IRL3103D1S [INFINEON]
FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A); FETKY⑩ MOSFET和肖特基二极管（ VDSS = 30V ， RDS（ON） = 0.014ohm ，ID = 64A ）
| 型号： | IRL3103D1S |
| 厂家： | 
Infineon |
| 描述： | FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A) |
| 文件： | 总7页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-9.1558A
IRL3103D1S
FETKYTM MOSFET & SCHOTTKY RECTIFIER
®
l Co-packagedHEXFET PowerMOSFET
and Schottky Diode
D
VDSS = 30V
RDS(on) = 0.014Ω
ID = 64A
l Generation5Technology
l LogicLevelGateDrive
l Minimize Circuit Inductance
l IdealForSynchronousRegulatorApplication
G
S
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulatorapplications. AlowonresistanceGen5MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
2
D
Pak
Absolute Maximum Ratings
Parameter
Max.
64
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
45
A
220
3.1
PD @TA = 25°C
PD @TC = 25°C
W
W
Power Dissipation
89
Linear Derating Factor
0.56
± 16
W/°C
V
VGS
TJ
Gate-to-Source Voltage
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
1.4
Units
RθJC
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
°C/W
4/2/98
IRL3103D1S
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.014
––– ––– 0.019
VGS = 10V, ID = 34A
VGS = 4.5V, ID = 28A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 34A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
23
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 0.10
––– ––– 22
––– ––– 100
––– ––– -100
––– ––– 43
––– ––– 14
––– ––– 23
mA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 32A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6
–––
9.0 –––
VDD = 15V
RiseTime
––– 210 –––
ID = 32A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
–––
–––
20 –––
54 –––
RG = 3.4Ω, VGS =4.5V
RD = 0.43 Ω,
Between lead,
LS
Internal Source Inductance
––– 7.5 –––
nH
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Ciss
Input Capacitance
––– 1900 –––
––– 810 –––
––– 240 –––
––– 3500 –––
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IF (AV)
ISM
( Schottky)
2.0
––– –––
––– –––
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction and Schottky diode. S
TJ = 25°C, IS = 32A, VGS = 0V
TJ = 25°C, IS = 1.0A, VGS = 0V
TJ = 25°C, IF = 32A
220
VSD1
VSD2
trr
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– ––– 0.50
V
V
––– 51
––– 49
77
73
ns
Qrr
nC di/dt = 100A/µs
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103D1 data and test conditions
IRL3103D1S
1000
100
10
1000
100
10
VGS
15V
VGS
15V
12V
TOP
TOP
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE WIDTH
T
= 25°C
T
= 150°C
J
J
1
1
A
A
100
0.1
1
10
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
30
20
10
0
30
VGS
VGS B
TOP
10V
8.0V
6.0V
4.0V
2.0V
TOP
10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
BOTTOM 0.0V
20
10
0
0.0V
0.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
= 25°C
T
= 150°C
T
J
J
A
A
0.0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
V
, Source-to-Drain Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
SD
Fig 4. Typical Reverse Output Characteristics
Fig 3. Typical Reverse Output Characteristics
IRL3103D1S
4000
15
12
9
V
= 0V,
f = 1MHz
C
I = 32A
D
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
V
V
= 24V
= 15V
C
= C + C
DS
DS
oss
ds
3000
2000
1000
0
C
iss
6
C
oss
3
C
rss
0
1
10
100
0
20
40
60
80
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
70
60
50
40
30
20
10
1000
TJ = 25°C
100
10
1
TJ = 150°C
V D S = 15V
20µs PULSE WIDTH
0
9.0A
25
50
75
100
125
150
175
2.0
3.0
4.0
5.0
6.0
7.0
8.0
°
, Case Temperature ( C)
T
C
VG S , Gate-to-Source Voltage (V)
Fig 8. Typical Transfer Characteristics
Fig 7. Maximum Drain Current Vs.
CaseTemperature
IRL3103D1S
2.0
1.5
1.0
0.5
0.0
I
= 56A
D
V
= 10V
G S
A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
J
, Junction Tem perature (°C)
Fig 9. Normalized On-Resistance
Vs.Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
N otes:
1 . D uty factor D
=
t
/ t
2
1
Z
2. Pea k
T
=
P
x
+ T
th JC
C
D M
J
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig10. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3103D1S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
M AX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIM ENSION : INCH.
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
PartMarkingInformation
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEM BLY
YY
=
YEAR
= W EEK
LOT CODE
W W
IRL3103D1S
Tape & Reel Information
D2Pak
TRR
1 .6 0 (.063 )
1 .5 0 (.059 )
1.60 (.06 3)
1.50 (.05 9)
4.10 (.16 1)
3.90 (.15 3)
0.3 68 (.0145)
0.3 42 (.0135)
FEED DIRECTION
1.85 (.07 3)
11.60 (.457)
11.40 (.449)
1.65 (.06 5)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.42 9)
10.70 (.42 1)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M A X.
60.00 (2.362)
MIN .
30.40 (1.197)
M AX.
NO TES :
1. CO M FO RM S TO EIA-418.
2. CO N TR O LLIN G D IM ENSIO N : M ILLIM ET ER .
3. DIM ENSIO N MEASUR ED
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
4. INC LUD ES FLAN G E D ISTO R TIO N
@
O UTER EDG E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice.
4/98
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