IRLML2246PBF-1_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;型号: | IRLML2246PBF-1_15 |
厂家: | Infineon |
描述: | Compatible with Existing Surface Mount Techniques |
文件: | 总9页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRLML2246PbF-1
HEXFET® Power MOSFET
VDS
-20
135
2.9
V
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
G
S
1
2
m
Ω
3
D
nC
A
ID
-2.6
TM
(@TA = 25°C)
Micro3 (SOT-23)
IRLML2246TRPbF-1
Features
Benefits
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Base Part Number
Package Type
Micro3 (SOT-23)
Orderable Part Number
Form
Quantity
IRLML2246TRPbF-1
Tape and Reel
3000
IRLML2246TRPbF-1
™
Absolute Maximum Ratings
Symbol
Parameter
Max.
-20
Units
V
VDS
Drain-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-2.6
-2.1
-11
A
PD @TA = 25°C
PD @TA = 70°C
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
0.80
0.01
± 12
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
RθJA
Junction-to-Ambient
°C/W
RθJA
–––
99
Junction-to-Ambient (t<10s)
1
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IRLML2246PbF-1
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
3.4
–––
9.5
90
–––
V
VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
––– mV/°C Reference to 25°C, ID = -1mA
GS = -4.5V, ID = -2.6A
135
236
-1.1
-1.0
-150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
m
157
–––
–––
–––
–––
–––
16
VGS = -2.5V, ID = -2.1A
VGS(th)
IDSS
V
VDS = VGS, ID = -10μA
V
V
DS = -16V, VGS = 0V
Drain-to-Source Leakage Current
μA
DS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
VGS = 12V
GS = -12V
nA
V
RG
Ω
gfs
Qg
–––
2.9
0.52
1.2
5.3
7.7
26
S
VDS = -10V, ID = -2.6A
ID = -2.6A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS =-10V
nC
ns
VGS = -4.5V
VDD =-10V
Rise Time
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
RG = 6.8Ω
Fall Time
16
VGS = -4.5V
Ciss
Coss
Crss
Input Capacitance
220
70
V
V
GS = 0V
Output Capacitance
DS = -16V
pF
Reverse Transfer Capacitance
48
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
S
–––
–––
–––
-1.3
(Body Diode)
showing the
integral reverse
A
G
ISM
Pulsed Source Current
–––
-11
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
17
-1.2
26
V
TJ = 25°C, IS = -2.6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, VR = -15V, IF=-2.6A
di/dt = 100A/μs
nC
Qrr
6.2
9.3
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board.
Refer to application note #AN-994.
2
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IRLML2246PbF-1
100
10
1
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
BOTTOM
BOTTOM
-1.5V
-1.5V
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
≤
≤
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1.6
I
= -2.6A
D
V
= -4.5V
GS
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
T
= 25°C
1
J
V
= -15V
DS
≤
60μs PULSE WIDTH
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
3
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October 28, 2014
IRLML2246PbF-1
10000
1000
100
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
I
= -2.6A
iss
gs
gd
ds
D
= C
rss
oss
gd
= C + C
V
= -16V
= -10V
= -4.0V
ds
gd
DS
V
V
DS
DS
C
iss
C
6.0
oss
C
rss
4.0
2.0
0.0
10
0
1
2
3
4
5
6
7
8
1
10
, Drain-to-Source Voltage (V)
100
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10
1
1msec
100μsec
T
= 150°C
J
10msec
T
= 25°C
J
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.10
1.0
10
100
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLML2246PbF-1
RD
VDS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
D.U.T.
RG
-
VDD
+
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
Fig 9. Maximum Drain Current vs.
90%
Ambient Temperature
V
DS
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
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October 28, 2014
IRLML2246PbF-1
300
250
200
150
100
50
1200
1000
800
600
400
200
0
I
= -2.6A
D
Vgs = -2.5V
Vgs = -4.5V
T
= 125°C
J
T
2
= 25°C
J
1
3
4
5
6
7
8
9
10 11 12
0
2
4
6
8
10 12 14 16
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs.
Fig 12. Typical On-Resistance vs.
Drain Current
Gate Voltage
Id
Vds
Vgs
L
VCC
DUT
0
20K
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML2246PbF-1
1000
800
600
400
200
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
I
= -10μA
D
D
= -250μA
-75 -50 -25
0
25 50 75 100 125 150
1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T
, Temperature ( °C )
Time (sec)
J
Fig 16. Typical Power vs. Time
Fig 15. Typical Threshold Voltage vs.
Junction Temperature
7
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October 28, 2014
IRLML2246PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
DIMENSIONS
M
B
6
MILLIMETERS
INCHES
D
5
O
L
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
MIN
MAX
.044
6
5
3
.036
.0004
.035
A
A1
A2
b
E1
B
E
ccc
C
B
A
1
2
.0039
.040
e
e1
.0119
.0032
.111
.0196
.0078
.119
c
L2
4
H
D
E
A2
A
L1
.083
.103
3X
b
bbb
A1
aaa
C
3 SU RF
C
B A
E1
e
.048
.055
0
7
3XL
0.95 BSC
1.90 BSC
0.40 0.60
.0375 BSC
.075 BSC
.0158 .0236
e1
L
RECOMMENDED FOOTPRINT
L EAD AS SIGNME NT
1. GATE
2. SOURCE
3. DRAIN
0.972
[.038]
3X
L1
L2
0
0.25 BSC
0.54 REF
.0118 BSC
.021 REF
2.742
[.1079]
0°
8°
0°
8°
NOT ES
1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994.
2. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ]
3. CONTROLLING DIMENSION: MILLIMETER.
0.802
[.031]
aaa
0.10
0.20
0.15
.004
.008
.006
3X
0.95
[.0375]
bbb
ccc
1.90
[.075]
4
5
6
DATUM PLANE H IS LOCAT ED AT THE MOLD PARTING LINE.
DATUM A AND B TO BE DET ERMINED AT DATUM PLANE H.
DIMENS IONS D AND E1 ARE MEASURED AT DATUM PLANE H.
DIMENSIONS DOES NOT INCLUDE MOLD PROTRUS IONS OR
INT ER LEAD F LAS H. MOLD PROT RUS ION OR INT E RLE AD F L AS H
SHALL NOT EXCEED 0.25 MM [.010 INCH] PER SIDE.
7
DIMENS ION L IS THE LEAD LENGT H FOR S OLDERING TO AS UBST RATE.
8. OUT L INE CONF ORMS T O JEDE C OUT LINE T O-236AB.
Micro3 (SOT-23 / TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
DATE CODE
PART NUMBER
LEAD FREE
YEAR
Y
WE EK
W
2011
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2012
2013
2014
2015
2016
2017
2018
2019
2020
INDUSTRIAL VERSION
Cu WIR E
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A= IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G= IRLML2502
H = IRLML5203
S = IRLML6244
T = IRLML6246
U = IRLML6344
V= IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
WORK
YEAR
Y
WE EK
W
I
=
IRLML0030
2011
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
2012
2013
2014
2015
2016
2017
2018
2019
2020
J = IRLML2030
K = IRLML0100
L = IRLML0060
M= IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
F
G
H
J
K
50
51
52
X
Y
Z
Note: A line above the work week
(as shown here) indicates Lead- Free.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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October 28, 2014
IRLML2246PbF-1
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
™
Micro3 (SOT-23)
Moisture Sensitivity Level
RoHS compliant
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
•
10/28/2014
Updated partmarking to reflect Industrial partmarking on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
9
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October 28, 2014
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