IRLML2402TR [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | IRLML2402TR |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总8页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91257D
IRLML2402
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
D
VDSS = 20V
l Low Profile (<1&1mm)
l Available in Tape and Reel
l Fast Switching
G
RDS(on) = 0ꢀ25Ω
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area" This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications"
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint" This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium" The low
profile (<1"1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards"
Micro3
Absolute Maximum Ratings
Parameter
Maxꢀ
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4ꢀ5V
Continuous Drain Current, VGS @ 4ꢀ5V
Pulsed Drain Current
1ꢀ2
0ꢀ95
7ꢀ4
A
PD@TA = 25°C
Power Dissipation
540
4ꢀ3
mW
mW/°C
V
Linear Derating Factor
VGS
Gate-to-Source Voltage
± 12
5ꢀ0
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typꢀ
Maxꢀ
230
Units
°C/W
RθJA
01/15/03
IRLML2402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
20
0ꢀ024 V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Tempꢀ Coefficient
0ꢀ25
0ꢀ35
0ꢀ70
1ꢀ3
1ꢀ0
25
-100
100
2ꢀ6 3ꢀ9
0ꢀ41 0ꢀ62
1ꢀ1 1ꢀ7
2ꢀ5
9ꢀ5
9ꢀ7
4ꢀ8
110
51
25
VGS = 4ꢀ5V, ID = 0ꢀ93A
VGS = 2ꢀ7V, ID = 0ꢀ47A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 0ꢀ47A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
ID = 0ꢀ93A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 4ꢀ5V, See Figꢀ 6 and 9
VDD = 10V
ID = 0ꢀ93A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6ꢀ2Ω
RD = 11Ω, See Figꢀ 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
= 1ꢀ0MHz, See Figꢀ 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Minꢀ Typꢀ Maxꢀ Units
Conditions
MOSFET symbol
D
IS
0ꢀ54
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
7ꢀ4
S
p-n junction diodeꢀ
TJ = 25°C, IS = 0ꢀ93A, VGS = 0V
TJ = 25°C, IF = 0ꢀ93A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1ꢀ2
V
25
16
38
24
ns
nC
Qrr
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%ꢀ
maxꢀ junction temperatureꢀ ( See figꢀ 11 )
ISD ≤ 0ꢀ93A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 5secꢀ
IRLML2402
100
10
100
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
TOP
TOP
BOTTOM 1.5V
BOTTOM 1.5V
1
1
1.5V
0.1
0.01
0.1
0.01
1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
10
A
0.1
1
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2ꢀ Typical Output Characteristics
Fig 1ꢀ Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= 0.93A
D
TJ = 25°C
TJ= 150°C
1
0.1
VDS = 10V
20µs PULSE WIDTH
V
= 4.5V
GS
0.01
A
4.0A
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4ꢀ Normalized On-Resistance
Fig 3ꢀ Typical Transfer Characteristics
Vsꢀ Temperature
IRLML2402
10
8
200
I
V
= 0.93A
= 16V
V
C
C
C
= 0V,
f = 1MHz
D
DS
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
= C + C
ds
gd
160
120
80
40
0
C
C
iss
6
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
0.0
A
A
1.0
2.0
3.0
4.0
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5ꢀ Typical Capacitance Vsꢀ
Fig 6ꢀ Typical Gate Charge Vsꢀ
Drain-to-Source Voltage
Gate-to-Source Voltage
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
1
T = 25°C
J
100µs
1ms
0.1
T
T
= 25°C
= 150°C
10ms
A
J
V
= 0V
Single Pulse
GS
A
0.01
0.1
A
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8ꢀ Maximum Safe Operating Area
Fig 7ꢀ Typical Source-Drain Diode
Forward Voltage
IRLML2402
RD
VDS
Q
G
VGS
4ꢀ5V
DꢀUꢀTꢀ
Q
Q
GD
GS
RG
+ VDD
-
V
G
4ꢀ5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9aꢀ Basic Gate Charge Waveform
Fig 10aꢀ Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9bꢀ Gate Charge Test Circuit
Fig 10bꢀ Switching Time Waveforms
1000
D = 0.50
100
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11ꢀ Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRLML2402
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12ꢀ For N-Channel HEXFETS
IRLML2402
Package Outline
Micro3 (SOT-23 / TO-236AB)
Dimensions are shown in millimeters (inches)
INCHES
MIN MAX
.032
MILLIMETERS
D
LEAD ASSIGNMENTS
DIM
A
3
- B -
MIN
0.82
0.02
MAX
1.11
0.10
1 - GATE
2 - SOURCE
3 - DRAIN
.044
.004
.021
.006
.120
A1 .001
B
C
D
e
.015
.004
.105
0.38
0.10
2.67
0.54
0.15
3.05
3
3
H
E
- A -
0.20 ( .008 )
M
A
M
1
2
.0750 BASIC
.0375 BASIC
1.90 BASIC
0.95 BASIC
e1
E
H
L
.047
.083
.055
.098
1.20
2.10
0.13
0°
1.40
e
2.50
0.25
8°
e1
.005 .010
0° 8°
θ
θ
A
MINIMUM RECOMMENDED FOOTPRINT
- C -
B
0.80 ( .031 )
3X
0.008 (.003)
A1
A S B S
C
L
3X
0.10 (.004)
0.90
( .035 )
3X
3X
3X
M
C
2.00
( .079 )
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
0.95 ( .037 )
2X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
3
Part Marking Information
Micro3 (SOT-23 / TO-236AB)
IRLML2402
Tape & Reel Information
Micro3 (SOT-23 / TO-236AB)
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/03
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