IRL3102PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRL3102PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95658
IRL3102PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
D
VDSS = 20V
RDS(on) = 0.013Ω
l Lead-Free
G
Description
ID = 61A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
61
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
39
A
240
89
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.71
± 10
14
VGS
Gate-to-Source Voltage
VGSM
Gate-to-Source Voltage
V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
220
35
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating
8.9
5.0
mJ
V/ns
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
Units
RθJC
RθCS
RθJA
1.4
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
°C/W
07/30/04
IRL3102PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.016 V/°C Reference to 25°C, ID = 1mA
0.015
0.013
0.70
VGS = 4.5V, ID = 37A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = 7.0V, ID = 37A
VDS = VGS, ID = 250µA
VDS = 16V, ID = 35A
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
36
25
250
100
-100
58
14
21
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 35A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 16V
VGS = 4.5V, See Fig. 6
130
80
10
VDD = 10V
RiseTime
ID = 35A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 9.0Ω, VGS = 4.5V
RD = 0.28Ω,
Between lead,
6mm (0.25in.)
110
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.5
nH
pF
G
from package
and center of die contact
VGS = 0V
7.5
S
Ciss
Coss
Crss
Input Capacitance
2500
1000
360
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
showing the
D
IS
61
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
240
1.3
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
TJ = 25°C, IS = 37A, VGS = 0V
59
110 160
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
88
ns
TJ = 25°C, IF = 35A
Qrr
ton
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 35A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature.
Starting TJ = 25°C, L = 0.36mH
RG = 25Ω, IAS = 35A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRL3102PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
TOP
10V
10V
8.0V
8.0V
6.0V
6.0V
4.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
61A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=4.5V
GS
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
IRL3102PbF
4200
15
12
9
V
= 0V,
f = 1MHz
gd , ds
I
D
=
35A
GS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
3600
3000
2400
1800
1200
600
rss
V
= 16V
C
= C + C
ds
DS
oss
gd
C
iss
6
C
oss
3
C
rss
0
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.2
1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
IRL3102PbF
70
60
50
40
30
20
10
0
500
400
300
200
100
0
I
D
TOP
16A
22A
BOTTOM 35A
25
50
75
100
125
°
150
25
50
75
100
125
150
T , Case Temperature ( C)
°
Starting T , Junction Temperature ( C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
CaseTemperature
Vs. Drain Current
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3102PbF
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.015
0.014
VGS = 4.5V
0.013
0.012
0.011
0.010
I
= 61A
D
VGS = 7.0V
60
A
0
20
40
80
0
2
4
6
8
10
I
, Drain Current (A)
D
VGS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3102PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
4
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED O N WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S E MBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
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