IRLBA3803/P [INFINEON]
30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package ; 30V单N沟道HEXFET功率MOSFET的超级220 （ TO- 273AA ）封装\n
| 型号： | IRLBA3803/P |
| 厂家： | 
Infineon |
| 描述： | 30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
|
| 文件： | 总8页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91841C
IRLBA3803
HEXFET® Power MOSFET
●
●
●
●
●
●
Logic-LevelGateDrive
D
Advanced Process Technology
175°COperatingTemperature
Fast Switching
Fully Avalanche Rated
Purchase IRLBA3803/P for solder plated option.
VDSS = 30V
R
DS(on) = 0.005Ω
G
ID = 179A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The Super-220 is a package that has been designed to have the same mechanical
outline and pinout as the industry standard TO-220 but can house a considerably
larger silicon die. It has increased current handling capability over both the TO-220
and the much larger TO-247 package. This makes it ideal to reduce component
count in multiparalled TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a TO-220 outline.
Super - 220
This package has also been designed to meet automotive qualification standard
Q101.
Absolute Maximum Ratings
Parameter
Max.
179
126
720
270
1.8
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
±16
610
71
Single Pulse Avalanche Energyꢀ
Avalanche Currentꢀ
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
27
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
°C
300 (1.6mm from case )
20
N
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
0.5
Max.
Units
°C/W
1
RθJC
0.55
–––
58
RθCS
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
RθJA
–––
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05/20/02
IRLBA3803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mAꢀ
––– ––– 0.005
––– ––– 0.009
VGS = 10V, ID = 71A
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS = 4.5V, ID = 59A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 71Aꢀ
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS(th)
gfs
Gate Threshold Voltage
1.0
55
–––
V
S
Forward Transconductance
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 140
––– ––– 41
––– ––– 78
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
Qgs
Qgd
td(on)
tr
ID = 71A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13 ꢀ
–––
14 –––
VDD = 15V
––– 230 –––
ID = 71A
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
29 –––
35 –––
RG = 1.3Ω
RD = 0.20Ω, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
2.0
–––
nH
G
from package
––– 5.0 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 5000 –––
––– 1800 –––
––– 880 –––
Output Capacitance
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5ꢀ
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– –––
––– –––
179
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
720
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 120 180
––– 450 680
V
TJ = 25°C, IS = 71A, VGS = 0V
ns
TJ = 25°C, IF = 71A
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀUses IRL3803 data and test conditions.
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 71A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRLBA3803
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
TOP
TOP
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 175 C
2.7V
°
°
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
I
= 120A
D
°
T = 25 C
J
°
T = 175 C
J
V
= 25V
20µs PULSE WIDTH
DS
V
= 10V
G S
A
2.0
4.0
6.0
8.0 10.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLBA3803
10000
15
12
9
V
C
C
C
= 0V ,
f = 1MHz
I
= 71A
D
G S
iss
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
V
V
= 24V
= 15V
DS
DS
rss
oss
C
C
iss
gd
8000
6000
4000
2000
0
oss
6
C
rss
3
FOR TE ST CIRCUIT
SE E FIG URE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10000
1000
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
100
10
1
10us
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
J
10ms
°
T = 175 C
V
= 0 V
GS
2.0
Single Pulse
10
0.4
0.8
1.2
1.6
2.4
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRLBA3803
200
160
120
80
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
-
VDD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
40
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLBA3803
1500
1200
900
600
300
0
I
D
TOP
29A
50A
71A
1 5V
BO TTO M
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 15V
50
DD
A
25
75
100
125
150
175
V
(BR)DSS
Starting T , Junction Tem perature (°C)
t
J
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
4.5
V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLBA3803
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRLBA3803
Super-220 Package Outline
Super-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02
8
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