IRL2203S [INFINEON]
Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A); 功率MOSFET （ VDSS = 30V ， RDS（ON） = 0.007ohm ，ID = 100A ）
| 型号： | IRL2203S |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A) |
| 文件： | 总9页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
PD 9.1091A
IRL2203S
HEXFET® Power MOSFET
D
l Logic-Level Gate Drive
l Surface Mount
VDSS = 30V
RDS(on) = 0.007Ω
ID = 100Aꢀ
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
D2Pak
Absolute Maximum Ratings
Parameter
Max.
100ꢀ
71
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
400
PD @TA = 25°C
PD @TC = 25°C
PowerDissipation
3.8
W
W
PowerDissipation
130
LinearDeratingFactor
0.83
± 20
390
W/°C
V
VGS
EAS
IAR
Gate-to-SourceVoltage
SinglePulseAvalancheEnergy
AvalancheCurrent
mJ
A
60
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
PeakDiodeRecoverydv/dt
OperatingJunctionand
13
mJ
V/ns
1.2
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.2
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
IRL2203S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.007
––– ––– 0.01
VGS = 10V, ID = 60A
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
1.0
47
––– 2.5
––– –––
V
S
ForwardTransconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 110
––– ––– 31
––– ––– 57
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
TotalGateCharge
IGSS
VGS = -20V
Qg
ID = 60A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
RiseTime
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
–––
15 –––
VDD = 15V
––– 210 –––
ID = 60A
ns
td(off)
tf
Turn-Off Delay Time
–––
–––
29 –––
54 –––
RG = 1.8Ω, VGS = 4.5V
RD = 0.25Ω, See Fig. 10
Between lead,
Fall Time
LS
Internal Source Inductance
7.5
–––
–––
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
3500 –––
––– 1400 –––
––– 690 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
100ꢀ
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
400
p-n junction diode.
S
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
Reverse RecoveryCharge
––– ––– 1.3
––– 94 140
––– 280 410
V
TJ = 25°C, IS = 60A, VGS = 0V
TJ = 25°C, IF = 60A
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 60A. (See Figure 12)
ꢀ Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRL2203N data and test conditions.
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2203S
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TO P
TO P
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TJ = 25oC
TJ = 175oC
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0 0
1 0 0
1 0
I
= 100A
D
T
= 25°C
J
T
= 1 75 °C
J
V
= 15V
DS
V
= 10V
GS
20µs P ULSE W ID TH
1
A
9. 0A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
8. 0
TJ , Junction Tem perature (°C)
VG S , Ga te-to-So urce Voltage (V )
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRL2203S
15
12
9
8000
I
= 60A
V
C
C
C
= 0V,
f = 1M Hz
D
GS
iss
= C
+ C
+ C
,
C
ds
SHORTE D
V
V
= 24V
= 15V
gs
gd
D S
D S
= C
= C
rss
o ss
gd
ds
g d
6000
C
C
is s
o s s
4000
2000
0
6
C
rs s
3
FOR TE ST CIRCUIT
SEE FIGURE 13
0
A
A
0
30
60
90
120
150
1
10
100
Q G , Total Gate Charge (nC)
VD S , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1 0 0
1 0
1000
100
10
OPERATION IN THIS AREA LIM ITED
BY R
DS(o n)
10 µs
T
= 25°C
J
10 0µs
T
= 175°C
J
1m s
10m s
T
T
= 25°C
= 175°C
S ingle Pulse
C
J
V
= 0V
GS
A
1
A
0. 5
1. 0
1. 5
2. 0
2. 5
3. 0
3. 5
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL2203S
RD
VDS
1 0 0
VGS
LIM ITED BY PACKA GE
D.U.T.
RG
+VDD
8 0
6 0
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4 0
2 0
V
DS
90%
A
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
10%
TC , Case Tem perature (°C)
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1 0
1
D = 0.50
0.20
P
0.10
0.05
D M
0. 1
t
1
t
0.02
0.01
2
Notes:
1. D uty factor D
=
t
/ t
1 2
SINGLE PULSE
(THER MAL R ESPONSE)
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
A
0 . 0 1
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0. 1
1 0
t1 , Rectan gular Pulse Du ration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2203S
1000
800
600
400
200
0
I
D
TOP
24A
42A
B OTTOM 60A
1 5V
D R IV ER
L
V
D S
D .U .T
R
G
+
V
D D
-
I
A
A S
5.0 V
20 V
0 .0 1
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
= 15V
50
D D
A
175
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
5.0 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRL2203S
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2203S
Package Outline — D2Pak
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
M AX.
- A -
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B
A
M
MINIM UM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
NOTES:
LEAD ASSIGNMEN TS
1 - GATE
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
DIM ENSIONING & TOLERAN CING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INC H.
3 - SOURCE
HEATSINK & LEAD D IM ENSIONS DO NOT INCLUDE BUR RS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking
E XA M PL E : TH IS IS A N IRF 5 30 S
ITHS E LY
L OT C OD E 9B 1 M
A
W
A S M B
IN TE R NA TION A L
P A RT N U M B E R
F 53 0 S
R E CT IF IE R
9 2 4 6
L OG O
9 B
DA TE C O DE
1M
(YYW W )
A S S EM BL Y
YY
= YE AR
L OT CO DE
W W
=
W E EK
IRL2203S
Tape & Reel — D2Pak
Dimensions are shown in millimeters (inches)
T R R
1 .60 (.063 )
1 .50 (.059 )
1 . 6 0 (. 0 6 3 )
1 . 5 0 (. 0 5 9 )
4.10 (.16 1)
3.90 (.15 3)
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
F E E D D IR E C T IO N
1 1 . 6 0 (. 4 5 7 )
1 1 . 4 0 (. 4 4 9 )
1 .85 (.07 3)
1 .65 (.06 5)
2 4 . 3 0 (. 9 5 7 )
2 3 . 9 0 (. 9 4 1 )
1 5 . 4 2 (. 6 0 9 )
1 5 . 2 2 (. 6 0 1 )
TR L
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3 . 50 (.5 3 2 )
1 2 . 80 (.5 0 4 )
2 7 .4 0 (1 . 07 9 )
2 3 .9 0 (. 9 41 )
4
330.00
(14.173)
MAX.
60 .0 0 (2. 3 6 2)
M IN .
3 0 . 40 (1 .1 9 7)
M A X .
N O T E S
1. C O M F O R M S T O E IA -4 1 8.
2. C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R .
3. D IM E N S IO N M E A S U R E D H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N
:
26.40 (1.039)
24.40 (.961)
4
@
3
@
O U T E R E D G E .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
7/96
相关型号：
IRL2203SPBF
Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRL2203STRR
Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRL2310PBF
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
IRL2505-011
Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
IRL2505-018
Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
©2020 ICPDF网 联系我们和版权申明