IRLHM620TRPBF [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | IRLHM620TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总8页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97565A
IRLHM620PbF
HEXFET® Power MOSFET
VDS
20
12
V
V
VGS max
±
5
6
7
8
D
D
D
D
4
3
2
1
G
S
S
S
RDS(on) max
(@VGS = 4.5V)
2.5
m
Ω
Ω
RDS(on) max
(@VGS = 2.5V)
3.5
52
m
3.3mm x 3.3mm PQFN
Qg (typical)
nC
A
ID
40
(@Tc(Bottom) = 25°C)
Applications
• Battery Operated DC Motor Inverter MOSFET
• Secondary Side Synchronous Rectification MOSFET
FeaturesandBenefits
Features
Benefits
Low RDSon (<2.5mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRLHM620TRPBF
IRLHM620TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
20
Units
VDS
V
V
Gate-to-Source Voltage
±12
26
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
I
I
I
I
I
@ TA = 25°C
D
D
D
D
@ TA = 70°C
21
A
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
40
40
160
2.7
37
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
0.022
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through ꢀ are on page 8
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1
11/4/2010
IRLHM620PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS
∆Β
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
5.4
2.0
2.7
0.8
-4.3
–––
–––
–––
–––
–––
52
–––
V
∆
V
DSS/ TJ
–––
–––
–––
0.5
RDS(on)
2.5
3.5
1.1
VGS = 4.5V, ID = 20A
GS = 2.5V, ID = 20A
Ω
m
V
VGS(th)
Gate Threshold Voltage
V
VDS = VGS, ID = 50µA
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
58
––– mV/°C
IDSS
1.0
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
VGS = -12V
gfs
Qg
–––
78
S
nC
Ω
VDS = 10V, ID = 20A
VDS = 10V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
RG
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
6.3
25
–––
–––
VGS = 4.5V
ID = 20A (See Fig.17 & 18)
2.6
7.5
25
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 10V, VGS = 4.5V
ID = 20A
–––
–––
–––
–––
–––
–––
ns
pF
Ω
Turn-Off Delay Time
Fall Time
57
RG=1.0
See Fig.15
GS = 0V
37
Ciss
Coss
Crss
Input Capacitance
3620
900
620
V
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
120
20
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
40
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
160
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 20A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
41
1.2
62
V
T = 25°C, I = 20A, VDD = 10V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 220A/µs
68
100
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
Units
Junction-to-Case
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
3.4
37
46
31
°C/W
Junction-to-Ambient
Junction-to-Ambient
Rθ
JA
RθJA (<10s)
2
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IRLHM620PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 150°C
≤
TOP
TOP
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
BOTTOM
BOTTOM
1
1.3V
1.3V
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
I
= 20A
DS
D
V
= 4.5V
≤
60µs PULSE WIDTH
GS
100
10
T = 150°C
J
T = 25°C
J
1.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
V
V
V
= 16V
= 10V
= 4.0V
rss
oss
gd
= C + C
DS
DS
DS
ds
gd
10000
1000
100
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLHM620PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
100µsec
1msec
T
= 150°C
J
10msec
DC
T
= 25°C
J
10
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
1
0
1
10
100
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
90
Limited By Package
80
70
60
50
40
30
20
10
0
I
I
I
I
= 50µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLHM620PbF
7
6
5
4
3
2
1
500
400
300
200
100
0
I
I
= 20A
D
D
TOP
5.8A
12A
BOTTOM 20A
T
= 125°C
J
T
= 25°C
8
J
0
2
4
6
10
12
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRLHM620PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRLHM620PbF
PQFN 3.3x3.3 Outline Package Details
8
7
6
5
1
2
3
4
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3x3.3 Outline Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
ASSEMBLY
MARKING CODE
SITE CODE
(Per Marking Spec)
(Per SCOP 200-002)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
PIN 1
IDENTIFIER
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLHM620PbF
PQFN 3.3x3.3 Outline Tape and Reel
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts.
DIMENSIONS
METRIC
IMPERIAL
MIN MAX
REEL DIMENSIONS
CODE
MIN
MAX
8.10
4.10
12.30
5.55
3.70
3.70
0.35
1.30
STANDARD OPTION (QTY 4000)
A
B
C
D
E
F
7.90
3.90
11.70
5.45
3.50
3.50
0.25
1.10
0.311
0.154
0.461
0.215
0.138
0.138
0.010
0.043
0.319
0.161
0.484
0.219
0.146
0.146
0.014
0.051
IMPERIAL
MIN MAX
330.25 12.835 13.002
METRIC
MAX
CODE
MIN
326.0
20.2
12.8
1.5
A
B
C
D
E
F
20.45
13.50
2.5
0.795
0.504
0.059
0.805
0.531
0.098
102.0 REF
4.016 REF
G
H
17.8
12.4
18.3
12.9
0.701
0.488
0.720
0.508
G
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 3.3mm x 3.3mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.59mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production
test capability.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/2010
8
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