IRL2203NSTRLPBF [INFINEON]

Advanced Process Technology;


型号：	IRL2203NSTRLPBF
厂家：	Infineon
描述：	Advanced Process Technology
文件：	总10页 (文件大小：295K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95219A

IRL2203NSPbF

IRL2203NLPbF

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 30V

l Fully Avalanche Rated

l 100% R_GTested

R_DS(on)= 7.0mΩ

l Lead-Free

I_D= 116A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistancepersiliconarea.Thisbenefit,combinedwiththefastswitching

speed and ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating

diesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowest

possible on-resistance in any existing surface mount package. The D²Pak

issuitableforhighcurrentapplicationsbecauseofitslowinternalconnection

resistanceandcandissipateupto2.0Winatypicalsurfacemountapplication.

Thethrough-holeversion(IRL2203NL)isavailableforlow-profileapplications.

D²Pak

IRL2203NSPbF

TO-262

IRL2203NLPbF

Absolute Maximum Ratings

Symbol

Parameter

Max

Units

Continuous Drain Current, V_GS@ 10V

116

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 100°C

400

3.8

180

@T_A= 25°C

@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

1.2

± 16

W/°C

I_AR

Repetitive Avalanche Energy

E_AR

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

°C

Storage Temperature Range

T_STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ

–––

Max

0.85

Units

Junction-to-Case

R_θ

°C/W

Junction-to-Ambient (PCB mount, steady state)

www.irf.com

10/01/10

IRL2203NS/LPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Min Typ Max Units

30 ––– –––

––– 0.029 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_GS= 0V, I_D= 250µA

/ T

∆

Breakdown Voltage Temp. Coefficient

(BR)DSS

–––

1.0

–––

7.0

V_GS= 10V, I_D= 60A

V_GS= 4.5V, I_D= 48A

V_DS= V_GS, I_D= 250µA

R_DS(on)

Static Drain-to-Source On-Resistance

V_GS(th)

g_fs

Gate Threshold Voltage

3.0

–––

Forward Transconductance

Drain-to-Source Leakage Current

_DS= 25V, I_D= 60A

I_DSS

–––

0.2

_DS= 30V, V_GS= 0V

µA

250

100

-100

_DS= 24V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 16V

_GS= -16V

I_D= 60A

_DS= 24V

V_GS= 4.5V, See Fig. 6 and 13

Q_g

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Gate Resistance

3.0

–––

Ω

Turn-On Delay Time

Rise Time

–––

_DD= 15V

_D= 60A

R_G= 1.8

160

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

Ω

V_GS= 4.5V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

4.5

7.5

–––

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

E_AS

Input Capacitance

Output Capacitance

––– 3290 –––

––– 1270 –––

_DS= 25V

ƒ = 1.0MHz, See Fig. 5

mJ I_AS= 60A, L = 0.16mH

Reverse Transfer Capacitance

Single Pulse Avalanche Energy

–––

170

1320 290

–––

Source-Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

Min Typ Max Units

Conditions

MOSFET symbol

–––

––– 116

(Body Diode)

showing the

Pulsed Source Current

integral reverse

–––

400

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

1.2

T = 25°C, I = 60A, V = 0V

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = 60A

J F

di/dt = 100A/µs

110

170

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

ꢀ This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to T_J= 175°C .

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 0.16mH R_G= 25Ω,

I_AS= 60A, V_GS=10V (See Figure 12)

I_SD≤ 60A, di/dt ≤ 110A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to

application note #AN-994.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R_θis measured at T_Japproximately 90°C

www.irf.com

IRL2203NS/LPbF

1000

100

1000

100

VGS

15V

TOP

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

3.7V

3.5V

3.3V

3.0V

BOTTOM 2.7V

2.7V

20µs PULSE WIDTH

T = 175 C

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.5

100A

T = 25 C

2.0

1.5

1.0

0.5

0.0

T = 175 C

100

= 15V

=10V

20µs PULSE WIDTH

2.0

-60 -40 -20

20 40 60 80 100 120 140 160 180

3.0

4.0

5.0 6.0 7.0

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRL2203NS/LPbF

6000

= 60A

= 0V,

f = 1MHz

C SHORTED

= C + C

iss

gd ,

= C

= 24V

= 15V

rss

5000

4000

3000

2000

1000

= C + C

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

10000

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100

T = 175 C

100µsec

1msec

T = 25 C

Tc = 25°C

Tj = 175°C

Single Pulse

10msec

= 0 V

2.0

0.1

0.0

0.4

0.8

1.2

1.6

2.4

, Drain-toSource Voltage (V)

100

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRL2203NS/LPbF

120

100

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

SINGLE PULSE

(THERMAL RESPONSE)

0.02

0.01

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRL2203NS/LPbF

600

500

400

300

200

100

15V

TOP

24A

42A

BOTTOM 60A

DRIVER

D.U.T

20V

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

V_GS

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRL2203NS/LPbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

]

[

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET^®power MOSFETs

www.irf.com

IRL2203NS/LPbF

D²Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D²Pak (TO-263AB) Part Marking Information

THIS IS AN IRF530S WITH

PART NUMBER

LOT CODE 8024

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 02, 2000

IN THE ASSEMBLY LINE "L"

F530S

DATE CODE

YEAR 0 = 2000

WEE K 02

ASSEMBLY

LOT CODE

LINE L

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

F530S

DAT E CODE

P = DESIGNATES LEAD - FREE

PRODUCT (OPTIONAL)

YEAR 0 = 2000

AS S E MB LY

LOT CODE

WE E K 02

A = AS S E MB L Y S IT E CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRL2203NS/LPbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L

LOT CODE 1789

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LINE "C"

DAT E CODE

YEAR 7 = 1997

WE E K 19

AS S EMBL Y

LOT CODE

LINE C

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 7 = 1997

AS S EMBL Y

LOT CODE

WEE K 19

A = AS S EMBL Y S IT E CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRL2203NS/LPbF

D²Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

26.40 (1.039)

24.40 (.961)

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/2010

www.irf.com

IRL2203NSTRLPBF [INFINEON]

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