IRLHM630TRPBF [INFINEON]
Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8;
| 型号： | IRLHM630TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLHM630PbF
HEXFET® Power MOSFET
VDS
30
V
V
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
±
12
VGS max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
3.5
mΩ
4.5
41
mΩ
nC
A
(@VGS = 2.5V)
Qg (typical)
PQFN 3.3mm x 3.3mm
ID
40
(@Tc(Bottom) = 25°C)
Applications
• Battery Operated DC Motor Inverter MOSFET
• Secondary Side Synchronous Rectification MOSFET
FeaturesandBenefits
Features
Benefits
Low RDSon (<3.5mΩ)
Lower Conduction Losses
Low Thermal Resistance to PCB (<3.4°C/W)
Enable better thermal dissipation
Low Profile (<1.0mm)
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Standard Pack
Form
Orderable part number
Package Type
Note
Quantity
4000
IRLHM630TRPBF
IRLHM630TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Tape and Reel
Tape and Reel
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
±12
21
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
I
I
I
I
I
@ TA = 25°C
D
D
D
D
@ TA = 70°C
17
40
A
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
40
160
2.7
37
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
0.022
W/°C
°C
T
T
Operating Junction and
Storage Temperature Range
-55 to + 150
J
STG
Notes through ꢀ are on page 9
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IRLHM630PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
2.1
2.2
2.5
3.5
0.8
-3.8
–––
–––
–––
–––
–––
41
–––
V
VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
–––
0.5
––– mV/°C Reference to 25°C, ID = 1mA
3.2
3.5
4.5
1.1
V
V
GS = 10V, ID = 20A
GS = 4.5V, ID = 20A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS = 2.5V, ID = 20A
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
V
VDS = VGS, ID = 50μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
––– mV/°C
1.0
V
V
V
V
V
DS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 12V
μA
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
GS = -12V
gfs
Qg
–––
62
S
DS = 10V, ID = 20A
VDS = 14V
nC
Qgs
Qgd
RG
Gate-to-Source Charge
Gate-to-Drain Charge
4.6
14
–––
–––
VGS = 4.5V
ID = 20A (See Fig.17 & 18)
Gate Resistance
2.6
Ω
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
9.1
32
VDD = 15V, VGS = 4.5V
ID = 20A
ns
Turn-Off Delay Time
Fall Time
65
RG=1.0Ω
See Fig.15
VGS = 0V
43
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3170
330
250
pF
V
DS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
80
20
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
40
(Body Diode)
showing the
G
A
ISM
Pulsed Source Current
integral reverse
–––
–––
160
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
20
1.2
30
45
V
T = 25°C, I = 20A, V
= 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 20A, VDD = 10V
J F
Qrr
30
nC di/dt = 400A/μs
Thermal Resistance
Parameter
Typ.
Max.
3.4
37
46
31
Units
Junction-to-Case
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
–––
–––
–––
–––
°C/W
Junction-to-Ambient
Junction-to-Ambient
RθJA (<10s)
2
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IRLHM630PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
BOTTOM
BOTTOM
1.3V
1
1.3V
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
≤
Tj = 150°C
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 4.5V
GS
100
T
= 150°C
J
T
= 25°C
J
10
V
= 15V
DS
≤60μs PULSE WIDTH
1.0
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
V
V
V
= 24V
= 15V
= 6.0V
D
C
C
C
+ C , C
SHORTED
ds
DS
DS
DS
iss
gs
gd
12
10
8
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
6
C
C
oss
rss
4
2
0
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRLHM630PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100μsec
1msec
T = 25°C
J
DC
1
Tc = 25°C
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
80
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
LIMITED BY PACKAGE
60
40
20
0
I
I
I
I
= 50μA
D
D
D
D
= 250μA
= 1.0mA
= 10mA
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
C
T , Temperature ( °C )
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLHM630PbF
12
11
10
9
350
300
250
200
150
100
50
I
I
= 20A
D
D
TOP
5.8A
11A
BOTTOM 20A
8
7
6
T
= 125°C
J
5
4
3
T
= 25°C
8
J
2
0
0
2
4
6
10
12
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRLHM630PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRLHM630PbF
PQFN 3.3x3.3 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3x3.3 Outline Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
MARKING CODE
::::
!;99!
:::::
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PIN 1
IDENTIFIER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLHM630PbF
PQFN 3.3x3.3 Outline Tape and Reel
Note:
1. Dimension measured on the bottomof the cavity.
2. Pitch tolerance over any 10 pitches = ±0.008 [0.2]
3. ESD Requirement: 0±200volts
4. Surface Resistivity = 10 to 10 ohms per square inch
5. Roll should contain splice-free material
6.
Engrave RESY symbol every 100 sprockets
(about 15.75 [400]
camber
( conformsupplier specification)
PS
The camber shall not exceed in 1mm/250
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLHM630PbF
Qualification information†
Industrial††
(per JEDEC JESD47F††† guidelines )
Qualification level
MSL1
Moisture Sensitivity Level
RoHS compliant
PQFN 3.3mm x 3.3mm
(per JEDEC J-STD-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.40mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R
is measured at TJ of approximately 90°C.
θ
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production
test capability.
Revision History
Date
Comments
Added Rdson 10V at 20A, typical="2.2m " and max="3.2m " on page 2.
•
•
•
•
•
Ω
Ω ,
Ω
Ω ,
Corrected Rdson 4.5V at 20A, from typical="2.8m " to typical="2.5m " on page 2.
Updated package 3D drawing, package outline and tape and reel, on page 1,7 and 8.
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
Updated data sheet based on corporate template.
5/29/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
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相关型号：
IRLHS2242
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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