IRLML2402PBF-1 [INFINEON]

Compatible with Existing Surface Mount Techniques;


型号：	IRLML2402PBF-1
厂家：	Infineon
描述：	Compatible with Existing Surface Mount Techniques
文件：	总8页 (文件大小：243K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRLML2402PbF-1

HEXFET^®Power MOSFET

V_DS

0.25

2.6

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

1.2

(@T_A= 25°C)

Micro3™(SOT-23)

Features

Benefits

Industry-standard pinout SOT-23 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Base Part Number

Package Type

Micro3 (SOT-23)

Orderable Part Number

IRLML2402TRPbF-1

Form

Quantity

IRLML2402TRPbF-1

Tape and Reel

3000

™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

1.2

0.95

7.4

P_D@T_A= 25°C

Power Dissipation

540

mW/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

230

Units

°C/W

R_θJA

October 28, 2014

IRLML2402PbF-1

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

0.024 V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient

0.25

0.35

0.70

1.3

1.0

-100

100

2.6 3.9

0.41 0.62

1.1 1.7

2.5

9.5

9.7

4.8

110

V_GS= 4.5V, I_D= 0.93A

V_GS= 2.7V, I_D= 0.47A

V_DS= V_GS, I_D= 250µA

V_DS= 10V, I_D= 0.47A

V_DS= 16V, V_GS= 0V

V_DS= 16V, V_GS= 0V, T_J= 125°C

V_GS= -12V

R_DS(on)

Static Drain-to-Source On-Resistance

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 12V

Q_g

I_D= 0.93A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 16V

V_GS= 4.5V, See Fig. 6 and 9

V_DD= 10V

I_D= 0.93A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.2Ω

R_D= 11Ω, See Fig. 10

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= 15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

0.54

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

7.4

p-n junction diode.

T_J= 25°C, I_S= 0.93A, V_GS= 0V

T_J= 25°C, I_F= 0.93A

di/dt = 100A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

1.2

Q_rr

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

I_SD≤ 0.93A, di/dt ≤ 90A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 5sec.

October 28, 2014

IRLML2402PbF-1

100

VGS

7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

VGS

TOP

7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

1.5V

0.1

0.01

1.5V

20μs PULSE WIDTH

= 25°C

= 150°C

0.01

0.1

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

= 0.93A

T_J= 25°C

T_J= 150°C

0.1

V_DS= 10V

20μs PULSE WIDTH

= 4.5V

0.01

_4.0A

1.5

2.0

2.5

3.0

3.5

-60 -40 -20

20 40 60 80 100 120 140 160

V_GS, Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

October 28, 2014

IRLML2402PbF-1

200

160

120

= 0.93A

= 0V,

f = 1MHz

iss

rss

oss

= 16V

= C + C

SHORTED

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 9

0.0

1.0

2.0

3.0

4.0

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150°C

T = 25°C

100μs

1ms

0.1

= 25°C

= 150°C

10ms

= 0V

Single Pulse

0.01

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

October 28, 2014

IRLML2402PbF-1

R_D

V_DS

V_GS

4.5V

D.U.T.

R_G

⁺V_DD

4.5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Charge

Fig 9a. Basic Gate Charge Waveform

Fig 10a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

50KΩ

90%

.2μF

12V

.3μF

D.U.T.

10%

3mA

d(on)

d(off)

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

1000

D = 0.50

100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJA A

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

October 28, 2014

IRLML2402PbF-1

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 12. For N-Channel HEXFETS

October 28, 2014

IRLML2402PbF-1

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

DIMENSIONS

MILLIMETERS INCHES

MIN MAX

MIN

0.89

0.01

0.88

0.30

0.08

2.80

2.10

1.20

MAX

1.12

0.10

1.02

0.50

0.20

3.04

2.64

1.40

.036

.0004

.035

.044

.0039

.040

.0119

.0032

.111

.0196

.0078

.119

ccc

C B A

.083

.048

.103

.055

0.95 BSC

1.90 BSC

0.40 0.60

0.25 BSC

0° 8°

.0375 BSC

.075 BSC

.0158 .0236

.0118 BSC

0° 8°

aaa

0.10

0.20

0.15

.004

.008

.006

bbb

ccc

3X b

bbb

aaa

A B

3 SURF

3X L

RE COMME NDE D FOOT PRINT

NOTES

1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.

2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.

3. CONTROLLING DIMENSION: MILLIMETER.

0.972

[.038]

2.742

[.1079]

DATUMPLANE H IS LOCATED AT THE MOLD PARTINGLINE.

DAT U M A AND B T O B E DE T E RMINE D AT DAT UM PLANE H.

DIME NS IONS D AND E 1 AR E ME AS UR ED AT DAT UM PLANE H.

DIMENSION L IS THE LEAD LENGTH FOR SOLDERINGTO ASUBSTRATE.

8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.

0.802

[.031]

0.95

[.0375]

1.90

[.075]

Micro3 (SOT-23 / TO-236AB) Part Marking Information

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

DATE CODE

PART NUMBER

WORK

WE EK

LEAD FREE

YEAR

2011

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

2012

2013

2014

2015

2016

2017

2018

2019

2020

INDUSTRIAL VERSION

Cu WIR E

HALOGEN FREE

LOT CODE

X = PART NUMBER CODE REFERENCE:

A= IRLML2402

B = IRLML2803

C = IRLML6302

D = IRLML5103

E = IRLML6402

F = IRLML6401

G= IRLML2502

H = IRLML5203

S = IRLML6244

T = IRLML6246

U = IRLML6344

V= IRLML6346

W = IRFML8244

X = IRLML2244

Y = IRLML2246

Z = IRFML9244

W = (27-52) IF PRECEDED BY A LETTER

WORK

YEAR

WE EK

= IRLML0030

2011

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

2012

2013

2014

2015

2016

2017

2018

2019

2020

J = IRLML2030

K = IRLML0100

L = IRLML0060

M= IRLML0040

N = IRLML2060

P = IRLML9301

R = IRLML9303

Note: A line above the work week

(as shown here) indicates Lead- Free.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

October 28, 2014

IRLML2402PbF-1

Micro3™ Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

3.45 ( .136 )

8.3 ( .326 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

™

Micro3 (SOT-23)

Moisture Sensitivity Level

RoHS compliant

(per JEDEC J-STD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Revision History

Date

Comment

•

10/28/2014

Updated partmarking to reflect Industrial partmarking on page 7.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

October 28, 2014

IRLML2402PBF-1 [INFINEON]

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