sta te Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
120
110
100
90
160
140
120
100
80
I
= 500 A
300 A
TM
I
= 500 A
IRK.F82.. Se rie s
= 125 °C
TM
IRK.82.. Se rie s
T
T = 125 °C
J
J
300 A
200 A
80
100 A
200 A
70
50 A
100 A
50 A
60
50
60
40
30
40
20
20
10
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll O f O n-sta te C urre nt - d i/d t (A/ µs)
Ra te O f Fa ll Of On -sta te C urre nt - d i/ d t (A/µs)
Fig. 9 - Reverse Recovery Charge Characteristic
Fig. 10 - Reverse Recovery Current Characteristic
1E4
1E3
1E2
Snub b e r c irc uit
Snub b e r c irc u it
IRK.F82.. Se rie s
Sinuso id a l Pulse
IRK.F82.. Se rie s
Sinuso id a l Pulse
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
s
s
T
= 90 °C
T
= 60 °C
C
tp
tp
C
DRM
D
DRM
D
50 Hz
150
400
1000
50 Hz
150
400
2500
1000
2500
5000
5000
1E1
1E2
1E3
1E
4
4
1
E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
Snub b e r c irc u it
Snu bb e r c irc u it
IRK.F82.. Se rie s
Tra p e zoid a l Pulse
IRK.F82.. Se rie s
Tra p e zo id a l Pulse
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
s
s
T
= 60 °C , d i/dt 50A/µs
T
= 60 °C, d i/d t 100A/µs
tp
tp
C
C
DRM
D
DRM
D
50 Hz
50 Hz
150
150
400
400
1000
1000
2500
2500
1E2
5000
5000
1E1
1E2
1E3
1E
4
1
1
E1
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 12 - Frequency Characteristics
7
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IRK.F82.. Series
Bulletin I27103 rev. A 09/97
1E4
Snu bb e r c irc uit
IRK.F82.. S eries
Tra p ezo id a l Pulse
Snub b er c ircu it
IRK.F 82.. Se rie s
Tra p ezo id a l Pulse
R
C
V
= 22 o hm s
= 0.15 µF
s
s
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
T
= 90 °C , d i/d t 50A/µs
tp
C
T
= 90 °C, d i/d t 100A/µs
tp
C
= 80% V
DRM
D
DRM
D
1E3
1E2
50 Hz
150
400
50 Hz
150
1E3
1000
400
1000
2500
2500
5000
5000
1E1
1E2
1E3
1E
4
1
1
E1
1E2
1E4
Pu lse Ba se width (µs)
Pulse Ba se wid th (µs)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
10 joule s pe r pulse
5
10 joule s pe r p ulse
2.5
5
1
2.5
0.5
0.25
0.1
1
0.5
0.25
0.1
0.05
0.05
0.01
IRK.F82.. Se rie s
Tra p e zoida l Pulse
IRK.F82.. Se rie s
Sinusoida l p ulse
tp
d i/d t 50A/µs
tp
1E1
1E2
1E3
1
1
E1
1E2
1E3
1E4
1E4
Pulse Ba se width (µs)
Pulse Ba se w id th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Re c ta ngula r ga te pulse
(1) PG M = 10W, tp = 10m s
(2) PG M = 20W, tp = 5m s
(3) PG M = 40W, tp = 2.5ms
a ) Re c o m m e nde d loa d line fo r
ra ted d i/ d t : 20 V, 10 ohm s tr<=1 µs
b ) Rec o m m e nd e d loa d line for
<=30% ra ted d i/ d t : 10 V, 10 o hm s
tr<=1 µs
(a )
(b )
(1)
(2)
(3)
VGD
IGD
IRK.F82.. Se rie s Fre que nc y Limite d b y PG (AV)
0.1
0.01
0.1
1
10
100
Insta nta n e o us Ga te C urre nt (A)
Fig. 15 - Gate Characteristics
8
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