IRL2910STRL [INFINEON]

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3;


型号：	IRL2910STRL
厂家：	Infineon
描述：	Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 局域网开关脉冲晶体管
文件：	总10页 (文件大小：335K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91376C

IRL2910S/L

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Surface Mount

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 100V

R_DS(on)= 0.026Ω

l Fully Avalanche Rated

Description

I_D= 55A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

itslowinternalconnectionresistanceandcandissipateup

to 2.0W in a typical surface mount application.

The through-hole version (IRL2910L) is available for low-

profile applications.

TO-262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

190

3.8

200

1.3

± 16

520

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

10/09/03

IRL2910S/L

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

100

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, I_D= 1mAꢀ

0.026

0.030

0.040

V_GS= 10V, I_D= 29A

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS= 5.0V, I_D= 29A

V_GS= 4.0V, I_D= 24A

V_DS= V_GS, I_D= 250µA

V_DS= 50V, I_D= 29Aꢀ

V_GS(th)

g_fs

Gate Threshold Voltage

1.0

2.0

Forward Transconductance

250

100

-100

140

_DS= 100V, V_GS= 0V

V_DS= 80V, V_GS= 0V, T_J= 150°C

_GS= 16V

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -16V

I_D= 29A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 80V

V_GS= 5.0V, See Fig. 6 and 13 ꢀ

V_DD= 50V

100

I_D= 29A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 1.4Ω, V_GS= 5.0V

R_D= 1.7Ω, See Fig. 10 ꢀ

Between lead,

L_S

Internal Source Inductance

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

3700

630

330

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5ꢀ

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

I_SM

Pulsed Source Current

(Body Diode) ꢀ

integral reverse

190

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

1.3

240 350

1.8 2.7

T_J= 25°C, I_S= 29A, V_GS= 0V

T_J= 25°C, I_F= 29A

Q_rr

t_on

µC di/dt = 100A/µs ꢀ

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V_DD= 25V, starting T_J= 25°C, L = 1.2mH

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Uses IRL2910 data and test conditions

R_G= 25Ω, I_AS= 29A. (See Figure 12)

I_SD≤ 29A, di/dt ≤ 490A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

IRL2910S/L

1000

100

1000

100

VGS

15V

VGS

15V

TOP

12V

10V

8.0V

6.0V

4.0V

3.0V

12V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

20µs PULSE WIDTH

= 25°C

= 175°C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1000

100

= 48A

T_J= 25°C

T = 175°C

V_DS= 50V

20µs PULSE WIDTH

_6.0A

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

, Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

IRL2910S/L

6000

= 29A

= 0V,

f = 1MHz

iss

rss

oss

= 80V

= 50V

= 20V

= C + C

SHORTED

= C

5000

4000

3000

2000

1000

iss

= C + C

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

200

120

160

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10µs

100µs

100

T = 175°C

1ms

T = 25°C

10ms

= 25°C

= 175°C

Single Pulse

= 0V

1000

0.4

0.8

1.2

1.6

2.0

100

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

IRL2910S/L

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

5.0V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

T , Case Temperature (°C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.02

0.1

Notes:

1. Duty factor D = t / t

0.01

SINGLE PULSE

(THERMAL RESPONSE)

thJC

2. Peak T = P

x Z

+ T

0.01

0.00001

0.0001

0.001

0.01

0.1

t₁, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL2910S/L

1400

1200

1000

800

600

400

200

TOP

12A

20A

BOTTOM 29A

15V

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

= 25V

175

100

125

150

(BR)DSS

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

5.0 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

IRL2910S/L

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRL2910S/L

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information

THIS IS AN IRF530S WITH

LOT CODE 8024

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 02, 2000

IN THE ASSEMBLY LINE "L"

F530S

DATE CODE

YEAR 0 = 2000

WEE K 02

AS S E MB LY

LOT CODE

LINE L

For GB Production

THIS IS AN IRF530S WITH

LOT CODE 8024

PART NUMBER

DATE CODE

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 02, 2000

IN THE ASSEMBLY LINE "L"

F530S

LOT CODE

IRL2910S/L

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

EXA

MPLE:

THIS

IS AN IRL3103L

LOT CODE 178

PART NUMBER

INTERNATIONAL

RECTIFI

ASSEMBLED ON WW19, 1

997

IN THE ASSEMBLY LINE "C"

LOGO

DATE CODE

YEAR 7 = 1997

WEEK 19

ASSEMB

LOT CODE

INE C

IRL2910S/L

D²Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/03

IRL2910STRL [INFINEON]

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