IRL3102S [INFINEON]
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A); 功率MOSFET （ VDSS = 20V ， RDS（ON） = 0.013瓦特，ID = 61A ）
| 型号： | IRL3102S |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) |
| 文件： | 总8页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1691A
IRL3102S
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
D
VDSS = 20V
RDS(on) = 0.013W
G
ID = 61A
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 Pak
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5Vꢀ
Continuous Drain Current, VGS @ 4.5Vꢀ
Pulsed Drain Current ꢀ
61
39
A
240
PD @TC = 25°C
Power Dissipation
89
W
W/°C
V
Linear Derating Factor
0.71
± 10
220
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
35
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
8.9
mJ
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
1.4
40
Units
RqJC
RqJA
°C/W
9/16/97
IRL3102S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mAꢀ
––– ––– 0.015
––– ––– 0.013
0.70 ––– –––
VGS = 4.5V, ID = 37A
VGS = 7.0V, ID = 37A
VDS = VGS, ID = 250µA
VDS = 16V, ID = 35Aꢀ
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
RDS(on)
Static Drain-to-Source On-Resistance
W
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
36
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 58
––– ––– 14
––– ––– 21
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 35A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 16V
VGS = 4.5V, See Fig. 6 ꢀ
VDD = 10V
–––
––– 130 –––
––– 80 –––
10 –––
RiseTime
ID = 35A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 9.0W,VGS = 4.5V
RD = 0.28W, ꢀ
Between lead,
––– 110 –––
nH
pF
LS
Internal Source Inductance
––– 7.5 –––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2500 –––
––– 1000 –––
––– 360 –––
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
61
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
––– ––– 240
––– ––– 1.3
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
TJ = 25°C, IS = 37A, VGS = 0V
TJ = 25°C, IF = 35A
––– 59
88
ns
nC
Qrr
ton
––– 110 160
di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
I £35A, di/dt £100A/µs, VDD £V(BR)DSS
,
Repetitive rating; pulse width limited by
SD
TJ £150°C
max. junction temperature.
Pulse width £300µs; duty cycle £2%.
ꢀ Uses IRL3102 data and test conditions
Starting TJ = 25°C, L = 0.36mH
RG = 25W, IAS = 35A.
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
`
IRL3102S
1000
100
10
1000
VGS
VGS
TOP
10V
TOP
10V
8.0V
8.0V
6.0V
6.0V
4.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
100
2.5V
2.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
61A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 4.5V
GS
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
IRL3102S
4200
15
12
9
V
= 0V,
f = 1MHz
C
I
D
=
35A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
3600
3000
2400
1800
1200
600
rss
V
= 16V
C
= C + C
DS
oss
ds
C
iss
6
C
oss
3
C
rss
0
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.2
1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
IRL3102S
500
400
300
200
100
0
70
60
50
40
30
20
10
0
I
D
TOP
16A
22A
BOTTOM 35A
25
50
75
100
125
150
25
50
75
100
125
150
°
, Case Temperature ( C)
T
°
C
Starting T , Junction Temperature( C)
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
CaseTemperature
Vs. DrainCurrent
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3102S
0.015
0.014
0.013
0.012
0.011
0.010
0.020
0.018
0.016
0.014
0.012
0.010
0.008
VGS = 4.5V
ID = 61A
VGS = 7.0V
0
20
I
40
60
80
0
2
4
6
8
10
, Drain Current (A)
V
, Gate-to-Source Voltage (V)
D
GS
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3102S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
1.32 (.052)
1.22 (.048)
M AX.
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LE AD ASSIGNM ENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENS IO NS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
DIM ENS IO NING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTRO LLING DIMENSION : INCH.
3 - SOURCE
HEATSINK & LEAD DIM ENSIONS DO N OT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIO NAL
RECTIFIER
LOGO
PART NUMB ER
F530S
9246
1M
DATE CODE
(YYW W )
9B
A SSEM BLY
YY
=
YEAR
= W EEK
LOT
CODE
W W
IRL3102S
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069 )
1.25 (.049 )
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
M IN .
30.40 (1.197)
M AX.
N O TES
:
1. C O M FO RM S TO EIA-418.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
3. D IM ENSIO N M EASUR ED
4. IN CLU D ES FLAN G E D ISTO R TIO N
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
@
O U TER ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/97
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