IRLIZ44NPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRLIZ44NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95456
IRLIZ44NPbF
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l IsolatedPackage
D
VDSS = 55V
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
RDS(on) = 0.022Ω
G
l Lead-Free
ID = 30A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
22
A
160
PD @TC = 25°C
Power Dissipation
45
0.3
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
Single Pulse Avalanche Energy
Avalanche Current
210
mJ
25
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4.5
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
3.3
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
65
6/23/04
IRLIZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.070 V/°C Reference to 25°C, ID = 1mA
0.022
0.025
0.035
VGS = 10V, ID = 17A
GS = 5.0V, ID = 17A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS = 4.0V, ID = 14A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS(th)
gfs
Gate Threshold Voltage
1.0
21
2.0
V
S
Forward Transconductance
25
250
100
-100
48
8.6
25
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
11
84
26
15
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.4Ω, VGS = 5.0V
RD = 1.1Ω, See Fig. 10
Between lead,
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.5
7.5
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
C
Input Capacitance
1700
400
150
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
= 1.0MHz, See Fig. 5
= 1.0MHz
12
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
30
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
160
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.3
80 120
210 320
V
TJ = 25°C, IS = 17A, VGS = 0V
ns
TJ = 25°C, IF = 25A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
ꢀ t=60s, =60Hz
Uses IRLZ44N data and test conditions
,
IRLIZ44NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
J
T
= 175°C
J
1
A
1
0.1
A
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
I
= 41A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ= 25°C
100
10
1
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
V
= 10V
GS
A
A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLIZ44NPbF
15
12
9
2800
I
= 25A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
ds
DS
DS
= C
gd
2400
2000
1600
1200
800
400
0
= C + C
ds
gd
C
iss
C
oss
6
3
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
10
20
30
40
50
60
70
1
10
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
V
= 0V
Single Pulse
GS
A
10
1
A
0.4
0.8
1.2
1.6
2.0
2.4
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRLIZ44NPbF
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.02
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLIZ44NPbF
500
400
300
200
100
0
L
I
D
V
DS
TOP
10A
17A
BOTTOM 25A
D.U.T.
R
+
-
G
V
DD
I
5.0 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
175
V
(BR)DSS
25
75
100
125
150
Starting T , Junction Temperature (°C)
t
J
p
V
Fig 12c. Maximum Avalanche Energy
DD
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLIZ44NPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRLIZ44NPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G
W IT H AS S E MB L Y
P AR T N U MB E R
DAT E CODE
L OT CODE 3432
IN T E R N AT IONAL
R E CT IF IE R
L OGO
IR F I8 40G
924 K
AS S E MB L E D ON W W 24 1999
IN T H E AS S E MB L Y L IN E "K "
34
32
Note: "P" in assembly line
position indicates "Lead-Free"
YE AR
WE E K 24
L IN E
9 = 1999
AS S E MB L Y
L OT CODE
K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
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